ATE399329T1 - Verfahren und gerät zum messen der lebensdauer von ladungsträgern in einem halbleiterwafer - Google Patents

Verfahren und gerät zum messen der lebensdauer von ladungsträgern in einem halbleiterwafer

Info

Publication number
ATE399329T1
ATE399329T1 AT03078341T AT03078341T ATE399329T1 AT E399329 T1 ATE399329 T1 AT E399329T1 AT 03078341 T AT03078341 T AT 03078341T AT 03078341 T AT03078341 T AT 03078341T AT E399329 T1 ATE399329 T1 AT E399329T1
Authority
AT
Austria
Prior art keywords
semiconductor wafer
voltage
lifetime
measuring
charge carriers
Prior art date
Application number
AT03078341T
Other languages
English (en)
Inventor
William H Howland
Original Assignee
Solid State Measurements Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solid State Measurements Inc filed Critical Solid State Measurements Inc
Application granted granted Critical
Publication of ATE399329T1 publication Critical patent/ATE399329T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
AT03078341T 2002-10-22 2003-10-22 Verfahren und gerät zum messen der lebensdauer von ladungsträgern in einem halbleiterwafer ATE399329T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/277,689 US6836139B2 (en) 2002-10-22 2002-10-22 Method and apparatus for determining defect and impurity concentration in semiconducting material of a semiconductor wafer

Publications (1)

Publication Number Publication Date
ATE399329T1 true ATE399329T1 (de) 2008-07-15

Family

ID=32069312

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03078341T ATE399329T1 (de) 2002-10-22 2003-10-22 Verfahren und gerät zum messen der lebensdauer von ladungsträgern in einem halbleiterwafer

Country Status (6)

Country Link
US (1) US6836139B2 (de)
EP (1) EP1413892B1 (de)
JP (1) JP2004146831A (de)
AT (1) ATE399329T1 (de)
DE (1) DE60321761D1 (de)
TW (1) TWI296329B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003279929A1 (en) * 2003-01-28 2004-08-30 The Government Of The United States Of America As Represented By The Secretary Of Commerce Light-induced capacitance spectroscopy and method for obtaining carrier lifetime with micron/nanometer scale
US7023231B2 (en) * 2004-05-14 2006-04-04 Solid State Measurements, Inc. Work function controlled probe for measuring properties of a semiconductor wafer and method of use thereof
US7037734B2 (en) * 2004-06-23 2006-05-02 Solid State Measurements, Inc. Method and apparatus for determining generation lifetime of product semiconductor wafers
DE102006013588A1 (de) * 2006-03-22 2007-09-27 Fachhochschule Deggendorf Zweidimensinale Profilierung von Dotierungsprofilen einer Materialprobe mittels Rastersondenmikroskopie
WO2008052237A1 (en) * 2006-10-30 2008-05-08 Newsouth Innovations Pty Limited Methods and systems of producing self-consistently a calibration constant for excess charge carrier lifetime
KR101913311B1 (ko) 2012-04-09 2019-01-15 삼성디스플레이 주식회사 실리콘 박막 측정 방법, 실리콘 박막 결함 검출 방법, 및 실리콘 박막 결함 검출 장치
KR101483716B1 (ko) * 2013-12-27 2015-01-16 국민대학교산학협력단 광 응답 특성을 이용한 유기 박막 트랜지스터의 과잉 캐리어 수명 추출 방법 및 그 장치
TWI555326B (zh) * 2015-05-29 2016-10-21 Lehighton Electronics Inc 非接觸式感測光伏半導體的最大開路電壓的裝置及方法
JP7643000B2 (ja) * 2019-09-24 2025-03-11 東レ株式会社 静電容量－電圧特性測定方法および静電容量－電圧特性測定装置
CN111398774B (zh) * 2020-03-18 2022-02-15 西安奕斯伟材料科技有限公司 硅片少子寿命的测试方法及装置
RU2750427C1 (ru) * 2020-10-20 2021-06-28 Федеральное государственное бюджетное образовательное учреждение высшего образования "Тверской государственный университет" Способ определения удельного электросопротивления полупроводников с помощью инфракрасной оптики
US11940489B2 (en) * 2021-10-15 2024-03-26 Infineon Technologies Ag Semiconductor device having an optical device degradation sensor
US20240142512A1 (en) * 2022-10-31 2024-05-02 Texas Instruments Incorporated Semiconductor device testing

