ATE394818T1 - Verbesserungen optischer halbleitervorrichtungen mit vertikalem resonator - Google Patents
Verbesserungen optischer halbleitervorrichtungen mit vertikalem resonatorInfo
- Publication number
- ATE394818T1 ATE394818T1 AT04722906T AT04722906T ATE394818T1 AT E394818 T1 ATE394818 T1 AT E394818T1 AT 04722906 T AT04722906 T AT 04722906T AT 04722906 T AT04722906 T AT 04722906T AT E394818 T1 ATE394818 T1 AT E394818T1
- Authority
- AT
- Austria
- Prior art keywords
- light
- semiconductor devices
- optical semiconductor
- pump
- vertical resonator
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000006096 absorbing agent Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094084—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light with pump light recycling, i.e. with reinjection of the unused pump light, e.g. by reflectors or circulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0306798A GB2399941A (en) | 2003-03-24 | 2003-03-24 | Vertical cavity semiconductor optical devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE394818T1 true ATE394818T1 (de) | 2008-05-15 |
Family
ID=9955462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04722906T ATE394818T1 (de) | 2003-03-24 | 2004-03-24 | Verbesserungen optischer halbleitervorrichtungen mit vertikalem resonator |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20070274361A1 (de) |
| EP (1) | EP1606863B1 (de) |
| AT (1) | ATE394818T1 (de) |
| DE (1) | DE602004013562D1 (de) |
| GB (1) | GB2399941A (de) |
| WO (1) | WO2004086577A2 (de) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060029112A1 (en) * | 2004-03-31 | 2006-02-09 | Young Ian A | Surface emitting laser with an integrated absorber |
| KR101015499B1 (ko) * | 2004-06-19 | 2011-02-16 | 삼성전자주식회사 | 복수의 파장을 발생시키는 반도체 레이저 소자 및 상기반도체 레이저 소자용 레이저 펌핑부 |
| DE602005001810T2 (de) * | 2004-06-19 | 2008-04-17 | Samsung Electronics Co., Ltd., Suwon | Mehrwellenlängenlasersystem mit externem Resonator |
| KR100668329B1 (ko) * | 2005-02-16 | 2007-01-12 | 삼성전자주식회사 | 변조기 내장형 광펌핑 반도체 레이저 장치 |
| FR2892196B1 (fr) * | 2005-10-18 | 2008-06-20 | Genewave Soc Par Actions Simpl | Procede de fabrication d'un biocapteur a detection integree |
| KR20070052059A (ko) * | 2005-11-16 | 2007-05-21 | 삼성전자주식회사 | 펌프 빔의 재활용이 가능한 외부 공진기형 면발광 레이저 |
| DE102005058900A1 (de) * | 2005-12-09 | 2007-06-14 | Osram Opto Semiconductors Gmbh | Vertikal emittierender, optisch gepumpter Halbleiterlaser mit externem Resonator |
| JP2007173304A (ja) * | 2005-12-19 | 2007-07-05 | Sony Corp | 面発光型半導体レーザ |
| US20070290191A1 (en) * | 2006-06-16 | 2007-12-20 | Vitaly Shuchukin | Resonant cavity optoelectronic device with suppressed parasitic modes |
| DE102007040369A1 (de) * | 2007-08-17 | 2009-02-19 | Landesstiftung Baden-Württemberg gGmbH | Laserverstärkersystem |
| DE102008009412B4 (de) * | 2008-02-15 | 2010-07-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Infrarot-Halbleiterlaser |
| DE102008017268A1 (de) * | 2008-03-03 | 2009-09-10 | Osram Opto Semiconductors Gmbh | Oberflächenemittierender Halbleiterlaser mit monolithisch integriertem Pumplaser |
| DE102008038804A1 (de) * | 2008-08-13 | 2010-02-18 | Osram Opto Semiconductors Gmbh | Oberflächenemittierender Halbleiterlaserchip und Laseranordnung mit einem oberflächenemittierenden Halbleiterchip |
| US9124062B2 (en) * | 2012-03-22 | 2015-09-01 | Palo Alto Research Center Incorporated | Optically pumped surface emitting lasers incorporating high reflectivity/bandwidth limited reflector |
| US9112331B2 (en) | 2012-03-22 | 2015-08-18 | Palo Alto Research Center Incorporated | Surface emitting laser incorporating third reflector |
| US9112332B2 (en) | 2012-06-14 | 2015-08-18 | Palo Alto Research Center Incorporated | Electron beam pumped vertical cavity surface emitting laser |
