ATE385037T1 - Niob-sinter für kondensator und verfahren zu seiner herstellung - Google Patents

Niob-sinter für kondensator und verfahren zu seiner herstellung

Info

Publication number: ATE385037T1
Authority: AT; Austria
Prior art keywords: niobium; sintered body; capacitor; good; product
Prior art date: 1998-08-05

Application number

AT99935067T

Other languages

English (en)

Inventor

Kazumi Naito

Atsushi Shimojima

Original Assignee

Showa Denko Kk

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-08-05

Filing date

1999-08-05

Publication date

2008-02-15

1999-08-05 Application filed by Showa Denko Kk filed Critical Showa Denko Kk

2008-02-15 Application granted granted Critical

2008-02-15 Publication of ATE385037T1 publication Critical patent/ATE385037T1/de

Links

239000003990 capacitor Substances 0.000 title abstract 4
238000004519 manufacturing process Methods 0.000 title 1
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 3
CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 abstract 1
VDZMENNHPJNJPP-UHFFFAOYSA-N boranylidyneniobium Chemical compound [Nb]#B VDZMENNHPJNJPP-UHFFFAOYSA-N 0.000 abstract 1
238000005868 electrolysis reaction Methods 0.000 abstract 1
UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 abstract 1
229910052758 niobium Inorganic materials 0.000 abstract 1
239000010955 niobium Substances 0.000 abstract 1
150000002822 niobium compounds Chemical group 0.000 abstract 1
238000005245 sintering Methods 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Chemical & Material Sciences (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Powder Metallurgy (AREA)
Compositions Of Oxide Ceramics (AREA)
Manufacture And Refinement Of Metals (AREA)
Inorganic Compounds Of Heavy Metals (AREA)
Ceramic Products (AREA)

AT99935067T 1998-08-05 1999-08-05 Niob-sinter für kondensator und verfahren zu seiner herstellung ATE385037T1 (de)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date
JP22169598		1998-08-05
JP22328098		1998-08-06
US10898698P	1998-11-18	1998-11-18

Publications (1)

Publication Number	Publication Date
ATE385037T1 true ATE385037T1 (de)	2008-02-15

Family

ID=27330571

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT99935067T ATE385037T1 (de)	1998-08-05	1999-08-05	Niob-sinter für kondensator und verfahren zu seiner herstellung

Country Status (10)

