ATE392013T1 - Wellenlängenempfindlicher photondetektor mit länglichen nanostrukturen - Google Patents

Wellenlängenempfindlicher photondetektor mit länglichen nanostrukturen

Info

Publication number
ATE392013T1
ATE392013T1 AT05077989T AT05077989T ATE392013T1 AT E392013 T1 ATE392013 T1 AT E392013T1 AT 05077989 T AT05077989 T AT 05077989T AT 05077989 T AT05077989 T AT 05077989T AT E392013 T1 ATE392013 T1 AT E392013T1
Authority
AT
Austria
Prior art keywords
elongate nanostructures
nanostructures
different
elongate
unit
Prior art date
Application number
AT05077989T
Other languages
English (en)
Inventor
Anne Verhulst
Wilfried Vandervorst
Original Assignee
Imec Inter Uni Micro Electr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE392013T1 publication Critical patent/ATE392013T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/953—Detector using nanostructure
    • Y10S977/954—Of radiant energy

Landscapes

  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
AT05077989T 2005-07-29 2005-12-27 Wellenlängenempfindlicher photondetektor mit länglichen nanostrukturen ATE392013T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70410805P 2005-07-29 2005-07-29

Publications (1)

Publication Number Publication Date
ATE392013T1 true ATE392013T1 (de) 2008-04-15

Family

ID=41124190

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05077989T ATE392013T1 (de) 2005-07-29 2005-12-27 Wellenlängenempfindlicher photondetektor mit länglichen nanostrukturen

Country Status (4)

Country Link
US (2) US7598482B1 (de)
EP (1) EP1748494B1 (de)
AT (1) ATE392013T1 (de)
DE (1) DE602005005985T2 (de)

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US20090188557A1 (en) * 2008-01-30 2009-07-30 Shih-Yuan Wang Photonic Device And Method Of Making Same Using Nanowire Bramble Layer
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US8045859B2 (en) * 2008-05-02 2011-10-25 The United States Of America As Represented By The Secretary Of The Navy High-speed underwater data transmission system and method
US8866065B2 (en) 2010-12-13 2014-10-21 Zena Technologies, Inc. Nanowire arrays comprising fluorescent nanowires
US8748799B2 (en) 2010-12-14 2014-06-10 Zena Technologies, Inc. Full color single pixel including doublet or quadruplet si nanowires for image sensors
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US8229255B2 (en) 2008-09-04 2012-07-24 Zena Technologies, Inc. Optical waveguides in image sensors
US9299866B2 (en) 2010-12-30 2016-03-29 Zena Technologies, Inc. Nanowire array based solar energy harvesting device
US8692301B2 (en) 2008-09-04 2014-04-08 Qunano Ab Nanostructured photodiode
US8274039B2 (en) * 2008-11-13 2012-09-25 Zena Technologies, Inc. Vertical waveguides with various functionality on integrated circuits
US9406709B2 (en) * 2010-06-22 2016-08-02 President And Fellows Of Harvard College Methods for fabricating and using nanowires
US8889455B2 (en) 2009-12-08 2014-11-18 Zena Technologies, Inc. Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor
US9478685B2 (en) 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US8507840B2 (en) 2010-12-21 2013-08-13 Zena Technologies, Inc. Vertically structured passive pixel arrays and methods for fabricating the same
US8890271B2 (en) 2010-06-30 2014-11-18 Zena Technologies, Inc. Silicon nitride light pipes for image sensors
US8269985B2 (en) 2009-05-26 2012-09-18 Zena Technologies, Inc. Determination of optimal diameters for nanowires
US8735797B2 (en) 2009-12-08 2014-05-27 Zena Technologies, Inc. Nanowire photo-detector grown on a back-side illuminated image sensor
US8299472B2 (en) 2009-12-08 2012-10-30 Young-June Yu Active pixel sensor with nanowire structured photodetectors
US8384007B2 (en) 2009-10-07 2013-02-26 Zena Technologies, Inc. Nano wire based passive pixel image sensor
US8546742B2 (en) 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8519379B2 (en) 2009-12-08 2013-08-27 Zena Technologies, Inc. Nanowire structured photodiode with a surrounding epitaxially grown P or N layer
US8835831B2 (en) 2010-06-22 2014-09-16 Zena Technologies, Inc. Polarized light detecting device and fabrication methods of the same
US9000353B2 (en) * 2010-06-22 2015-04-07 President And Fellows Of Harvard College Light absorption and filtering properties of vertically oriented semiconductor nano wires
US9082673B2 (en) 2009-10-05 2015-07-14 Zena Technologies, Inc. Passivated upstanding nanostructures and methods of making the same
US9343490B2 (en) 2013-08-09 2016-05-17 Zena Technologies, Inc. Nanowire structured color filter arrays and fabrication method of the same
US9515218B2 (en) 2008-09-04 2016-12-06 Zena Technologies, Inc. Vertical pillar structured photovoltaic devices with mirrors and optical claddings
DE112009002564T5 (de) * 2008-10-20 2011-09-29 Hewlett-Packard Development Company, L.P. Nanodraht-Bolometer-Photodetektor
WO2010131241A2 (en) * 2009-05-13 2010-11-18 Yevgeni Preezant Improved photo-voltaic cell structure
JP5582744B2 (ja) * 2009-08-20 2014-09-03 日立造船株式会社 太陽電池およびその製造方法並びに太陽電池装置
WO2011156507A1 (en) 2010-06-08 2011-12-15 Edward Hartley Sargent Stable, sensitive photodetectors and image sensors including circuits, processes, and materials for enhanced imaging performance
US10501316B2 (en) 2010-11-15 2019-12-10 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Nanowire arrays for trace vapor preconcentration
TWI585032B (zh) 2012-06-28 2017-06-01 無限科技全球公司 用於製造奈米結構的方法
KR101845139B1 (ko) * 2015-12-29 2018-05-18 전자부품연구원 실리콘 나노와이어를 이용한 애벌런치 포토다이오드 및 그를 이용한 실리콘 나노와이어 광증배관
US10340459B2 (en) 2016-03-22 2019-07-02 International Business Machines Corporation Terahertz detection and spectroscopy with films of homogeneous carbon nanotubes
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US7459312B2 (en) * 2001-04-18 2008-12-02 The Board Of Trustees Of The Leland Stanford Junior University Photodesorption in carbon nanotubes
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Also Published As

Publication number Publication date
US8232517B2 (en) 2012-07-31
US20100171025A1 (en) 2010-07-08
DE602005005985D1 (de) 2008-05-21
EP1748494B1 (de) 2008-04-09
DE602005005985T2 (de) 2009-05-28
EP1748494A1 (de) 2007-01-31
US20090266974A1 (en) 2009-10-29
US7598482B1 (en) 2009-10-06

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