ATE388517T1 - Differentiell angeordnetes transistorpaar mit mitteln zur degeneration der transkonduktanz - Google Patents

Differentiell angeordnetes transistorpaar mit mitteln zur degeneration der transkonduktanz

Info

Publication number
ATE388517T1
ATE388517T1 AT01902413T AT01902413T ATE388517T1 AT E388517 T1 ATE388517 T1 AT E388517T1 AT 01902413 T AT01902413 T AT 01902413T AT 01902413 T AT01902413 T AT 01902413T AT E388517 T1 ATE388517 T1 AT E388517T1
Authority
AT
Austria
Prior art keywords
differential pair
control voltage
transconductance
auxiliary circuit
degeneration
Prior art date
Application number
AT01902413T
Other languages
English (en)
Inventor
Pieter Blanken
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE388517T1 publication Critical patent/ATE388517T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45695—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedforward means
    • H03F3/45699—Measuring at the input circuit of the differential amplifier
    • H03F3/45704—Controlling the input circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022—CMOS common source output SEPP amplifiers
    • H03F3/3023—CMOS common source output SEPP amplifiers with asymmetrical driving of the end stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45197—Pl types
    • H03F3/45206—Folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45695—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedforward means
    • H03F3/45699—Measuring at the input circuit of the differential amplifier
    • H03F3/45708—Controlling the common source circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/331—Sigma delta modulation being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45398—Indexing scheme relating to differential amplifiers the AAC comprising a voltage generating circuit as bias circuit for the AAC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45494—Indexing scheme relating to differential amplifiers the CSC comprising one or more potentiometers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Bipolar Transistors (AREA)
  • Control Of Amplification And Gain Control (AREA)
AT01902413T 2000-02-24 2001-02-05 Differentiell angeordnetes transistorpaar mit mitteln zur degeneration der transkonduktanz ATE388517T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP00200636 2000-02-24

Publications (1)

Publication Number Publication Date
ATE388517T1 true ATE388517T1 (de) 2008-03-15

Family

ID=8171078

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01902413T ATE388517T1 (de) 2000-02-24 2001-02-05 Differentiell angeordnetes transistorpaar mit mitteln zur degeneration der transkonduktanz

Country Status (7)

Country Link
US (1) US6480058B2 (de)
EP (1) EP1173923B1 (de)
JP (1) JP2003524980A (de)
KR (1) KR100785533B1 (de)
AT (1) ATE388517T1 (de)
DE (1) DE60133068T2 (de)
WO (1) WO2001063754A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2393868B (en) 2002-10-01 2005-11-16 Ericsson Telefon Ab L M Integrated circuit
US7081796B2 (en) * 2003-09-15 2006-07-25 Silicon Laboratories, Inc. Radio frequency low noise amplifier with automatic gain control
JP2005151460A (ja) 2003-11-19 2005-06-09 Toyota Industries Corp Ａｍ中間周波可変利得増幅回路、可変利得増幅回路及びその半導体集積回路
US7457605B2 (en) * 2004-09-10 2008-11-25 Silicon Laboratories, Inc. Low noise image reject mixer and method therefor
US7339402B2 (en) * 2006-02-13 2008-03-04 Texas Instruments Incorporated Differential amplifier with over-voltage protection and method
TW200906055A (en) * 2007-07-27 2009-02-01 Rafael Microelectronics Inc Low noise amplify

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3641450A (en) * 1970-12-15 1972-02-08 Motorola Inc Gain controlled differential amplifier circuit
NL8001115A (nl) * 1980-02-25 1981-09-16 Philips Nv Geintegreerde schakeling omvattende een aantal spanningsstroomomzetters.
DE69229731T2 (de) * 1992-09-16 1999-12-23 Stmicroelectronics S.R.L., Agrate Brianza Von dem Eingangssignal dynamisch gesteuerter Transkonduktanz-Differenzverstärker
DE69523281T2 (de) * 1995-02-10 2002-07-11 Alcatel, Paris Linearer abstimmbarer Gm-C Integrator
KR100393693B1 (ko) * 1995-04-04 2003-10-22 코닌클리케 필립스 일렉트로닉스 엔.브이. 스위치가능한이득을가지며왜곡이감소된증폭기스테이지
US5642078A (en) * 1995-09-29 1997-06-24 Crystal Semiconductor Corporation Amplifier having frequency compensation by gain degeneration
US5880631A (en) * 1996-02-28 1999-03-09 Qualcomm Incorporated High dynamic range variable gain amplifier
US5994926A (en) * 1996-04-29 1999-11-30 Texas Instruments Incorporated Circuit and method for programmably changing the transconductance of a transconductor circuit
US6011437A (en) * 1998-05-04 2000-01-04 Marvell Technology Group, Ltd. High precision, high bandwidth variable gain amplifier and method
US6271688B1 (en) * 1999-06-17 2001-08-07 Stmicroelectronics S.R.L. MOS transconductor with broad trimming range

Also Published As

Publication number Publication date
KR100785533B1 (ko) 2007-12-12
EP1173923B1 (de) 2008-03-05
KR20020038573A (ko) 2002-05-23
US6480058B2 (en) 2002-11-12
EP1173923A1 (de) 2002-01-23
DE60133068T2 (de) 2009-03-19
JP2003524980A (ja) 2003-08-19
WO2001063754A1 (en) 2001-08-30
DE60133068D1 (de) 2008-04-17
US20010024132A1 (en) 2001-09-27

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties