ATE386786T1 - Poliermasse, verfahren zu ihrer herstellung und polierverfahren - Google Patents

Poliermasse, verfahren zu ihrer herstellung und polierverfahren

Info

Publication number
ATE386786T1
ATE386786T1 AT02770253T AT02770253T ATE386786T1 AT E386786 T1 ATE386786 T1 AT E386786T1 AT 02770253 T AT02770253 T AT 02770253T AT 02770253 T AT02770253 T AT 02770253T AT E386786 T1 ATE386786 T1 AT E386786T1
Authority
AT
Austria
Prior art keywords
polishing
compound
low
carbon atoms
producing
Prior art date
Application number
AT02770253T
Other languages
English (en)
Inventor
Satoshi Takemiya
Norihito Nakazawa
Yoshinori Kon
Original Assignee
Asahi Glass Co Ltd
Agc Seimi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, Agc Seimi Chemical Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of ATE386786T1 publication Critical patent/ATE386786T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
AT02770253T 2001-10-26 2002-10-23 Poliermasse, verfahren zu ihrer herstellung und polierverfahren ATE386786T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001329148 2001-10-26
JP2001353207 2001-11-19

Publications (1)

Publication Number Publication Date
ATE386786T1 true ATE386786T1 (de) 2008-03-15

Family

ID=26624134

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02770253T ATE386786T1 (de) 2001-10-26 2002-10-23 Poliermasse, verfahren zu ihrer herstellung und polierverfahren

Country Status (9)

Country Link
US (1) US7854777B2 (de)
EP (1) EP1445796B1 (de)
JP (2) JP4576117B2 (de)
KR (2) KR100952870B1 (de)
CN (1) CN1306562C (de)
AT (1) ATE386786T1 (de)
DE (1) DE60225171T2 (de)
TW (1) TWI231821B (de)
WO (1) WO2003036705A1 (de)

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KR100463315B1 (ko) * 1998-12-28 2005-01-07 히다치 가세고교 가부시끼가이샤 금속용 연마액 재료, 금속용 연마액, 그 제조방법 및그것을 사용한 연마방법
KR100704690B1 (ko) * 2001-10-31 2007-04-10 히다치 가세고교 가부시끼가이샤 연마액 및 연마방법
US20100009540A1 (en) * 2002-09-25 2010-01-14 Asahi Glass Company Limited Polishing compound, its production process and polishing method
KR20050057209A (ko) * 2002-09-25 2005-06-16 세이미 케미칼 가부시끼가이샤 연마제 조성물, 그 제조 방법 및 연마 방법
EP1622742A4 (de) * 2003-05-12 2009-06-10 Advanced Tech Materials Cmp-zusammensetzungen für schritt-ii-kupferauskleidung und andere zugeordnete materialien und verwendungsverfahren dafür
US7153335B2 (en) * 2003-10-10 2006-12-26 Dupont Air Products Nanomaterials Llc Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
JP2005294798A (ja) * 2004-03-08 2005-10-20 Asahi Glass Co Ltd 研磨剤および研磨方法
US7846349B2 (en) * 2004-12-22 2010-12-07 Applied Materials, Inc. Solution for the selective removal of metal from aluminum substrates
US7446046B2 (en) * 2005-01-06 2008-11-04 Intel Corporation Selective polish for fabricating electronic devices
US7467988B2 (en) * 2005-04-08 2008-12-23 Ferro Corporation Slurry composition and method for polishing organic polymer-based ophthalmic substrates
US7294044B2 (en) * 2005-04-08 2007-11-13 Ferro Corporation Slurry composition and method for polishing organic polymer-based ophthalmic substrates
US7452481B2 (en) * 2005-05-16 2008-11-18 Kabushiki Kaisha Kobe Seiko Sho Polishing slurry and method of reclaiming wafers
TWI271555B (en) * 2005-06-13 2007-01-21 Basf Ag Slurry composition for polishing color filter
US20080171441A1 (en) * 2005-06-28 2008-07-17 Asahi Glass Co., Ltd. Polishing compound and method for producing semiconductor integrated circuit device
WO2007015551A1 (ja) * 2005-08-04 2007-02-08 Asahi Glass Company, Limited 研磨剤組成物および研磨方法
KR20080042043A (ko) * 2005-09-09 2008-05-14 아사히 가라스 가부시키가이샤 연마제, 피연마면의 연마 방법 및 반도체 집적 회로 장치의제조 방법
US20070068902A1 (en) * 2005-09-29 2007-03-29 Yasushi Matsunami Polishing composition and polishing method
US7763312B2 (en) * 2006-04-17 2010-07-27 Elantas Pdg, Inc. Dispersion of nano-alumina in a resin or solvent system
JP5725145B2 (ja) * 2006-10-11 2015-05-27 日立化成株式会社 金属用研磨液とその製造方法及び金属用研磨液を用いた被研磨膜の研磨方法
WO2009056491A1 (en) * 2007-10-29 2009-05-07 Basf Se Cmp slurry composition and process for planarizing copper containing surfaces provided with a diffusion barrier layer
EP2237311A4 (de) * 2008-02-01 2011-11-30 Fujimi Inc Polierzusammensetzung und polierverfahren dafür
FR2932108B1 (fr) * 2008-06-10 2019-07-05 Soitec Polissage de couches de germanium
US8398779B2 (en) * 2009-03-02 2013-03-19 Applied Materials, Inc. Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates
US8551887B2 (en) 2009-12-22 2013-10-08 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a copper-containing substrate
WO2011122415A1 (ja) * 2010-03-29 2011-10-06 旭硝子株式会社 研磨剤、研磨方法および半導体集積回路装置の製造方法
TWI605112B (zh) * 2011-02-21 2017-11-11 福吉米股份有限公司 研磨用組成物
CN102925060B (zh) * 2012-11-09 2014-03-26 济南大学 一种大理石复合抛光粉的制备方法
CN105658757B (zh) * 2013-10-23 2019-02-19 东进世美肯株式会社 金属膜抛光浆料组合物及使用其减少金属膜抛光时产生的划痕的方法
JP6327746B2 (ja) * 2014-03-31 2018-05-23 株式会社フジミインコーポレーテッド 研磨用組成物
CN104263249B (zh) * 2014-09-26 2016-06-29 深圳市力合材料有限公司 一种硅溶胶的处理方法
JP6652638B2 (ja) * 2016-06-03 2020-02-26 富士フイルム株式会社 研磨液、及び化学的機械的研磨方法
WO2018056122A1 (ja) * 2016-09-21 2018-03-29 日立化成株式会社 スラリ及び研磨方法
CN109280492A (zh) * 2017-07-21 2019-01-29 天津西美科技有限公司 一种磷化铟晶片抛光液
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
CN109746771B (zh) * 2019-02-14 2020-11-20 南京航空航天大学 一种CsPbX3无机钙钛矿晶体材料的抛光方法
WO2022020236A1 (en) * 2020-07-20 2022-01-27 Cmc Materials, Inc. Silicon wafer polishing composition and method
CN112142630B (zh) * 2020-10-28 2022-06-28 雅邦绿色过程与新材料研究院南京有限公司 一种从半导体工业废液中回收二甲基亚砜的方法
EP4642588A1 (de) * 2022-12-28 2025-11-05 Saint-gobain Abrasives, Inc Schleifartikel mit umweltfreundlichem lösungsmittel

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US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
JPH10166258A (ja) 1996-12-06 1998-06-23 Tadahiro Omi 研磨剤組成物
JPH1140526A (ja) * 1997-07-22 1999-02-12 Hitachi Ltd 配線形成方法及び半導体装置の製造方法
US5897375A (en) 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
ATE474899T1 (de) * 1998-10-23 2010-08-15 Fujifilm Electronic Materials Eine chemisch-mechanisch polierende aufschlämmung,eine beschleunigerlösung enthaltend
KR100463315B1 (ko) * 1998-12-28 2005-01-07 히다치 가세고교 가부시끼가이샤 금속용 연마액 재료, 금속용 연마액, 그 제조방법 및그것을 사용한 연마방법
JP4156137B2 (ja) * 1999-07-19 2008-09-24 株式会社トクヤマ 金属膜用研磨剤
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
JP3805588B2 (ja) * 1999-12-27 2006-08-02 株式会社日立製作所 半導体装置の製造方法
JP2001267273A (ja) * 2000-01-11 2001-09-28 Sumitomo Chem Co Ltd 金属用研磨材、研磨組成物及び研磨方法
TW572980B (en) * 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
US6355075B1 (en) * 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
JP2002050595A (ja) * 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
US6569349B1 (en) * 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6740589B2 (en) * 2000-11-30 2004-05-25 Showa Denko Kabushiki Kaisha Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same
US20020104269A1 (en) * 2001-01-26 2002-08-08 Applied Materials, Inc. Photochemically enhanced chemical polish
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US6812193B2 (en) * 2001-08-31 2004-11-02 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6620215B2 (en) * 2001-12-21 2003-09-16 Dynea Canada, Ltd. Abrasive composition containing organic particles for chemical mechanical planarization
US20030168627A1 (en) * 2002-02-22 2003-09-11 Singh Rajiv K. Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers

Also Published As

Publication number Publication date
US20040194392A1 (en) 2004-10-07
CN1572017A (zh) 2005-01-26
JP4576117B2 (ja) 2010-11-04
TWI231821B (en) 2005-05-01
KR20040052221A (ko) 2004-06-22
KR20100009581A (ko) 2010-01-27
WO2003036705A1 (en) 2003-05-01
KR100939472B1 (ko) 2010-01-29
KR100952870B1 (ko) 2010-04-13
EP1445796A4 (de) 2004-11-17
EP1445796A1 (de) 2004-08-11
DE60225171T2 (de) 2008-06-05
US7854777B2 (en) 2010-12-21
JPWO2003036705A1 (ja) 2005-02-17
EP1445796B1 (de) 2008-02-20
DE60225171D1 (de) 2008-04-03
CN1306562C (zh) 2007-03-21
JP2010251778A (ja) 2010-11-04

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