ATE390742T1 - Automatisches fluorkonzentration-steuersystem für excimerlaser - Google Patents

Automatisches fluorkonzentration-steuersystem für excimerlaser

Info

Publication number
ATE390742T1
ATE390742T1 AT00116028T AT00116028T ATE390742T1 AT E390742 T1 ATE390742 T1 AT E390742T1 AT 00116028 T AT00116028 T AT 00116028T AT 00116028 T AT00116028 T AT 00116028T AT E390742 T1 ATE390742 T1 AT E390742T1
Authority
AT
Austria
Prior art keywords
fluorine concentration
control system
delta
excimer laser
concentration control
Prior art date
Application number
AT00116028T
Other languages
English (en)
Inventor
Mengxiong Gong
Jason R Carlesi
Michael C Binder
Palash P Das
Original Assignee
Cymer Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cymer Inc filed Critical Cymer Inc
Application granted granted Critical
Publication of ATE390742T1 publication Critical patent/ATE390742T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/03—Constructional details of gas laser discharge tubes
    • H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
    • H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
    • H01S3/134—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation in gas lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H01S3/08009—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22—Gases
    • H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2256—KrF, i.e. krypton fluoride is comprised for lasing around 248 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT00116028T 1999-08-04 2000-07-26 Automatisches fluorkonzentration-steuersystem für excimerlaser ATE390742T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/368,208 US6151349A (en) 1998-03-04 1999-08-04 Automatic fluorine control system

Publications (1)

Publication Number Publication Date
ATE390742T1 true ATE390742T1 (de) 2008-04-15

Family

ID=23450305

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00116028T ATE390742T1 (de) 1999-08-04 2000-07-26 Automatisches fluorkonzentration-steuersystem für excimerlaser

Country Status (7)

Country Link
US (1) US6151349A (de)
EP (1) EP1075060B1 (de)
JP (1) JP3978308B2 (de)
KR (1) KR100347426B1 (de)
AT (1) ATE390742T1 (de)
DE (2) DE60038657T2 (de)
TW (1) TW479388B (de)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6490307B1 (en) 1999-03-17 2002-12-03 Lambda Physik Ag Method and procedure to automatically stabilize excimer laser output parameters
US20020127497A1 (en) * 1998-09-10 2002-09-12 Brown Daniel J. W. Large diffraction grating for gas discharge laser
US6567450B2 (en) 1999-12-10 2003-05-20 Cymer, Inc. Very narrow band, two chamber, high rep rate gas discharge laser system
US6389052B2 (en) 1999-03-17 2002-05-14 Lambda Physik Ag Laser gas replenishment method
US6965624B2 (en) 1999-03-17 2005-11-15 Lambda Physik Ag Laser gas replenishment method
US6243406B1 (en) * 1999-03-12 2001-06-05 Peter Heist Gas performance control system for gas discharge lasers
US6727731B1 (en) 1999-03-12 2004-04-27 Lambda Physik Ag Energy control for an excimer or molecular fluorine laser
US6714577B1 (en) 1999-03-17 2004-03-30 Lambda Physik Ag Energy stabilized gas discharge laser
US6865210B2 (en) 2001-05-03 2005-03-08 Cymer, Inc. Timing control for two-chamber gas discharge laser system
US6625191B2 (en) * 1999-12-10 2003-09-23 Cymer, Inc. Very narrow band, two chamber, high rep rate gas discharge laser system
US6795474B2 (en) * 2000-11-17 2004-09-21 Cymer, Inc. Gas discharge laser with improved beam path
US6801560B2 (en) * 1999-05-10 2004-10-05 Cymer, Inc. Line selected F2 two chamber laser system
US7856044B2 (en) 1999-05-10 2010-12-21 Cymer, Inc. Extendable electrode for gas discharge laser
US6609540B1 (en) * 1999-06-24 2003-08-26 Showa Denko Kabushiki Kaisha Method and apparatus for supplying fluorine gas
JP2003523091A (ja) * 2000-02-11 2003-07-29 ラムダ フィジーク アーゲー 安定化した平均パルスエネルギーを有するガス放電レーザー
US7180081B2 (en) 2000-06-09 2007-02-20 Cymer, Inc. Discharge produced plasma EUV light source
US6904073B2 (en) * 2001-01-29 2005-06-07 Cymer, Inc. High power deep ultraviolet laser with long life optics
US6914919B2 (en) * 2000-06-19 2005-07-05 Cymer, Inc. Six to ten KHz, or greater gas discharge laser system
US6693939B2 (en) 2001-01-29 2004-02-17 Cymer, Inc. Laser lithography light source with beam delivery
US6912052B2 (en) * 2000-11-17 2005-06-28 Cymer, Inc. Gas discharge MOPA laser spectral analysis module
US6839372B2 (en) * 2000-11-17 2005-01-04 Cymer, Inc. Gas discharge ultraviolet laser with enclosed beam path with added oxidizer
US6704339B2 (en) 2001-01-29 2004-03-09 Cymer, Inc. Lithography laser with beam delivery and beam pointing control
US7190707B2 (en) * 2001-01-29 2007-03-13 Cymer, Inc. Gas discharge laser light source beam delivery unit
US6704340B2 (en) 2001-01-29 2004-03-09 Cymer, Inc. Lithography laser system with in-place alignment tool
US20050025882A1 (en) * 2001-01-29 2005-02-03 Partlo William N. Optical elements with protective undercoating
US7039086B2 (en) * 2001-04-09 2006-05-02 Cymer, Inc. Control system for a two chamber gas discharge laser
US7079564B2 (en) * 2001-04-09 2006-07-18 Cymer, Inc. Control system for a two chamber gas discharge laser
US7230964B2 (en) * 2001-04-09 2007-06-12 Cymer, Inc. Lithography laser with beam delivery and beam pointing control
US6690704B2 (en) 2001-04-09 2004-02-10 Cymer, Inc. Control system for a two chamber gas discharge laser
US7061959B2 (en) * 2001-04-18 2006-06-13 Tcz Gmbh Laser thin film poly-silicon annealing system
US7167499B2 (en) * 2001-04-18 2007-01-23 Tcz Pte. Ltd. Very high energy, high stability gas discharge laser surface treatment system
US7009140B2 (en) * 2001-04-18 2006-03-07 Cymer, Inc. Laser thin film poly-silicon annealing optical system
US7598509B2 (en) 2004-11-01 2009-10-06 Cymer, Inc. Laser produced plasma EUV light source
US7372056B2 (en) 2005-06-29 2008-05-13 Cymer, Inc. LPP EUV plasma source material target delivery system
US7465946B2 (en) 2004-03-10 2008-12-16 Cymer, Inc. Alternative fuels for EUV light source
US7439530B2 (en) 2005-06-29 2008-10-21 Cymer, Inc. LPP EUV light source drive laser system
US6928093B2 (en) * 2002-05-07 2005-08-09 Cymer, Inc. Long delay and high TIS pulse stretcher
US20050259709A1 (en) 2002-05-07 2005-11-24 Cymer, Inc. Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
US7378673B2 (en) 2005-02-25 2008-05-27 Cymer, Inc. Source material dispenser for EUV light source
US7088758B2 (en) 2001-07-27 2006-08-08 Cymer, Inc. Relax gas discharge laser lithography light source
US6963595B2 (en) * 2001-08-29 2005-11-08 Cymer, Inc. Automatic gas control system for a gas discharge laser
US7830934B2 (en) 2001-08-29 2010-11-09 Cymer, Inc. Multi-chamber gas discharge laser bandwidth control through discharge timing
US20050100072A1 (en) * 2001-11-14 2005-05-12 Rao Rajasekhar M. High power laser output beam energy density reduction
US7671349B2 (en) 2003-04-08 2010-03-02 Cymer, Inc. Laser produced plasma EUV light source
