ATE385043T1 - Abbildungsvorrichtung - Google Patents

Abbildungsvorrichtung

Info

Publication number
ATE385043T1
ATE385043T1 AT03760788T AT03760788T ATE385043T1 AT E385043 T1 ATE385043 T1 AT E385043T1 AT 03760788 T AT03760788 T AT 03760788T AT 03760788 T AT03760788 T AT 03760788T AT E385043 T1 ATE385043 T1 AT E385043T1
Authority
AT
Austria
Prior art keywords
brick
detection
addressing
photosensitive material
imaging device
Prior art date
Application number
AT03760788T
Other languages
English (en)
Inventor
Cyril Guedj
Jose Alvarez
Yvan Bonnassieux
Jean-Paul Kleider
Norbert Moussy
I Cabarrocas Pere Roca
Svetoslav Tchakarov
Original Assignee
Commissariat Energie Atomique
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0207894A external-priority patent/FR2841383B1/fr
Priority claimed from FR0207893A external-priority patent/FR2841382B1/fr
Application filed by Commissariat Energie Atomique, Centre Nat Rech Scient filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE385043T1 publication Critical patent/ATE385043T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Meat, Egg Or Seafood Products (AREA)
  • Massaging Devices (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Light Receiving Elements (AREA)
AT03760788T 2002-06-25 2003-06-25 Abbildungsvorrichtung ATE385043T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0207894A FR2841383B1 (fr) 2002-06-25 2002-06-25 Imageur pour ultraviolet
FR0207893A FR2841382B1 (fr) 2002-06-25 2002-06-25 Imageur pour lumiere visible

Publications (1)

Publication Number Publication Date
ATE385043T1 true ATE385043T1 (de) 2008-02-15

Family

ID=30001931

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03760788T ATE385043T1 (de) 2002-06-25 2003-06-25 Abbildungsvorrichtung

Country Status (5)

Country Link
US (1) US7189952B2 (de)
EP (1) EP1516368B1 (de)
AT (1) ATE385043T1 (de)
DE (1) DE60318848T2 (de)
WO (1) WO2004001853A2 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040135209A1 (en) * 2002-02-05 2004-07-15 Tzu-Chiang Hsieh Camera with MOS or CMOS sensor array
EP1677364A1 (de) * 2004-12-30 2006-07-05 St Microelectronics S.A. Lichtdetektor auf einer integrierten Schaltung sitzend
KR100790237B1 (ko) * 2005-12-29 2008-01-02 매그나칩 반도체 유한회사 이미지 센서의 금속배선 형성방법
US7714300B1 (en) * 2006-06-27 2010-05-11 Kla-Tencor Technologies Corporation High-speed high-efficiency solid-state electron detector
FR2907261B1 (fr) 2006-10-12 2009-01-30 Commissariat Energie Atomique Dispositif de couplage electromagnetique d'un detecteur de rayonnement electromagnetique
KR100872719B1 (ko) * 2007-04-17 2008-12-05 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조방법
JP2009065161A (ja) * 2007-09-07 2009-03-26 Dongbu Hitek Co Ltd イメージセンサ及びその製造方法
JP4503060B2 (ja) * 2007-09-21 2010-07-14 Ｏｋｉセミコンダクタ株式会社 紫外線センサ、紫外線センサの設定方法
IL189254A0 (en) * 2008-02-04 2008-08-07 Garber Valery Quantum uncooled infra-red photo-detector
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US9406709B2 (en) 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8274039B2 (en) 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US9000353B2 (en) 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US8835831B2 (en) * 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US10297707B1 (en) * 2009-02-23 2019-05-21 Tatiana Globus Thin film photovoltaic cell system and method of manufacture
JP5553693B2 (ja) * 2010-06-30 2014-07-16 キヤノン株式会社 固体撮像装置及び撮像システム
KR101154709B1 (ko) * 2010-07-28 2012-06-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
US8753917B2 (en) * 2010-12-14 2014-06-17 International Business Machines Corporation Method of fabricating photoconductor-on-active pixel device
JP6197312B2 (ja) * 2013-03-12 2017-09-20 株式会社リコー センサ素子およびセンサ素子の製造方法
FR3108786B1 (fr) 2020-03-31 2022-04-01 St Microelectronics Crolles 2 Sas Pixel d'un capteur de lumière et son procédé de fabrication
US12243895B2 (en) * 2020-03-31 2025-03-04 Stmicroelectronics (Crolles 2) Sas Pixel of a light sensor and method for manufacturing same
CN112331687A (zh) * 2020-11-30 2021-02-05 联合微电子中心有限责任公司 一种cmos图像传感器及其制作方法
FR3117268B1 (fr) * 2020-12-08 2022-12-09 St Microelectronics Crolles 2 Sas Pixel d'un capteur de lumière et son procédé de fabrication
EP4117017A1 (de) * 2021-07-05 2023-01-11 ASML Netherlands B.V. Detektor für geladene teilchen
US20230112479A1 (en) * 2021-10-12 2023-04-13 Tyntek Corporation Photodiode
KR102933578B1 (ko) * 2022-11-08 2026-03-04 삼성전기주식회사 카메라 모듈

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0239808B1 (de) * 1986-03-03 1991-02-27 Kabushiki Kaisha Toshiba Strahlungsdetektor
IT1277856B1 (it) 1995-02-09 1997-11-12 Univ Roma Rivelatore di radiazione ultravioletta in film sottile, con opzione di elevata selettivita' spettrale.
US6114739A (en) 1998-10-19 2000-09-05 Agilent Technologies Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode
US6018187A (en) * 1998-10-19 2000-01-25 Hewlett-Packard Cmpany Elevated pin diode active pixel sensor including a unique interconnection structure
US6373117B1 (en) 1999-05-03 2002-04-16 Agilent Technologies, Inc. Stacked multiple photosensor structure including independent electrical connections to each photosensor

Also Published As

Publication number Publication date
DE60318848T2 (de) 2009-02-05
WO2004001853A3 (fr) 2004-04-08
EP1516368B1 (de) 2008-01-23
US20050224707A1 (en) 2005-10-13
EP1516368A2 (de) 2005-03-23
US7189952B2 (en) 2007-03-13
WO2004001853A2 (fr) 2003-12-31
DE60318848D1 (de) 2008-03-13

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Legal Events

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