ATE398337T1 - Cmos bildaufnehmer - Google Patents

Cmos bildaufnehmer

Info

Publication number
ATE398337T1
ATE398337T1 AT02253569T AT02253569T ATE398337T1 AT E398337 T1 ATE398337 T1 AT E398337T1 AT 02253569 T AT02253569 T AT 02253569T AT 02253569 T AT02253569 T AT 02253569T AT E398337 T1 ATE398337 T1 AT E398337T1
Authority
AT
Austria
Prior art keywords
cmos image
layer
image recorders
signal processing
light receiving
Prior art date
Application number
AT02253569T
Other languages
English (en)
Inventor
Susumu Yamaguchi
Kazuo Tansho
Yasushi Hoshino
Masafumi Mizukami
Oh-Bong Kwon
Original Assignee
Konica Minolta Opto Inc
Magna Chip Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Opto Inc, Magna Chip Semiconductor Ltd filed Critical Konica Minolta Opto Inc
Application granted granted Critical
Publication of ATE398337T1 publication Critical patent/ATE398337T1/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/022—Mountings, adjusting means, or light-tight connections, for optical elements for lenses lens and mount having complementary engagement means, e.g. screw/thread
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Steroid Compounds (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
AT02253569T 2001-05-31 2002-05-21 Cmos bildaufnehmer ATE398337T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001164020 2001-05-31

Publications (1)

Publication Number Publication Date
ATE398337T1 true ATE398337T1 (de) 2008-07-15

Family

ID=19006887

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02253569T ATE398337T1 (de) 2001-05-31 2002-05-21 Cmos bildaufnehmer

Country Status (7)

Country Link
US (1) US6727487B2 (de)
EP (1) EP1263055B1 (de)
KR (1) KR100596104B1 (de)
CN (1) CN1226790C (de)
AT (1) ATE398337T1 (de)
DE (1) DE60227027D1 (de)
TW (1) TW540157B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323676B2 (en) * 2001-09-11 2008-01-29 Lumileds Lighting Us, Llc. Color photosensor with color filters and subtraction unit
US7662094B2 (en) 2002-05-14 2010-02-16 Given Imaging Ltd. Optical head assembly with dome, and device for use thereof
US6946715B2 (en) * 2003-02-19 2005-09-20 Micron Technology, Inc. CMOS image sensor and method of fabrication
US20040061799A1 (en) * 2002-09-27 2004-04-01 Konica Corporation Image pickup device and portable terminal equipped therewith
WO2005020328A1 (ja) * 2003-08-22 2005-03-03 Konica Minolta Opto, Inc. 固体撮像装置及び該固体撮像装置を備えた撮像装置並びに固体撮像装置のマイクロレンズアレイ製造方法
FR2860644B1 (fr) * 2003-10-06 2006-03-03 St Microelectronics Sa Composant, plaque et boitier semi-conducteur a capteur optique
US7821564B2 (en) * 2003-12-30 2010-10-26 Given Imaging Ltd. Assembly for aligning an optical system
US7372497B2 (en) * 2004-04-28 2008-05-13 Taiwan Semiconductor Manufacturing Company Effective method to improve sub-micron color filter sensitivity
CN1969539A (zh) * 2004-05-04 2007-05-23 德塞拉股份有限公司 紧凑透镜塔形组件
US20060109366A1 (en) * 2004-05-04 2006-05-25 Tessera, Inc. Compact lens turret assembly
JP2005347416A (ja) * 2004-06-01 2005-12-15 Sharp Corp 固体撮像装置、半導体ウエハ及びカメラモジュール
KR100629679B1 (ko) 2004-07-01 2006-09-29 삼성전자주식회사 열전 냉각 소자를 갖는 반도체 칩 패키지
DE202004011854U1 (de) * 2004-07-28 2004-11-04 Microelectronic Packaging Dresden Gmbh Image-Modul
US7645635B2 (en) * 2004-08-16 2010-01-12 Micron Technology, Inc. Frame structure and semiconductor attach process for use therewith for fabrication of image sensor packages and the like, and resulting packages
US9320417B2 (en) 2005-12-29 2016-04-26 Given Imaging Ltd. In-vivo optical imaging device with backscatter blocking
KR100868630B1 (ko) * 2006-12-11 2008-11-13 동부일렉트로닉스 주식회사 마이크로 렌즈 형성용 패턴 마스크, 이미지 센서 및 이의제조 방법
US20090283665A1 (en) * 2008-05-13 2009-11-19 Eastman Kodak Company Image sensor with an aligned optical assembly
JP5553707B2 (ja) * 2009-08-21 2014-07-16 株式会社半導体エネルギー研究所 光検出装置
US8461567B2 (en) * 2010-06-24 2013-06-11 Nokia Corporation Apparatus and method for sensing photons
JP2014123014A (ja) * 2012-12-21 2014-07-03 Casio Comput Co Ltd 光源装置、プロジェクタ
US9917991B2 (en) * 2014-10-24 2018-03-13 Apple Inc. Camera actuator
TWI613478B (zh) * 2016-09-12 2018-02-01 台睿精工股份有限公司 單鏡頭機械零傾角的調整方法
CN109115250A (zh) * 2018-08-08 2019-01-01 珠海格力电器股份有限公司 感光器件的阵列结构和光电编码器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5321249A (en) * 1991-10-31 1994-06-14 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device and method of manufacturing the same
KR950002410A (ko) * 1993-06-30 1995-01-04 김광호 고체 촬상 장치
JPH10270672A (ja) * 1997-03-25 1998-10-09 Sony Corp 固体撮像素子
EP0948059A1 (de) * 1998-02-05 1999-10-06 Asulab S.A. Positionierungsmittel in einem mikroelektronischen Bauelement und Bildsensor mit Verwendung dieses Bauelements
KR20000050478A (ko) * 1999-01-11 2000-08-05 윤종용 고체 촬상 소자 이미지 센서 모듈 및 그 조립방법
US6137634A (en) * 1999-02-01 2000-10-24 Intel Corporation Microlens array
KR100359768B1 (ko) * 1999-03-18 2002-11-07 주식회사 하이닉스반도체 고체 촬상 소자 및 그 제조방법
FR2798226B1 (fr) * 1999-09-02 2002-04-05 St Microelectronics Sa Procede de mise en boitier d'une puce de semi-conducteur contenant des capteurs et boitier obtenu
US6171885B1 (en) * 1999-10-12 2001-01-09 Taiwan Semiconductor Manufacturing Company High efficiency color filter process for semiconductor array imaging devices
JP3840058B2 (ja) * 2000-04-07 2006-11-01 キヤノン株式会社 マイクロレンズ、固体撮像装置及びそれらの製造方法
US6395576B1 (en) * 2000-06-14 2002-05-28 Taiwan Semiconductor Manufacturing Company High efficiency color filter process to improve color balance in semiconductor array imaging devices
TW523924B (en) * 2001-01-12 2003-03-11 Konishiroku Photo Ind Image pickup device and image pickup lens

Also Published As

Publication number Publication date
EP1263055A3 (de) 2005-03-30
KR100596104B1 (ko) 2006-07-05
CN1389928A (zh) 2003-01-08
TW540157B (en) 2003-07-01
EP1263055B1 (de) 2008-06-11
KR20020091792A (ko) 2002-12-06
US20020195546A1 (en) 2002-12-26
DE60227027D1 (de) 2008-07-24
US6727487B2 (en) 2004-04-27
EP1263055A2 (de) 2002-12-04
CN1226790C (zh) 2005-11-09

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Legal Events

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