ATE387726T1 - Phasenwechsel-material enthaltendes elektrisches bauelement - Google Patents

Phasenwechsel-material enthaltendes elektrisches bauelement

Info

Publication number
ATE387726T1
ATE387726T1 AT03773940T AT03773940T ATE387726T1 AT E387726 T1 ATE387726 T1 AT E387726T1 AT 03773940 T AT03773940 T AT 03773940T AT 03773940 T AT03773940 T AT 03773940T AT E387726 T1 ATE387726 T1 AT E387726T1
Authority
AT
Austria
Prior art keywords
phase
change material
phase change
electrical component
component containing
Prior art date
Application number
AT03773940T
Other languages
English (en)
Inventor
Martijn Lankhorst
Pieterson Liesbeth Van
Robertus Wolters
Erwin Meinders
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE387726T1 publication Critical patent/ATE387726T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Landscapes

  • Semiconductor Memories (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Inorganic Insulating Materials (AREA)
  • Organic Insulating Materials (AREA)
AT03773940T 2002-12-19 2003-12-03 Phasenwechsel-material enthaltendes elektrisches bauelement ATE387726T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP02080430 2002-12-19
EP03100583 2003-03-07

Publications (1)

Publication Number Publication Date
ATE387726T1 true ATE387726T1 (de) 2008-03-15

Family

ID=32683811

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03773940T ATE387726T1 (de) 2002-12-19 2003-12-03 Phasenwechsel-material enthaltendes elektrisches bauelement

Country Status (9)

Country Link
US (2) USRE48202E1 (de)
EP (1) EP1576676B1 (de)
JP (1) JP2006511971A (de)
KR (1) KR20050092017A (de)
AT (1) ATE387726T1 (de)
AU (1) AU2003282323A1 (de)
DE (1) DE60319424T2 (de)
TW (1) TW200503299A (de)
WO (1) WO2004057684A1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200529414A (en) * 2004-02-06 2005-09-01 Renesas Tech Corp Storage
KR20070028604A (ko) 2004-06-30 2007-03-12 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 나노선(ｎａｎｏｗｉｒｅ)에 의해 접촉되는 전도성 있는재료로 된 층이 있는 전기 장치 및 그 제조 방법
KR20070050107A (ko) 2004-09-27 2007-05-14 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 상변화 물질을 포함하는 나노와이어 전기 소자
JP2006245251A (ja) * 2005-03-03 2006-09-14 Mitsubishi Materials Corp 非晶質状態が安定な相変化記録膜およびこの相変化記録膜を形成するためのスパッタリングターゲット
US20070052009A1 (en) * 2005-09-07 2007-03-08 The Regents Of The University Of California Phase change memory device and method of making same
WO2007057972A1 (ja) * 2005-11-21 2007-05-24 Renesas Technology Corp. 半導体装置
KR20090007363A (ko) 2006-03-24 2009-01-16 엔엑스피 비 브이 상변화 저항기를 갖는 전기 디바이스 및 전기 장치
KR101177284B1 (ko) * 2007-01-18 2012-08-24 삼성전자주식회사 상변화 물질층과 그 제조방법과 이 방법으로 형성된 상변화물질층을 포함하는 상변화 메모리 소자와 그 제조 및 동작방법
US8357920B2 (en) 2007-04-20 2013-01-22 Nxp B.V. Electronic component, and a method of manufacturing an electronic component
KR100857466B1 (ko) * 2007-05-16 2008-09-08 한국전자통신연구원 안티몬-아연 합금을 이용한 상변화형 비휘발성 메모리 소자및 이의 제조방법
CN100530739C (zh) * 2007-07-17 2009-08-19 中国科学院上海微系统与信息技术研究所 相变材料呈环形的相变存储器器件单元及制备方法
WO2009090589A1 (en) 2008-01-16 2009-07-23 Nxp B.V. Multilayer structure comprising a phase change material layer and a method of producing the same
US7906774B2 (en) 2008-02-01 2011-03-15 Industrial Technology Research Institute Phase change memory device
US20110012082A1 (en) * 2008-03-21 2011-01-20 Nxp B.V. Electronic component comprising a convertible structure
US20110108792A1 (en) * 2009-11-11 2011-05-12 International Business Machines Corporation Single Crystal Phase Change Material
US8129268B2 (en) 2009-11-16 2012-03-06 International Business Machines Corporation Self-aligned lower bottom electrode
US8233317B2 (en) * 2009-11-16 2012-07-31 International Business Machines Corporation Phase change memory device suitable for high temperature operation
US8470635B2 (en) 2009-11-30 2013-06-25 Micron Technology, Inc. Keyhole-free sloped heater for phase change memory
US8017432B2 (en) * 2010-01-08 2011-09-13 International Business Machines Corporation Deposition of amorphous phase change material
CN103247757B (zh) * 2013-04-18 2015-11-18 宁波大学 一种用于相变存储器的Zn-Sb-Te相变存储薄膜材料及其制备方法
US9257643B2 (en) * 2013-08-16 2016-02-09 International Business Machines Corporation Phase change memory cell with improved phase change material
EP3132473A4 (de) 2014-04-18 2018-01-10 Northeastern University Piezoelektrischer mems-resonator mit integrierten speicherstoffschaltern
US11158783B2 (en) 2015-10-13 2021-10-26 Northeastern University Piezoelectric cross-sectional Lamé mode transformer
DE102017210369A1 (de) 2017-06-21 2018-12-27 Lithium Energy and Power GmbH & Co. KG Batteriezelle
US11380843B2 (en) * 2020-02-13 2022-07-05 International Business Machines Corporation Phase change memory using multiple stacks of PCM materials
CN112331767B (zh) * 2020-10-27 2023-12-22 华中科技大学 一种Ge-Sb基相变材料及多级相变存储器

