ATE392716T1 - Halbleiterspeicherbauelement mit schwebendem körper und herstellungsverfahren desselben - Google Patents

Halbleiterspeicherbauelement mit schwebendem körper und herstellungsverfahren desselben

Info

Publication number
ATE392716T1
ATE392716T1 AT05447039T AT05447039T ATE392716T1 AT E392716 T1 ATE392716 T1 AT E392716T1 AT 05447039 T AT05447039 T AT 05447039T AT 05447039 T AT05447039 T AT 05447039T AT E392716 T1 ATE392716 T1 AT E392716T1
Authority
AT
Austria
Prior art keywords
charge
production
semiconductor memory
floating body
memory component
Prior art date
Application number
AT05447039T
Other languages
English (en)
Inventor
Luc Haspeslagh
Maarten Rosmeulen
Original Assignee
Imec Inter Uni Micro Electr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE392716T1 publication Critical patent/ATE392716T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/026—Manufacture or treatment of FETs having insulated gates [IGFET] having laterally-coplanar source and drain regions, a gate at the sides of the bulk channel, and both horizontal and vertical current flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
AT05447039T 2005-02-21 2005-02-21 Halbleiterspeicherbauelement mit schwebendem körper und herstellungsverfahren desselben ATE392716T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05447039A EP1693898B1 (de) 2005-02-21 2005-02-21 Halbleiterspeicherbauelement mit schwebendem Körper und Herstellungsverfahren desselben

Publications (1)

Publication Number Publication Date
ATE392716T1 true ATE392716T1 (de) 2008-05-15

Family

ID=34978803

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05447039T ATE392716T1 (de) 2005-02-21 2005-02-21 Halbleiterspeicherbauelement mit schwebendem körper und herstellungsverfahren desselben

Country Status (3)

Country Link
EP (1) EP1693898B1 (de)
AT (1) ATE392716T1 (de)
DE (1) DE602005006093T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7348642B2 (en) * 2005-08-03 2008-03-25 International Business Machines Corporation Fin-type field effect transistor
DE102008016439A1 (de) * 2008-03-31 2009-10-01 Advanced Micro Devices, Inc., Sunnyvale SOI-Transistor mit potentialfreiem Körper für die Informationsspeicherung mit asymmetrischen Drain/Source-Gebieten
WO2019066791A1 (en) * 2017-09-27 2019-04-04 Intel Corporation MULTI-GRID THIN FILM TRANSISTOR MEMORY

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10204871A1 (de) * 2002-02-06 2003-08-21 Infineon Technologies Ag Kondensatorlose 1-Transistor-DRAM-Zelle und Herstellungsverfahren
DE10248722A1 (de) * 2002-10-18 2004-05-06 Infineon Technologies Ag Integrierte Schaltungsanordnung mit Kondensator und Herstellungsverfahren
US7335934B2 (en) * 2003-07-22 2008-02-26 Innovative Silicon S.A. Integrated circuit device, and method of fabricating same

Also Published As

Publication number Publication date
DE602005006093T2 (de) 2009-05-20
EP1693898A1 (de) 2006-08-23
DE602005006093D1 (de) 2008-05-29
EP1693898B1 (de) 2008-04-16

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Legal Events

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