US6798812B2 (en) 2002-01-23 2004-09-28 Cymer, Inc. Two chamber F2 laser system with F2 pressure based line selection
US7016388B2 (en) * 2002-05-07 2006-03-21 Cymer, Inc. Laser lithography light source with beam delivery
US7741639B2 (en) * 2003-01-31 2010-06-22 Cymer, Inc. Multi-chambered excimer or molecular fluorine gas discharge laser fluorine injection control
US7217941B2 (en) 2003-04-08 2007-05-15 Cymer, Inc. Systems and methods for deflecting plasma-generated ions to prevent the ions from reaching an internal component of an EUV light source
US7277188B2 (en) 2003-04-29 2007-10-02 Cymer, Inc. Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
US7209507B2 (en) * 2003-07-30 2007-04-24 Cymer, Inc. Method and apparatus for controlling the output of a gas discharge MOPA laser system
US6894785B2 (en) * 2003-09-30 2005-05-17 Cymer, Inc. Gas discharge MOPA laser spectral analysis module
US6873418B1 (en) 2003-09-30 2005-03-29 Cymer, Inc. Optical mountings for gas discharge MOPA laser spectral analysis module
US7277464B2 (en) * 2003-12-18 2007-10-02 Cymer, Inc. Method and apparatus for controlling the output of a gas discharge laser system
US7196342B2 (en) 2004-03-10 2007-03-27 Cymer, Inc. Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
US7522650B2 (en) * 2004-03-31 2009-04-21 Cymer, Inc. Gas discharge laser chamber improvements
US7006547B2 (en) * 2004-03-31 2006-02-28 Cymer, Inc. Very high repetition rate narrow band gas discharge laser system
US7355191B2 (en) 2004-11-01 2008-04-08 Cymer, Inc. Systems and methods for cleaning a chamber window of an EUV light source
US7482609B2 (en) 2005-02-28 2009-01-27 Cymer, Inc. LPP EUV light source drive laser system
US20060222034A1 (en) 2005-03-31 2006-10-05 Cymer, Inc. 6 Khz and above gas discharge laser system
JP4650881B2 (ja) * 2005-04-20 2011-03-16 株式会社小松製作所 エキシマレーザ装置とレーザガス交換方法と部分ガス交換量演算方法
US7633989B2 (en) * 2005-06-27 2009-12-15 Cymer, Inc. High pulse repetition rate gas discharge laser
US7365349B2 (en) 2005-06-27 2008-04-29 Cymer, Inc. EUV light source collector lifetime improvements
US7317536B2 (en) 2005-06-27 2008-01-08 Cymer, Inc. Spectral bandwidth metrology for high repetition rate gas discharge lasers
US7180083B2 (en) 2005-06-27 2007-02-20 Cymer, Inc. EUV light source collector erosion mitigation
US7141806B1 (en) 2005-06-27 2006-11-28 Cymer, Inc. EUV light source collector erosion mitigation
US7653095B2 (en) * 2005-06-30 2010-01-26 Cymer, Inc. Active bandwidth control for a laser
US7394083B2 (en) 2005-07-08 2008-07-01 Cymer, Inc. Systems and methods for EUV light source metrology
US20070030876A1 (en) * 2005-08-05 2007-02-08 Levatter Jeffrey I Apparatus and method for purging and recharging excimer laser gases
US7317179B2 (en) 2005-10-28 2008-01-08 Cymer, Inc. Systems and methods to shape laser light as a homogeneous line beam for interaction with a film deposited on a substrate
US7679029B2 (en) 2005-10-28 2010-03-16 Cymer, Inc. Systems and methods to shape laser light as a line beam for interaction with a substrate having surface variations
US7746913B2 (en) * 2005-11-01 2010-06-29 Cymer, Inc. Laser system
US7453077B2 (en) 2005-11-05 2008-11-18 Cymer, Inc. EUV light source
US7852889B2 (en) 2006-02-17 2010-12-14 Cymer, Inc. Active spectral control of DUV light source
TW200903935A (en) * 2007-03-27 2009-01-16 Photomedex Method and apparatus for efficiently operating a gas discharge excimer laser
US7655925B2 (en) 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
US7812329B2 (en) 2007-12-14 2010-10-12 Cymer, Inc. System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
US8519366B2 (en) 2008-08-06 2013-08-27 Cymer, Inc. Debris protection system having a magnetic field for an EUV light source
US7720120B2 (en) * 2008-10-21 2010-05-18 Cymer, Inc. Method and apparatus for laser control in a two chamber gas discharge laser
US7756171B2 (en) * 2008-10-21 2010-07-13 Cymer, Inc. Method and apparatus for laser control in a two chamber gas discharge laser
US7751453B2 (en) * 2008-10-21 2010-07-06 Cymer, Inc. Method and apparatus for laser control in a two chamber gas discharge laser
JP5687488B2 (ja) 2010-02-22 2015-03-18 ギガフォトン株式会社 極端紫外光生成装置
JP6022837B2 (ja) 2011-10-25 2016-11-09 ギガフォトン株式会社 エキシマレーザ装置及びエキシマレーザシステム
US8837549B2 (en) 2011-11-23 2014-09-16 Ipg Microsystems Llc Continuous mass flow gas replenishment for gas lasing devices
WO2014003018A1 (ja) 2012-06-26 2014-01-03 ギガフォトン株式会社 レーザ装置の制御方法及びレーザ装置
WO2015103163A1 (en) * 2013-12-31 2015-07-09 Teledyne Instruments, Inc. Method and system for performing automatic gas refills for a gas laser
US9634455B1 (en) 2016-02-16 2017-04-25 Cymer, Llc Gas optimization in a gas discharge light source
WO2017195244A1 (ja) * 2016-05-09 2017-11-16 ギガフォトン株式会社 レーザ装置
US10234765B2 (en) 2017-06-05 2019-03-19 Coherent Lasersystems Gmbh & Co. Kg Energy controller for excimer-laser silicon crystallization
US12160080B2 (en) * 2019-01-07 2024-12-03 Strata Skin Sciences, Inc. Excimer laser system with long service intervals

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5142543A (en) * 1988-01-27 1992-08-25 Kabushiki Kaisha Komatsu Seisakusho Method and system for controlling narrow-band oscillation excimer laser
US6018537A (en) * 1997-07-18 2000-01-25 Cymer, Inc. Reliable, modular, production quality narrow-band high rep rate F2 laser
US5887014A (en) * 1997-08-20 1999-03-23 Cymer, Inc. Process for selecting operating range for narrow band excimer laser
WO1999019951A1 (en) * 1997-10-10 1999-04-22 Cymer, Inc. Narrow band excimer laser

Also Published As

Publication number Publication date
EP1075060A2 (de) 2001-02-07
TW479388B (en) 2002-03-11
DE60038418D1 (de) 2008-05-08
EP1075060A3 (de) 2003-11-05
US6151349A (en) 2000-11-21
KR20010030047A (ko) 2001-04-16
EP1075060B1 (de) 2008-03-26
KR100347426B1 (ko) 2002-08-03
JP3978308B2 (ja) 2007-09-19
DE60038657D1 (de) 2008-06-05
JP2001160644A (ja) 2001-06-12
DE60038418T2 (de) 2009-04-23
DE60038657T2 (de) 2009-05-14

Similar Documents

Publication Publication Date Title
ATE390742T1 (de) Automatisches fluorkonzentration-steuersystem für excimerlaser
EP1037339A3 (de) Besondes stabiler Excimer- oder molekularer Fluor-Laser
EP0770824A3 (de) Verfahren und Schaltung zur Regelung eines Gasbrenners
ATE393490T1 (de) Automatisches fluorkonzentration-steuersystem für excimerlaser
EP1574279A3 (de) Laserbearbeitungsvorrichtung
JPS6482682A (en) Semiconductor laser driver
WO1999024369A3 (en) Amperometric halogen control system
DK1154202T3 (da) Reguleringsindretning for en brænder
EP1205924A3 (de) Aufzeichnungsgerät zur Anwendung mit einem optischen Aufzeichnungsmedium, und Verfahren dafür
BR0304114A (pt) Sistema e método para determinação e emprego de utilização de consumìveis por soldadores a arco elétricos
EP0790681A3 (de) Externe Hochspannungsansteuerung für ein Lasersystem
EP0854003A4 (de) Laservorrichtung
BR0115599A (pt) Circuito de amplificador
EP1043760A4 (de) Apparat und methode zur kontrolle der beleuchtung für eine gepulste lichtquelle, verwendet in einer ausrichtevorrichtung
EP1091462A3 (de) ArF-Excimer-Laservorrichtung
FR2788839B1 (fr) Procede et dispositif de regulation d'un courant de combustible gazeux
ATE226766T1 (de) Gaslaser mit rechteckigem entladungsraum
WO1999019950A8 (en) Pulse energy control for excimer laser
AU742284B2 (en) Apparatus for minimizing the effects of laser intensity reduction at cold temperatures in ring laser gyros
WO2002080316A3 (en) Optical feedback system
ATE184431T1 (de) Verfahren und vorrichtung zur steuerung der leistungsaufnahme eines elektronischen gerätes
EP1124293A3 (de) Gaslaservorrichtung
JPH0250837B2 (de)
CA2058402A1 (en) Discharge excitation gas laser device
CA2198715A1 (en) Gas replenishment method and apparatus for excimer lasers

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties