ATE392013T1 - Wellenlängenempfindlicher photondetektor mit länglichen nanostrukturen - Google Patents

Wellenlängenempfindlicher photondetektor mit länglichen nanostrukturen

Info

Publication number
ATE392013T1
ATE392013T1 AT05077989T AT05077989T ATE392013T1 AT E392013 T1 ATE392013 T1 AT E392013T1 AT 05077989 T AT05077989 T AT 05077989T AT 05077989 T AT05077989 T AT 05077989T AT E392013 T1 ATE392013 T1 AT E392013T1
Authority
AT
Austria
Prior art keywords
elongate nanostructures
nanostructures
different
elongate
unit
Prior art date
Application number
AT05077989T
Other languages
English (en)
Inventor
Anne Verhulst
Wilfried Vandervorst
Original Assignee
Imec Inter Uni Micro Electr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE392013T1 publication Critical patent/ATE392013T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/953—Detector using nanostructure
    • Y10S977/954—Of radiant energy

Landscapes

  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
AT05077989T 2005-07-29 2005-12-27 Wellenlängenempfindlicher photondetektor mit länglichen nanostrukturen ATE392013T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70410805P 2005-07-29 2005-07-29

Publications (1)

Publication Number Publication Date
ATE392013T1 true ATE392013T1 (de) 2008-04-15

Family

ID=41124190

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05077989T ATE392013T1 (de) 2005-07-29 2005-12-27 Wellenlängenempfindlicher photondetektor mit länglichen nanostrukturen

Country Status (4)

Country Link
US (2) US7598482B1 (de)
EP (1) EP1748494B1 (de)
AT (1) ATE392013T1 (de)
DE (1) DE602005005985T2 (de)

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US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
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US9406709B2 (en) * 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
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JP5582744B2 (ja) * 2009-08-20 2014-09-03 日立造船株式会社 太陽電池およびその製造方法並びに太陽電池装置
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Also Published As

Publication number Publication date
US7598482B1 (en) 2009-10-06
DE602005005985D1 (de) 2008-05-21
EP1748494A1 (de) 2007-01-31
US20100171025A1 (en) 2010-07-08
US20090266974A1 (en) 2009-10-29
EP1748494B1 (de) 2008-04-09
US8232517B2 (en) 2012-07-31
DE602005005985T2 (de) 2009-05-28

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