ATE400897T1 - Halbleiterbauelement mit superparaelektrischem gate-isolator - Google Patents

Halbleiterbauelement mit superparaelektrischem gate-isolator

Info

Publication number
ATE400897T1
ATE400897T1 AT05849933T AT05849933T ATE400897T1 AT E400897 T1 ATE400897 T1 AT E400897T1 AT 05849933 T AT05849933 T AT 05849933T AT 05849933 T AT05849933 T AT 05849933T AT E400897 T1 ATE400897 T1 AT E400897T1
Authority
AT
Austria
Prior art keywords
gate dielectric
channel region
semiconductor component
gate insulator
superparaelectric
Prior art date
Application number
AT05849933T
Other languages
English (en)
Inventor
Yukiko Furukawa
Cornelis A Mutsaers
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE400897T1 publication Critical patent/ATE400897T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6332—Deposition from the gas or vapour phase using thermal evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
AT05849933T 2004-12-21 2005-12-13 Halbleiterbauelement mit superparaelektrischem gate-isolator ATE400897T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0427900.6A GB0427900D0 (en) 2004-12-21 2004-12-21 Semiconductor device with high dielectric constant gate insulator and method of manufacture

Publications (1)

Publication Number Publication Date
ATE400897T1 true ATE400897T1 (de) 2008-07-15

Family

ID=34090400

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05849933T ATE400897T1 (de) 2004-12-21 2005-12-13 Halbleiterbauelement mit superparaelektrischem gate-isolator

Country Status (9)

Country Link
US (1) US8106434B2 (de)
EP (1) EP1831930B1 (de)
JP (1) JP2008524866A (de)
KR (1) KR20070087212A (de)
CN (1) CN100533760C (de)
AT (1) ATE400897T1 (de)
DE (1) DE602005008107D1 (de)
GB (1) GB0427900D0 (de)
WO (1) WO2006067678A1 (de)

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US20120080749A1 (en) * 2010-09-30 2012-04-05 Purtell Robert J Umos semiconductor devices formed by low temperature processing
DE102012005262B4 (de) * 2012-03-15 2014-11-06 Forschungszentrum Jülich GmbH Sensoranordnung aus Trägersubstrat und ferroelektrischer Schicht
DE102012022013A1 (de) 2012-11-02 2014-05-08 Forschungszentrum Jülich GmbH Fachbereich Patente Peptide, die an amino-terminal verkürztes Amyloid-beta-Peptid binden und deren Verwendung
US9698235B2 (en) 2013-10-22 2017-07-04 National Institute Of Advanced Industrial Science And Technology Field-effect transistor
KR102142038B1 (ko) * 2016-02-01 2020-09-14 가부시키가이샤 리코 전계 효과 트랜지스터, 그 제조 방법, 디스플레이 소자, 디스플레이 디바이스, 및 시스템
US10702940B2 (en) * 2018-08-20 2020-07-07 Samsung Electronics Co., Ltd. Logic switching device and method of manufacturing the same
US10714486B2 (en) 2018-09-13 2020-07-14 Sandisk Technologies Llc Static random access memory cell employing n-doped PFET gate electrodes and methods of manufacturing the same
KR102903264B1 (ko) * 2019-10-22 2025-12-22 삼성전자주식회사 전자 소자 및 그 제조방법
US11257950B2 (en) * 2020-02-24 2022-02-22 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method for the semiconductor structure
CN112151357B (zh) * 2020-09-24 2023-03-21 欧阳俊 一种钛酸钡基超顺电膜及其中低温溅射制备方法与应用
US11817475B2 (en) * 2020-11-27 2023-11-14 Samsung Electronics Co., Ltd. Semiconductor device and semiconductor apparatus including the same
EP4064363A1 (de) * 2021-03-24 2022-09-28 Hitachi Energy Switzerland AG Halbleiterbauelement mit isoliertem gate, verfahren zur herstellung davon und leistungsmodul damit
KR102929695B1 (ko) 2022-04-14 2026-02-20 삼성전자주식회사 반도체 장치
US20230352584A1 (en) * 2022-05-02 2023-11-02 Dmitri Evgenievich Nikonov Technologies for transistors with a ferroelectric gate dielectric

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US5112433A (en) * 1988-12-09 1992-05-12 Battelle Memorial Institute Process for producing sub-micron ceramic powders of perovskite compounds with controlled stoichiometry and particle size
JPH06151872A (ja) * 1992-11-09 1994-05-31 Mitsubishi Kasei Corp Ｆｅｔ素子
US5739563A (en) * 1995-03-15 1998-04-14 Kabushiki Kaisha Toshiba Ferroelectric type semiconductor device having a barium titanate type dielectric film and method for manufacturing the same
WO1996029734A1 (en) 1995-03-20 1996-09-26 Hitachi, Ltd. Semiconductor integrated circuit device and its manufacture
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Also Published As

Publication number Publication date
KR20070087212A (ko) 2007-08-27
EP1831930B1 (de) 2008-07-09
US20100001324A1 (en) 2010-01-07
US8106434B2 (en) 2012-01-31
CN100533760C (zh) 2009-08-26
GB0427900D0 (en) 2005-01-19
WO2006067678A1 (en) 2006-06-29
DE602005008107D1 (de) 2008-08-21
CN101084581A (zh) 2007-12-05
JP2008524866A (ja) 2008-07-10
EP1831930A1 (de) 2007-09-12

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