| US8934514B2 (en) * | 2012-12-13 | 2015-01-13 | Oulun Yliopisto | Laser |
| EP2963744B1 (de) * | 2014-06-30 | 2019-04-03 | Canon Kabushiki Kaisha | Oberflächenemissionslaser und vorrichtung zur optischen kohärenztomografie damit |
| US9853417B2 (en) | 2014-09-22 | 2017-12-26 | Arizona Board Of Regents On Behalf Of The University Of Arizona | Nonequilibrium pulsed femtosecond semiconductor disk laser |
| US9466948B2 (en) * | 2014-09-22 | 2016-10-11 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Nonequilibrium pulsed femtosecond semiconductor disk laser |
| CN104882783B (zh) * | 2015-04-16 | 2017-10-17 | 山西大学 | 一种实现双向光学二极管的方法及装置 |
| US10148059B2 (en) * | 2016-06-23 | 2018-12-04 | Theodore John Podgorski | Gain mirror for solid state ring laser rotation sensors |
| US10739137B2 (en) | 2018-08-17 | 2020-08-11 | Honeywell International Inc. | Solid state ring laser gyroscope using rare-earth gain dopants in glassy hosts |
| CN110265874B (zh) * | 2019-06-26 | 2020-09-29 | 长春中科长光时空光电技术有限公司 | 一种垂直腔半导体光放大器,光放大系统及制备方法 |
| US20220344892A1 (en) * | 2019-11-28 | 2022-10-27 | Sony Group Corporation | Laser device, method of manufacturing laser device, laser apparatus, and laser amplifying device |
| CN114336283B (zh) * | 2021-12-30 | 2023-05-02 | 北京工业大学 | 一种光模式调制光子级联激光器及制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5052016A (en) * | 1990-05-18 | 1991-09-24 | University Of New Mexico | Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser |
| US5461637A (en) * | 1994-03-16 | 1995-10-24 | Micracor, Inc. | High brightness, vertical cavity semiconductor lasers |
| US5513203A (en) * | 1995-04-05 | 1996-04-30 | At&T Corp. | Surface emitting laser having improved pumping efficiency |
| US6327293B1 (en) * | 1998-08-12 | 2001-12-04 | Coherent, Inc. | Optically-pumped external-mirror vertical-cavity semiconductor-laser |
| US6016214A (en) * | 1998-09-11 | 2000-01-18 | Northrop Grumman Corporation | Quadruple grating period PPLN optical parametric oscillator difference frequency generator with common doubly resonant cavity |
| US6101023A (en) * | 1998-09-11 | 2000-08-08 | Northrop Grumman Corporation | Line periodically poled LiNbO3 (PPLN) optical parametric oscillator (OPO-DFG-OPO) with common doubly resonant cavity |
| US6735234B1 (en) * | 2000-02-11 | 2004-05-11 | Giga Tera Ag | Passively mode-locked optically pumped semiconductor external-cavity surface-emitting laser |
| GB2369929A (en) * | 2000-12-08 | 2002-06-12 | Univ Southampton | Semiconductor laser device |
| US6434180B1 (en) * | 2000-12-19 | 2002-08-13 | Lucent Technologies Inc. | Vertical cavity surface emitting laser (VCSEL) |
| US6628695B1 (en) * | 2002-03-07 | 2003-09-30 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithically integrated mode-locked vertical cavity surface emitting laser (VCSEL) |
| US6859481B2 (en) * | 2002-07-16 | 2005-02-22 | Applied Optoelectronics, Inc. | Optically-pumped multiple-quantum well active region with improved distribution of optical pumping power |
-
2003
- 2003-03-24 GB GB0306798A patent/GB2399941A/en not_active Withdrawn
-
2004
- 2004-03-24 DE DE602004013562T patent/DE602004013562D1/de not_active Expired - Lifetime
- 2004-03-24 US US10/550,843 patent/US20070274361A1/en not_active Abandoned
- 2004-03-24 EP EP04722906A patent/EP1606863B1/de not_active Expired - Lifetime
- 2004-03-24 AT AT04722906T patent/ATE394818T1/de not_active IP Right Cessation
- 2004-03-24 WO PCT/GB2004/001233 patent/WO2004086577A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004086577A2 (en) | 2004-10-07 |
| US20070274361A1 (en) | 2007-11-29 |
| WO2004086577A3 (en) | 2005-02-17 |
| EP1606863A2 (de) | 2005-12-21 |
| DE602004013562D1 (de) | 2008-06-19 |
| GB0306798D0 (en) | 2003-04-30 |
| GB2399941A (en) | 2004-09-29 |
| EP1606863B1 (de) | 2008-05-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |