ATE396496T1 - Hocheffiziente kondensatoranordnungen mit verbesserten anpassungseigenschaften - Google Patents

Hocheffiziente kondensatoranordnungen mit verbesserten anpassungseigenschaften

Info

Publication number
ATE396496T1
ATE396496T1 AT01968869T AT01968869T ATE396496T1 AT E396496 T1 ATE396496 T1 AT E396496T1 AT 01968869 T AT01968869 T AT 01968869T AT 01968869 T AT01968869 T AT 01968869T AT E396496 T1 ATE396496 T1 AT E396496T1
Authority
AT
Austria
Prior art keywords
vertical plates
vertical
capacitor structure
terminal
vias
Prior art date
Application number
AT01968869T
Other languages
English (en)
Inventor
Seyed-Ali Hajimiri
Roberto Aparicio
Original Assignee
California Inst Of Techn
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Inst Of Techn filed Critical California Inst Of Techn
Application granted granted Critical
Publication of ATE396496T1 publication Critical patent/ATE396496T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Discharge Lamp (AREA)
  • Ceramic Capacitors (AREA)
AT01968869T 2000-09-14 2001-09-14 Hocheffiziente kondensatoranordnungen mit verbesserten anpassungseigenschaften ATE396496T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23265100P 2000-09-14 2000-09-14
US09/927,761 US6690570B2 (en) 2000-09-14 2001-08-09 Highly efficient capacitor structures with enhanced matching properties

Publications (1)

Publication Number Publication Date
ATE396496T1 true ATE396496T1 (de) 2008-06-15

Family

ID=26926203

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01968869T ATE396496T1 (de) 2000-09-14 2001-09-14 Hocheffiziente kondensatoranordnungen mit verbesserten anpassungseigenschaften

Country Status (9)

Country Link
US (2) US6690570B2 (de)
EP (1) EP1319245B1 (de)
JP (1) JP2004511899A (de)
KR (1) KR100864122B1 (de)
CN (1) CN1459123A (de)
AT (1) ATE396496T1 (de)
AU (1) AU2001289080A1 (de)
DE (1) DE60134159D1 (de)
WO (1) WO2002027770A2 (de)

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Also Published As

Publication number Publication date
EP1319245A2 (de) 2003-06-18
DE60134159D1 (de) 2008-07-03
US20020093780A1 (en) 2002-07-18
KR100864122B1 (ko) 2008-10-16
CN1459123A (zh) 2003-11-26
US6690570B2 (en) 2004-02-10
US20030206389A1 (en) 2003-11-06
AU2001289080A1 (en) 2002-04-08
WO2002027770A3 (en) 2003-02-27
WO2002027770A2 (en) 2002-04-04
JP2004511899A (ja) 2004-04-15
KR20030036792A (ko) 2003-05-09
EP1319245B1 (de) 2008-05-21

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Legal Events

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