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168212A (en) 1974-05-16 1979-09-18 The Post Office Determining semiconductor characteristic
JPS59141238A (ja) 1983-02-01 1984-08-13 Hitachi Ltd キヤリア寿命測定装置
JPH0252342U (de) * 1988-09-30 1990-04-16
US5065103A (en) * 1990-03-27 1991-11-12 International Business Machines Corporation Scanning capacitance - voltage microscopy
US5406214A (en) 1990-12-17 1995-04-11 Semilab Felvezeto Fizikai Lab, Rt Method and apparatus for measuring minority carrier lifetime in semiconductor materials
JPH06151538A (ja) * 1992-02-03 1994-05-31 Leo Giken:Kk 半導体ウエハの評価方法及びその装置
US5508610A (en) * 1992-12-03 1996-04-16 Georgia Tech Research Corporation Electrical conductivity tester and methods thereof for accurately measuring time-varying and steady state conductivity using phase shift detection
US5477158A (en) 1993-10-04 1995-12-19 Loral Vought Systems Corporation Compact noncontact excess carrier lifetime characterization apparatus
US5453703A (en) 1993-11-29 1995-09-26 Semitest Inc. Method for determining the minority carrier surface recombination lifetime constant (ts of a specimen of semiconductor material
US5500607A (en) * 1993-12-22 1996-03-19 International Business Machines Corporation Probe-oxide-semiconductor method and apparatus for measuring oxide charge on a semiconductor wafer
CA2126481C (en) * 1994-06-22 2001-03-27 Andreas Mandelis Non-contact photothermal method for measuring thermal diffusivity and electronic defect properties of solids
DE4432294A1 (de) 1994-09-12 1996-03-14 Telefunken Microelectron Verfahren zur Reduzierung der Oberflächenrekombinationsgeschwindigkeit in Silizium
US5663657A (en) 1994-09-26 1997-09-02 University Of South Florida Determining long minority carrier diffusion lengths
US5661408A (en) 1995-03-01 1997-08-26 Qc Solutions, Inc. Real-time in-line testing of semiconductor wafers
TW341664B (en) * 1995-05-12 1998-10-01 Ibm Photovoltaic oxide charge measurement probe technique
US6008906A (en) 1995-08-25 1999-12-28 Brown University Research Foundation Optical method for the characterization of the electrical properties of semiconductors and insulating films
US6011404A (en) 1997-07-03 2000-01-04 Lucent Technologies Inc. System and method for determining near--surface lifetimes and the tunneling field of a dielectric in a semiconductor
US5977788A (en) 1997-07-11 1999-11-02 Lagowski; Jacek Elevated temperature measurement of the minority carrier lifetime in the depletion layer of a semiconductor wafer
DE69738129D1 (de) 1997-07-15 2007-10-25 St Microelectronics Srl Bestimmung der Dicke der Blosszone in einer Siliziumscheibe
JP3568741B2 (ja) * 1997-07-31 2004-09-22 株式会社東芝 半導体評価装置および半導体製造システム
US6005400A (en) * 1997-08-22 1999-12-21 Lockheed Martin Energy Research Corporation High resolution three-dimensional doping profiler
US6275060B1 (en) 1997-09-02 2001-08-14 Midwest Research Institute Apparatus and method for measuring minority carrier lifetimes in semiconductor materials
US6369603B1 (en) 1997-09-02 2002-04-09 Midwest Research Institute Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials
JPH11186350A (ja) * 1997-12-16 1999-07-09 Dainippon Screen Mfg Co Ltd 半導体の少数キャリアの再結合ライフタイム測定方法
US6185991B1 (en) * 1998-02-17 2001-02-13 Psia Corporation Method and apparatus for measuring mechanical and electrical characteristics of a surface using electrostatic force modulation microscopy which operates in contact mode
US6346821B1 (en) 1998-03-27 2002-02-12 Infineon Technologies Ag Method for nondestructive measurement of minority carrier diffusion length and minority carrier lifetime in semiconductor devices
US6049220A (en) * 1998-06-10 2000-04-11 Boxer Cross Incorporated Apparatus and method for evaluating a wafer of semiconductor material
JP3235573B2 (ja) 1998-11-05 2001-12-04 日本電気株式会社 半導体装置の試験システム
US6150175A (en) 1998-12-15 2000-11-21 Lsi Logic Corporation Copper contamination control of in-line probe instruments
US6323951B1 (en) 1999-03-22 2001-11-27 Boxer Cross Incorporated Apparatus and method for determining the active dopant profile in a semiconductor wafer
DE19915051C2 (de) * 1999-04-01 2002-09-19 Zae Bayern Verfahren und Vorrichtung zur ortsaufgelösten Charakterisierung elektronischer Eigenschaften von Halbleitermaterialien
WO2002077654A1 (en) * 2001-03-23 2002-10-03 Solid State Measurements, Inc. Method of detecting carrier dose of a semiconductor wafer