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0387898B1 (de) 1989-03-17 1995-11-29 Fuji Xerox Co., Ltd. Optischer Aufzeichnungsträger
US5534712A (en) 1991-01-18 1996-07-09 Energy Conversion Devices, Inc. Electrically erasable memory elements characterized by reduced current and improved thermal stability
US5166758A (en) 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5128099A (en) 1991-02-15 1992-07-07 Energy Conversion Devices, Inc. Congruent state changeable optical memory material and device
US5714768A (en) 1995-10-24 1998-02-03 Energy Conversion Devices, Inc. Second-layer phase change memory array on top of a logic device
US5825046A (en) * 1996-10-28 1998-10-20 Energy Conversion Devices, Inc. Composite memory material comprising a mixture of phase-change memory material and dielectric material
US5912839A (en) * 1998-06-23 1999-06-15 Energy Conversion Devices, Inc. Universal memory element and method of programming same
IL143589A0 (en) 1998-12-23 2002-04-21 Battelle Memorial Institute Mesoporous silica film from a solution containing a surfactant and methods of making same
CN100377239C (zh) 1999-03-15 2008-03-26 松下电器产业株式会社 信息记录媒体及其制造方法
DE60032129T2 (de) 1999-03-25 2007-09-27 Ovonyx Inc. Elektrisch programmierbares speicherelement mit verbesserten kontakten
US6314014B1 (en) * 1999-12-16 2001-11-06 Ovonyx, Inc. Programmable resistance memory arrays with reference cells
WO2002009206A1 (en) 2000-07-22 2002-01-31 Ovonyx, Inc. Electrically programmable memory element
US6809401B2 (en) 2000-10-27 2004-10-26 Matsushita Electric Industrial Co., Ltd. Memory, writing apparatus, reading apparatus, writing method, and reading method
WO2004032256A1 (en) * 2002-08-21 2004-04-15 Ovonyx, Inc. Utilizing atomic layer deposition for programmable device
CN1311553C (zh) 2001-12-12 2007-04-18 松下电器产业株式会社 非易失性存储器及其制造方法
US6899938B2 (en) * 2002-02-22 2005-05-31 Energy Conversion Devices, Inc. Phase change data storage device for multi-level recording
EP1343154B1 (de) * 2002-03-05 2006-10-25 Mitsubishi Kagaku Media Co., Ltd. Phasenwechselaufzeichnungsmaterial für ein Informationsaufzeichnungsmedium und ein Informationsaufzeichnungsmedium dieses verwendend
US6917532B2 (en) 2002-06-21 2005-07-12 Hewlett-Packard Development Company, L.P. Memory storage device with segmented column line array
US6850432B2 (en) * 2002-08-20 2005-02-01 Macronix International Co., Ltd. Laser programmable electrically readable phase-change memory method and device
US6778420B2 (en) * 2002-09-25 2004-08-17 Ovonyx, Inc. Method of operating programmable resistant element
WO2004057676A2 (en) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Electric device with phase change material and parallel heater
DE60335208D1 (de) 2002-12-19 2011-01-13 Nxp Bv Elektrisches bauelement mit einer schicht aus phasenwechsel-material und verfahren zur seiner herstellung

Also Published As

Publication number Publication date
TW200503299A (en) 2005-01-16
WO2004057684A1 (en) 2004-07-08
JP2006511971A (ja) 2006-04-06
DE60319424D1 (de) 2008-04-10
US8779474B2 (en) 2014-07-15
USRE48202E1 (en) 2020-09-08
AU2003282323A1 (en) 2004-07-14
KR20050092017A (ko) 2005-09-16
EP1576676A1 (de) 2005-09-21
EP1576676B1 (de) 2008-02-27
DE60319424T2 (de) 2009-02-19
US20060049389A1 (en) 2006-03-09

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