ATE386073T1 - Positiv arbeitende resistzusammensetzung und verfahren zur herstellung von mustern unter verwendung dieser zusammensetzung. - Google Patents

Positiv arbeitende resistzusammensetzung und verfahren zur herstellung von mustern unter verwendung dieser zusammensetzung.

Info

Publication number
ATE386073T1
ATE386073T1 AT05020807T AT05020807T ATE386073T1 AT E386073 T1 ATE386073 T1 AT E386073T1 AT 05020807 T AT05020807 T AT 05020807T AT 05020807 T AT05020807 T AT 05020807T AT E386073 T1 ATE386073 T1 AT E386073T1
Authority
AT
Austria
Prior art keywords
composition
resist composition
working resist
acid
repeating unit
Prior art date
Application number
AT05020807T
Other languages
English (en)
Inventor
Tomoya Sasaki
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of ATE386073T1 publication Critical patent/ATE386073T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0033—Additives activating the degradation of the macromolecular compound
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
    • C08L25/18—Homopolymers or copolymers of aromatic monomers containing elements other than carbon and hydrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
AT05020807T 2004-09-24 2005-09-23 Positiv arbeitende resistzusammensetzung und verfahren zur herstellung von mustern unter verwendung dieser zusammensetzung. ATE386073T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004278320A JP4368282B2 (ja) 2004-09-24 2004-09-24 ポジ型レジスト組成物及びそれを用いたパターン形成方法

Publications (1)

Publication Number Publication Date
ATE386073T1 true ATE386073T1 (de) 2008-03-15

Family

ID=35355673

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05020807T ATE386073T1 (de) 2004-09-24 2005-09-23 Positiv arbeitende resistzusammensetzung und verfahren zur herstellung von mustern unter verwendung dieser zusammensetzung.

Country Status (5)

Country Link
US (1) US7410747B2 (de)
EP (1) EP1640409B1 (de)
JP (1) JP4368282B2 (de)
AT (1) ATE386073T1 (de)
DE (1) DE602005004712T2 (de)

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JP4958584B2 (ja) * 2006-02-28 2012-06-20 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US20090008633A1 (en) * 2007-04-25 2009-01-08 Samsung Electronics Co., Ltd. Nonvolatile memory device using conductive organic polymer having nanocrystals embedded therein and method of manufacturing the nonvlatile memory device
JP5530651B2 (ja) * 2008-07-14 2014-06-25 富士フイルム株式会社 感活性光線性または感放射線性樹脂組成物、及び該組成物を用いたパターン形成方法
JP5658920B2 (ja) * 2009-06-23 2015-01-28 富士フイルム株式会社 化学増幅型レジスト組成物、並びに、これを用いたモールドの作成方法、及び、レジスト膜
JP6115322B2 (ja) * 2012-06-19 2017-04-19 信越化学工業株式会社 パターン形成方法
JP6095416B2 (ja) * 2012-10-08 2017-03-15 株式会社日本触媒 スチレン系ポリマー溶液
KR101917406B1 (ko) * 2014-03-21 2018-11-09 동우 화인켐 주식회사 고색재현이 가능한 착색 광경화성 수지조성물, 컬러필터 및 이를 구비한 액정표시장치
JP2015184458A (ja) * 2014-03-24 2015-10-22 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP6377928B2 (ja) * 2014-03-25 2018-08-22 株式会社日本触媒 アルカリ可溶性樹脂を含むレジスト組成物及びその保存方法
JP6419342B2 (ja) * 2015-08-19 2018-11-07 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP6528606B2 (ja) * 2015-08-26 2019-06-12 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP2017181696A (ja) * 2016-03-29 2017-10-05 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP7255375B2 (ja) * 2019-06-10 2023-04-11 Jsr株式会社 感放射線性組成物及びパターン形成方法
WO2026053667A1 (ja) * 2024-09-04 2026-03-12 Jsr株式会社 感放射線性組成物、レジストパターン形成方法、重合体及び化合物

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DE3406927A1 (de) * 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen
US4603101A (en) * 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
US5342727A (en) * 1988-10-21 1994-08-30 Hoechst Celanese Corp. Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition
JP2712700B2 (ja) * 1990-01-30 1998-02-16 松下電器産業株式会社 パターン形成方法
JPH0641221A (ja) 1992-07-22 1994-02-15 Shin Etsu Chem Co Ltd ポリ（３−メチル−４−ヒドロキシスチレン）及びその製造方法
EP0601974B1 (de) * 1992-12-04 1997-05-28 OCG Microelectronic Materials Inc. Positiv-Photoresist mit verbesserten Prozesseigenschaften
JP2936956B2 (ja) * 1993-04-15 1999-08-23 信越化学工業株式会社 レジスト材料
EP0659781A3 (de) 1993-12-21 1995-09-27 Ciba Geigy Ag Maleinimidcopolymere, insbesonder für Photoresists.
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JP3173368B2 (ja) 1995-04-12 2001-06-04 信越化学工業株式会社 高分子化合物及び化学増幅ポジ型レジスト材料
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JP2000122291A (ja) 1998-10-09 2000-04-28 Mitsubishi Electric Corp 化学増幅レジスト用材料、感光性樹脂組成物および該組成物を半導体装置の製造に使用する方法
JP2000241976A (ja) 1999-02-22 2000-09-08 Mitsubishi Rayon Co Ltd レジスト用（共）重合体およびそれを用いたレジスト組成物
JP3956078B2 (ja) 1999-10-20 2007-08-08 信越化学工業株式会社 レジスト組成物用ベースポリマー並びにレジスト材料及びパターン形成方法
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JP3992993B2 (ja) 2001-02-21 2007-10-17 富士フイルム株式会社 ポジ型電子線、ｘ線又はｅｕｖ用レジスト組成物
JP3891257B2 (ja) * 2001-06-25 2007-03-14 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
TWI225968B (en) * 2001-09-28 2005-01-01 Shinetsu Chemical Co Novel sulfonyliazomethanes, photoacid generators, resist compositions, and patterning process
DE10224217A1 (de) * 2002-05-31 2003-12-18 Infineon Technologies Ag Photosensitiver Lack zur Beschichtung auf einem Halbleitersubstrat oder einer Maske
JP4048535B2 (ja) * 2002-11-05 2008-02-20 富士フイルム株式会社 ポジ型レジスト組成物
US7442487B2 (en) * 2003-12-30 2008-10-28 Intel Corporation Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists

Also Published As

Publication number Publication date
EP1640409B1 (de) 2008-02-13
US7410747B2 (en) 2008-08-12
JP2006091578A (ja) 2006-04-06
JP4368282B2 (ja) 2009-11-18
DE602005004712T2 (de) 2009-02-12
DE602005004712D1 (de) 2008-03-27
EP1640409A1 (de) 2006-03-29
US20060068322A1 (en) 2006-03-30

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