Also Published As

Publication number Publication date
DE60321761D1 (de) 2008-08-07
JP2004146831A (ja) 2004-05-20
EP1413892A2 (de) 2004-04-28
TWI296329B (en) 2008-05-01
US6836139B2 (en) 2004-12-28
US20040075460A1 (en) 2004-04-22
EP1413892A3 (de) 2005-01-12
TW200413735A (en) 2004-08-01
EP1413892B1 (de) 2008-06-25

Similar Documents

Publication Publication Date Title
ATE399329T1 (de) Verfahren und gerät zum messen der lebensdauer von ladungsträgern in einem halbleiterwafer
DE602005009603D1 (de) Funktionssteuerbare Prüfnadel zur Messung von Halbleiterwafern und Benutzungsverfahren
US6538462B1 (en) Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge
US4758786A (en) Method of analyzing semiconductor systems
US6191605B1 (en) Contactless method for measuring total charge of an insulating layer on a substrate using corona charge
DE60215090D1 (de) Verfahren und Vorrichtung zum Testen von Halbleiterwafern
ATE333652T1 (de) Nicht-invasive elektrische messung von halbleiterscheiben
JPH07302823A (ja) 半導体材料から成る試料の少数キャリアの表面再結合の寿命定数の決定方法
US9034667B2 (en) Apparatus and method for endpoint detection during electronic sample preparation
ES8500511A1 (es) Un dispositivo para medir el tiempo de vida de los portadores en obleas semiconductoras
US5444389A (en) Method and apparatus for measuring lifetime of minority carriers in semiconductor
JPH0536806A (ja) 静電チヤツクの過渡特性評価装置及び方法
JP3281164B2 (ja) Ｉｃのインサーキットテスタによる足浮き検出方法
KR100416962B1 (ko) 비접촉식 전압감지장치
ATE484754T1 (de) Hochgeschwindigkeitsverfahren zur messung der schwellenspannung und der flächendotierung
SU1629931A1 (ru) Способ определени параметров энергетических уровней в полупроводниках и гетероструктурах
JPH09321107A (ja) 半導体の層厚測定装置
RU2001130137A (ru) Способ обнаружения дефектов асфальтобетонного покрытия
SU1465819A1 (ru) Способ определени посто нной времени релаксации зар дов в диэлектрической жидкости
SU1377787A1 (ru) Устройство дл измерени ЭДС Холла в области пространственного зар да
JP2012021785A (ja) 検査方法及びこれを実施するために用いる検査装置
JPH1019952A (ja) 電荷量測定方法
SU1276920A1 (ru) Устройство дл измерени интенсивности световых потоков
RU2275623C1 (ru) Устройство для определения стабильности бурового раствора на углеводородной основе
SU1416903A1 (ru) Способ определени профил зар да в диэлектрике

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties