ATE399336T1 - Druckreferenzvorlage zur mehrschicht- oder mehrstruktur-registration und verfahren dafür - Google Patents

Druckreferenzvorlage zur mehrschicht- oder mehrstruktur-registration und verfahren dafür

Info

Publication number
ATE399336T1
ATE399336T1 AT05804583T AT05804583T ATE399336T1 AT E399336 T1 ATE399336 T1 AT E399336T1 AT 05804583 T AT05804583 T AT 05804583T AT 05804583 T AT05804583 T AT 05804583T AT E399336 T1 ATE399336 T1 AT E399336T1
Authority
AT
Austria
Prior art keywords
reference template
layer
print reference
structure registration
registration print
Prior art date
Application number
AT05804583T
Other languages
English (en)
Inventor
Matthew Colburn
Yves Martin
Charles Rettner
Kessel Theodore Van
Hematha Wickramasinghe
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE399336T1 publication Critical patent/ATE399336T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7011—Pre-exposure scan; original with original holder alignment; Prealignment, i.e. workpiece with workpiece holder
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2239/00—Aspects relating to filtering material for liquid or gaseous fluids
    • B01D2239/04—Additives and treatments of the filtering material
    • B01D2239/045—Deodorising additives

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laminated Bodies (AREA)
AT05804583T 2005-01-18 2005-10-18 Druckreferenzvorlage zur mehrschicht- oder mehrstruktur-registration und verfahren dafür ATE399336T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/037,890 US20060157898A1 (en) 2005-01-18 2005-01-18 Imprint reference template for multilayer or multipattern registration and method therefor

Publications (1)

Publication Number Publication Date
ATE399336T1 true ATE399336T1 (de) 2008-07-15

Family

ID=35539396

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05804583T ATE399336T1 (de) 2005-01-18 2005-10-18 Druckreferenzvorlage zur mehrschicht- oder mehrstruktur-registration und verfahren dafür

Country Status (7)

Country Link
US (2) US20060157898A1 (de)
EP (1) EP1839088B1 (de)
JP (1) JP2008527736A (de)
CN (1) CN101088045B (de)
AT (1) ATE399336T1 (de)
DE (1) DE602005007776D1 (de)
WO (1) WO2006078333A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101264754B1 (ko) * 2005-03-23 2013-05-15 에이저 시스템즈 엘엘시 임프린트 리소그래피 및 직접 기록 기술을 사용하는디바이스 제조 방법
US20080023885A1 (en) * 2006-06-15 2008-01-31 Nanochip, Inc. Method for forming a nano-imprint lithography template having very high feature counts
US20070121477A1 (en) * 2006-06-15 2007-05-31 Nanochip, Inc. Cantilever with control of vertical and lateral position of contact probe tip
US20080074984A1 (en) * 2006-09-21 2008-03-27 Nanochip, Inc. Architecture for a Memory Device
US7977655B2 (en) * 2009-05-21 2011-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system of monitoring E-beam overlay and providing advanced process control
JP5326806B2 (ja) * 2009-05-21 2013-10-30 住友電気工業株式会社 半導体光素子を作製する方法
CN102456540B (zh) * 2010-10-19 2014-05-21 上海华虹宏力半导体制造有限公司 应用于外延工艺中的光刻套刻标记的制备方法
JP2012089636A (ja) * 2010-10-19 2012-05-10 Toshiba Corp ナノインプリント法
CN102848709B (zh) * 2012-09-29 2015-05-13 信利光电股份有限公司 一种半自动丝网印刷对位方法
US9377683B2 (en) 2013-03-22 2016-06-28 HGST Netherlands B.V. Imprint template with optically-detectable alignment marks and method for making using block copolymers
US8900885B1 (en) 2013-05-28 2014-12-02 International Business Machines Corporation Wafer bonding misalignment reduction
US11075126B2 (en) * 2019-02-15 2021-07-27 Kla-Tencor Corporation Misregistration measurements using combined optical and electron beam technology
US11488949B1 (en) * 2021-06-07 2022-11-01 United Microelectronics Corp. Method of generating dummy patterns for device-under-test and calibration kits
WO2023172766A2 (en) * 2022-03-11 2023-09-14 Board Of Regents, The University Of Texas System Nanoshape patterning techniques that allow high-throughput fabrication of functional nanostructures with complex geometries on planar and non-planar substrates

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0138297B1 (ko) * 1994-02-07 1998-06-01 김광호 포토 마스크 및 그 제조 방법
US5772905A (en) * 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US6300018B1 (en) * 1999-09-21 2001-10-09 Tyco Electronics Logistics Ag Photolithography mask having a subresolution alignment mark window
US6921615B2 (en) * 2000-07-16 2005-07-26 Board Of Regents, The University Of Texas System High-resolution overlay alignment methods for imprint lithography
JP2004523906A (ja) * 2000-10-12 2004-08-05 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム 室温かつ低圧マイクロおよびナノ転写リソグラフィのためのテンプレート
JP2002252157A (ja) * 2001-02-22 2002-09-06 Sony Corp マスク作製用部材およびその製造方法ならびにマスクおよびその製造方法ならびに露光方法ならびに半導体装置の製造方法
AU2003280168A1 (en) * 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Stress-free composite substrate and method of manufacturing such a composite substrate

Also Published As

Publication number Publication date
EP1839088B1 (de) 2008-06-25
EP1839088A1 (de) 2007-10-03
CN101088045A (zh) 2007-12-12
DE602005007776D1 (de) 2008-08-07
US20060157898A1 (en) 2006-07-20
WO2006078333A1 (en) 2006-07-27
US20080180646A1 (en) 2008-07-31
JP2008527736A (ja) 2008-07-24
CN101088045B (zh) 2011-04-13

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