ATE388527T1 - Eingangsstufe und hochfrequenzempfänger mit rauscharmem quadraturverstärker - Google Patents

Eingangsstufe und hochfrequenzempfänger mit rauscharmem quadraturverstärker

Info

Publication number
ATE388527T1
ATE388527T1 AT01273473T AT01273473T ATE388527T1 AT E388527 T1 ATE388527 T1 AT E388527T1 AT 01273473 T AT01273473 T AT 01273473T AT 01273473 T AT01273473 T AT 01273473T AT E388527 T1 ATE388527 T1 AT E388527T1
Authority
AT
Austria
Prior art keywords
low noise
high frequency
frequency receiver
input stage
noise amplifier
Prior art date
Application number
AT01273473T
Other languages
English (en)
Inventor
Eise Dijkmans
Dominicus Leenaerts
Petrus Baltus
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE388527T1 publication Critical patent/ATE388527T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/38—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers
    • H03F3/387—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers with semiconductor devices only
    • H03F3/393—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45237—Complementary long tailed pairs having parallel inputs and being supplied in series
    • H03F3/45242—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/331—Sigma delta modulation being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/336—A I/Q, i.e. phase quadrature, modulator or demodulator being used in an amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Superheterodyne Receivers (AREA)
AT01273473T 2001-01-24 2001-12-19 Eingangsstufe und hochfrequenzempfänger mit rauscharmem quadraturverstärker ATE388527T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP01200238 2001-01-24

Publications (1)

Publication Number Publication Date
ATE388527T1 true ATE388527T1 (de) 2008-03-15

Family

ID=8179792

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01273473T ATE388527T1 (de) 2001-01-24 2001-12-19 Eingangsstufe und hochfrequenzempfänger mit rauscharmem quadraturverstärker

Country Status (8)

Country Link
US (2) US7787847B2 (de)
EP (1) EP1256179B1 (de)
JP (1) JP4001818B2 (de)
KR (1) KR100868817B1 (de)
CN (1) CN1211938C (de)
AT (1) ATE388527T1 (de)
DE (1) DE60133088T2 (de)
WO (1) WO2002060077A1 (de)

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US7565128B2 (en) * 2003-09-23 2009-07-21 Nxp B.V. High performance low noise amplifier
KR101051568B1 (ko) * 2003-12-10 2011-07-22 텔레폰악티에볼라겟엘엠에릭슨(펍) 혼합 장치
US8059758B2 (en) * 2006-02-10 2011-11-15 Qualcomm, Incorporated Conversion of multiple analog signals in an analog to digital converter
US8099072B2 (en) * 2006-11-21 2012-01-17 Qualcomm Incorporated Frequency changer circuits
US20090082055A1 (en) * 2007-09-21 2009-03-26 Cct Telecom (Hk) Limited Cordless telephone system
DE102008000473B4 (de) 2008-02-29 2016-04-28 Maxim Integrated Gmbh Front-End für RF-Sende-Empfangsanlagen mit implizierter Richtungs-Steuerung und Zeitmultiplex-Verfahren in Submikron-Technologie
US7656230B2 (en) * 2008-03-21 2010-02-02 Qualcomm, Incorporated Quadrature output low noise transconductance amplifier having differential input
US8571510B2 (en) 2008-08-18 2013-10-29 Qualcomm Incorporated High linearity low noise receiver with load switching
US20100279641A1 (en) * 2008-12-31 2010-11-04 Siu-Chuang Ivan Lu Receiver for wireless communication system
US8929848B2 (en) * 2008-12-31 2015-01-06 Mediatek Singapore Pte. Ltd. Interference-robust receiver for a wireless communication system
CN101902242B (zh) * 2010-07-14 2013-10-16 复旦大学 应用于超宽带系统的单端输入差分输出的射频前端电路
TWI509981B (zh) * 2012-10-31 2015-11-21 Shenzhen South Silicon Valley Microelectronics Co Ltd 接收機射頻前端電路及低雜訊放大器
KR102481724B1 (ko) * 2015-09-25 2022-12-29 삼성전자주식회사 무선 전력 송신기
US10014845B2 (en) * 2016-08-09 2018-07-03 Qualcomm Incorporated Systems and methods providing an intermodulation distortion sink
CN106425216B (zh) * 2016-10-17 2018-02-02 北京真空电子技术研究所(中国电子科技集团公司第十二研究所） 一种正交场放大器慢波线的焊接模具
CN112702022B (zh) * 2020-12-28 2021-11-23 北京力通通信有限公司 低噪声大带宽信号处理装置
US11855815B1 (en) * 2022-08-24 2023-12-26 Panasonic Intellectual Property Management Co., Ltd. Real time phase error detection in quadrature demodulators
CN116566412B (zh) * 2023-04-18 2025-08-26 成都信息工程大学 一种cmos集成毫米波自匹配接收机前端电路

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Also Published As

Publication number Publication date
US20020098820A1 (en) 2002-07-25
US20100240336A1 (en) 2010-09-23
KR100868817B1 (ko) 2008-11-14
DE60133088T2 (de) 2009-03-19
EP1256179B1 (de) 2008-03-05
CN1211938C (zh) 2005-07-20
JP2004518366A (ja) 2004-06-17
WO2002060077A1 (en) 2002-08-01
US7787847B2 (en) 2010-08-31
EP1256179A1 (de) 2002-11-13
DE60133088D1 (de) 2008-04-17
CN1419744A (zh) 2003-05-21
US8145176B2 (en) 2012-03-27
KR20030011800A (ko) 2003-02-11
JP4001818B2 (ja) 2007-10-31

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