Country	Link
US (2)	US6521013B1 (de)
EP (1)	EP1137021B1 (de)
JP (2)	JP4873585B2 (de)
KR (1)	KR100663071B1 (de)
AT (1)	ATE385037T1 (de)
AU (1)	AU5065099A (de)
DE (1)	DE69938056T2 (de)
HK (1)	HK1041976B (de)
TW (1)	TW430833B (de)
WO (1)	WO2000008662A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6051044A (en)	1998-05-04	2000-04-18	Cabot Corporation	Nitrided niobium powders and niobium electrolytic capacitors
ATE385037T1 (de) *	1998-08-05	2008-02-15	Showa Denko Kk	Niob-sinter für kondensator und verfahren zu seiner herstellung
US6375704B1 (en)	1999-05-12	2002-04-23	Cabot Corporation	High capacitance niobium powders and electrolytic capacitor anodes
CN100491022C (zh)	2000-03-01	2009-05-27	卡伯特公司	氮化的电子管金属及其制造方法
JP4697832B2 (ja) *	2000-04-21	2011-06-08	昭和電工株式会社	ニオブ焼結体、その製造方法及びその焼結体を用いたコンデンサ
AU2001248805A1 (en) *	2000-04-21	2001-11-07	Showa Denko K K	Niobium sintered body, production method therefor, and capacitor using the same
JP4707164B2 (ja) *	2000-04-28	2011-06-22	昭和電工株式会社	コンデンサ用ニオブ粉、それを用いた焼結体及びそれを用いたコンデンサ
JP3718412B2 (ja) *	2000-06-01	2005-11-24	キャボットスーパーメタル株式会社	ニオブまたはタンタル粉末およびその製造方法
JP2002134368A (ja) *	2000-10-26	2002-05-10	Showa Denko Kk	コンデンサ用粉体、焼結体及びその焼結体を用いたコンデンサ
JP2002217070A (ja) *	2001-01-22	2002-08-02	Kawatetsu Mining Co Ltd	ニオブ粉末及び固体電解コンデンサ用アノード
US7274552B2 (en)	2001-03-16	2007-09-25	Showa Denko K.K.	Niobium for capacitor and capacitor using sintered body of the niobium
US7110244B2 (en) *	2001-04-12	2006-09-19	Showa Denko K.K.	Production process for niobium capacitor
CN101510468B (zh) *	2001-04-12	2012-01-18	昭和电工株式会社	铌电容器的制备方法
KR20040062674A (ko) *	2001-12-10	2004-07-07	쇼와 덴코 가부시키가이샤	니오브 합금, 그 소결체 및 이것을 사용한 콘덴서
KR100434215B1 (ko) *	2001-12-27	2004-06-04	파츠닉(주)	니오븀 전해 캐패시터의 제조 방법
JP2004143477A (ja) *	2002-10-22	2004-05-20	Cabot Supermetal Kk	ニオブ粉末およびその製造方法、並びにそれを用いた固体電解コンデンサ
JP4566593B2 (ja) *	2003-04-14	2010-10-20	昭和電工株式会社	焼結体電極及びその焼結体電極を用いた固体電解コンデンサ
TWI382264B (zh) *	2004-07-27	2013-01-11	Samsung Display Co Ltd	薄膜電晶體陣列面板及包括此面板之顯示器裝置
US20060260437A1 (en) *	2004-10-06	2006-11-23	Showa Denko K.K.	Niobium powder, niobium granulated powder, niobium sintered body, capacitor and production method thereof
US7501991B2 (en) *	2007-02-19	2009-03-10	Laird Technologies, Inc.	Asymmetric dipole antenna
KR20120028376A (ko) *	2009-06-15	2012-03-22	도요 알루미늄 가부시키가이샤	알루미늄 전해 커패시터 전극 재료 및 그 제조 방법
CN102800480B (zh) *	2012-08-24	2016-01-13	中国振华（集团）新云电子元器件有限责任公司	一种铌电容器阴极制备方法
CN114853016B (zh) *	2022-05-25	2023-08-25	内蒙古科技大学	由含铌矿物制备碳化铌钛的方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1219748A (en)	1969-06-13	1971-01-20	Standard Telephones Cables Ltd	Producing niobium or tantalum powder
US4084965A (en)	1977-01-05	1978-04-18	Fansteel Inc.	Columbium powder and method of making the same
DE3140248C2 (de) *	1981-10-09	1986-06-19	Hermann C. Starck Berlin, 1000 Berlin	Verwendung von dotiertem Ventilmetallpulver für die Herstellung von Elektrolytkondensatoranoden
DE3336453C2 (de)	1983-10-06	1985-11-28	Hermann C. Starck Berlin, 1000 Berlin	Verfahren zur Oberflächenvergrößerung von Niob und Tantal in Form von agglomerierten oder nicht agglomerierten Pulvern
DE3820960A1 (de)	1988-06-22	1989-12-28	Starck Hermann C Fa	Feinkoernige hochreine erdsaeuremetallpulver, verfahren zu ihrer herstellung sowie deren verwendung
US5448447A (en)	1993-04-26	1995-09-05	Cabot Corporation	Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom
DE69516556T2 (de) *	1994-01-26	2000-09-07	H.C. Starck, Inc.	Verfahren zum Nitrieren von Tantalpulver
US6080586A (en) *	1996-04-05	2000-06-27	California Institute Of Technology	Sub-micron chemical imaging with near-field laser desorption
US6165623A (en)	1996-11-07	2000-12-26	Cabot Corporation	Niobium powders and niobium electrolytic capacitors
JP3254163B2 (ja) *	1997-02-28	2002-02-04	昭和電工株式会社	コンデンサ
US6051044A (en)	1998-05-04	2000-04-18	Cabot Corporation	Nitrided niobium powders and niobium electrolytic capacitors
ATE385037T1 (de) *	1998-08-05	2008-02-15	Showa Denko Kk	Niob-sinter für kondensator und verfahren zu seiner herstellung

1999
- 1999-08-05 AT AT99935067T patent/ATE385037T1/de not_active IP Right Cessation
- 1999-08-05 US US09/762,245 patent/US6521013B1/en not_active Expired - Lifetime
- 1999-08-05 JP JP2000564216A patent/JP4873585B2/ja not_active Expired - Lifetime
- 1999-08-05 TW TW088113397A patent/TW430833B/zh not_active IP Right Cessation
- 1999-08-05 DE DE69938056T patent/DE69938056T2/de not_active Expired - Lifetime
- 1999-08-05 KR KR1020017001532A patent/KR100663071B1/ko not_active Expired - Lifetime
- 1999-08-05 EP EP99935067A patent/EP1137021B1/de not_active Expired - Lifetime
- 1999-08-05 HK HK02102325.0A patent/HK1041976B/en not_active IP Right Cessation
- 1999-08-05 AU AU50650/99A patent/AU5065099A/en not_active Abandoned
- 1999-08-05 WO PCT/JP1999/004230 patent/WO2000008662A1/ja not_active Ceased
2002
- 2002-07-08 US US10/189,431 patent/US6656245B2/en not_active Expired - Lifetime
2009
- 2009-07-07 JP JP2009161067A patent/JP4676546B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP1137021A1 (de)	2001-09-26
KR20010072263A (ko)	2001-07-31
KR100663071B1 (ko)	2007-01-02
JP4676546B2 (ja)	2011-04-27
US20020194954A1 (en)	2002-12-26
US6521013B1 (en)	2003-02-18
US6656245B2 (en)	2003-12-02
HK1041976B (en)	2008-08-01
AU5065099A (en)	2000-02-28
JP4873585B2 (ja)	2012-02-08
EP1137021A4 (de)	2006-07-26
JP2009224814A (ja)	2009-10-01
WO2000008662A1 (en)	2000-02-17
DE69938056D1 (de)	2008-03-13
HK1041976A1 (en)	2002-07-26
TW430833B (en)	2001-04-21
DE69938056T2 (de)	2009-01-15
EP1137021B1 (de)	2008-01-23

Legal Events

Date	Code	Title	Description
2008-07-15	RER	Ceased as to paragraph 5 lit. 3 law introducing patent treaties

Publication	Publication Date	Title
DE69938056D1 (de)	2008-03-13	Niob-sinter für kondensator und verfahren zu seiner herstellung
ATE303220T1 (de)	2005-09-15	Niobiumpulver und daraus hergestellte elektrolytische kondensatoren mit hoher kapazität
JP3254163B2 (ja)	2002-02-04	コンデンサ
SG52629A1 (en)	1998-09-28	A process for making an improved tantalum powder and high capacitance low leakage electromode made therefrom
US6215652B1 (en)	2001-04-10	Solid electrolytic capacitor and manufacturing method thereof
JP3434041B2 (ja)	2003-08-04	タンタル粉末及びそれを用いた電解コンデンサ
JP2009130018A (ja)	2009-06-11	固体電解コンデンサ
EP0974988A3 (de)	2001-04-25	Herstellungsverfahren eines Elektrolytkondensators
EP1618574B1 (de)	2010-09-22	Sinterkörperelektrode und festelektrolytkondensator mit der elektrode
AU6017200A (en)	2001-02-05	Niobium powder, its sintered body, and capacitor comprising the same
JP2010129864A (ja)	2010-06-10	固体電解コンデンサ
DE60040844D1 (de)	2009-01-02	Festelektrolytkondensator und Verfahren zu seiner Herstellung
DE60024591D1 (de)	2006-01-12	Kondensator-pulver-mischung, daraus hergestellter sinterkörper und aus dem sinterkörper hergestellter kondensator
AU2002361502A1 (en)	2003-06-23	Niobium alloy, sintered body thereof, and capacitor using the same
RU2003127948A (ru)	2005-03-27	Тантал-кремниевые и ниобий-кремниевые подложки для анодов
DE60035047D1 (de)	2007-07-12	Festelektrolytkondensator und herstellungsverfahren
EP0024302A3 (de)	1981-12-16	Trockenelektrolyt-Kondensator
JPH10335187A (ja)	1998-12-18	固体電解コンデンサおよびその製造方法
JPH11186114A (ja)	1999-07-09	電解コンデンサとその製造方法
RU95116674A (ru)	1997-11-10	Твердотельный электролитический конденсатор
KR940026987A (ko)	1994-12-10	적층 세라믹 콘덴서의 니켈 페이스트(Ni-Paste) 조성물
JP2004035989A5 (de)	2005-05-26
KR960012065A (ko)	1996-04-20	탄탈고체 전해콘덴서의 탄탈소자 제조방법