ATE401988T1 - Nanokristlallstrukturen - Google Patents

Nanokristlallstrukturen

Info

Publication number
ATE401988T1
ATE401988T1 AT02803649T AT02803649T ATE401988T1 AT E401988 T1 ATE401988 T1 AT E401988T1 AT 02803649 T AT02803649 T AT 02803649T AT 02803649 T AT02803649 T AT 02803649T AT E401988 T1 ATE401988 T1 AT E401988T1
Authority
AT
Austria
Prior art keywords
grating
nanocrystal structures
nanocrystals
nanocrystal layer
semiconductor
Prior art date
Application number
AT02803649T
Other languages
English (en)
Inventor
Hans Eisler
Vikram Sundar
Michael Walsh
Victor Klimov
Moungi Bawendi
Henry Smith
Original Assignee
Massachusetts Inst Technology
Univ California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Inst Technology, Univ California filed Critical Massachusetts Inst Technology
Application granted granted Critical
Publication of ATE401988T1 publication Critical patent/ATE401988T1/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B5/00—Single-crystal growth from gels
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/252—Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Dispersion Chemistry (AREA)
  • Luminescent Compositions (AREA)
  • Semiconductor Lasers (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
AT02803649T 2001-11-16 2002-11-18 Nanokristlallstrukturen ATE401988T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33145401P 2001-11-16 2001-11-16

Publications (1)

Publication Number Publication Date
ATE401988T1 true ATE401988T1 (de) 2008-08-15

Family

ID=23294043

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02803649T ATE401988T1 (de) 2001-11-16 2002-11-18 Nanokristlallstrukturen

Country Status (8)

Country Link
US (3) US7150910B2 (de)
EP (1) EP1463628B1 (de)
JP (1) JP4703112B2 (de)
AT (1) ATE401988T1 (de)
AU (1) AU2002366091B2 (de)
CA (1) CA2467005A1 (de)
DE (1) DE60227840D1 (de)
WO (1) WO2003043810A2 (de)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1039291A1 (de) * 1999-03-26 2000-09-27 Sony International (Europe) GmbH Optochemischer Fühler and Herstellungsmethode
US7651777B1 (en) * 2000-03-22 2010-01-26 Northwestern University Layer by layer self-assembly of large response molecular electro-optic materials by a desilylation strategy
US7361472B2 (en) 2001-02-23 2008-04-22 Invitrogen Corporation Methods for providing extended dynamic range in analyte assays
US7150910B2 (en) * 2001-11-16 2006-12-19 Massachusetts Institute Of Technology Nanocrystal structures
US20050141843A1 (en) * 2003-12-31 2005-06-30 Invitrogen Corporation Waveguide comprising scattered light detectable particles
US7645397B2 (en) 2004-01-15 2010-01-12 Nanosys, Inc. Nanocrystal doped matrixes
JP4789809B2 (ja) * 2004-01-15 2011-10-12 サムスン エレクトロニクス カンパニー リミテッド ナノ結晶をドーピングしたマトリックス
EP1714359A4 (de) * 2004-02-05 2008-09-17 Univ Oklahoma 110-orientierte gruppe-iv-vi-halbleiterstruktur und verfahren zur verwendung und herstellung dieser
US7742322B2 (en) * 2005-01-07 2010-06-22 Invisage Technologies, Inc. Electronic and optoelectronic devices with quantum dot films
WO2005101530A1 (en) 2004-04-19 2005-10-27 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
US7773404B2 (en) * 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
US7746681B2 (en) * 2005-01-07 2010-06-29 Invisage Technologies, Inc. Methods of making quantum dot films
US7642557B2 (en) * 2004-05-11 2010-01-05 Los Alamos National Security, Llc Non-contact pumping of light emitters via non-radiative energy transfer
US7101754B2 (en) * 2004-06-10 2006-09-05 Dalsa Semiconductor Inc. Titanium silicate films with high dielectric constant
US20070045777A1 (en) * 2004-07-08 2007-03-01 Jennifer Gillies Micronized semiconductor nanocrystal complexes and methods of making and using same
US7557028B1 (en) 2004-07-28 2009-07-07 Nanosys, Inc. Process for group III-V semiconductor nanostructure synthesis and compositions made using same
US8891575B2 (en) * 2004-11-30 2014-11-18 Massachusetts Institute Of Technology Optical feedback structures and methods of making
CA2519608A1 (en) * 2005-01-07 2006-07-07 Edward Sargent Quantum dot-polymer nanocomposite photodetectors and photovoltaics
US7265374B2 (en) * 2005-06-10 2007-09-04 Arima Computer Corporation Light emitting semiconductor device
KR100615338B1 (ko) * 2005-06-15 2006-08-25 삼성에스디아이 주식회사 플라즈마 디스플레이 장치
US7615800B2 (en) * 2005-09-14 2009-11-10 Eastman Kodak Company Quantum dot light emitting layer
KR100838157B1 (ko) 2005-10-20 2008-06-13 한국과학기술연구원 반도체 나노입자를 포함하는 필름, 입자 및 이들의 용도
KR100886084B1 (ko) * 2005-12-06 2009-02-26 주식회사 엘지화학 코어-쉘 형태의 나노입자 및 그 제조방법
WO2007075748A2 (en) * 2005-12-20 2007-07-05 Northwestern University Intercalated superlattice compositions and related methods for modulating dielectric property
KR100745745B1 (ko) * 2006-02-21 2007-08-02 삼성전기주식회사 나노복합재료 및 그 제조방법
US8941299B2 (en) * 2006-05-21 2015-01-27 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US8643058B2 (en) * 2006-07-31 2014-02-04 Massachusetts Institute Of Technology Electro-optical device including nanocrystals
US7785657B2 (en) * 2006-12-11 2010-08-31 Evident Technologies, Inc. Nanostructured layers, method of making nanostructured layers, and application thereof
US8361823B2 (en) * 2007-06-29 2013-01-29 Eastman Kodak Company Light-emitting nanocomposite particles
US8197901B2 (en) * 2007-07-16 2012-06-12 University Of Kentucky In-situ nanoparticle formation in polymer clearcoats
US20100265734A1 (en) * 2007-07-23 2010-10-21 Vladimir Bulovic Optical structures including nanocrystals
US8003021B2 (en) * 2007-11-08 2011-08-23 Toyota Motor Engineering And Manufacturing North America, Inc. Synthesis of Pb alloy and core/shell nanowires
US8693894B2 (en) * 2008-04-28 2014-04-08 Hewlett-Packard Development Company, L.P. Gain clamped optical device for emitting LED mode light
US8765223B2 (en) * 2008-05-08 2014-07-01 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
US8507040B2 (en) 2008-05-08 2013-08-13 Air Products And Chemicals, Inc. Binary and ternary metal chalcogenide materials and method of making and using same
KR101421619B1 (ko) * 2008-05-30 2014-07-22 삼성전자 주식회사 나노결정-금속산화물-폴리머 복합체 및 그의 제조방법
US8012860B2 (en) * 2008-06-17 2011-09-06 Uchicago Argonne, Llc Atomic layer deposition for functionalizing colloidal and semiconductor particles
US7759780B2 (en) * 2008-09-30 2010-07-20 Intel Corporation Microelectronic package with wear resistant coating
KR101018111B1 (ko) * 2008-10-07 2011-02-25 삼성엘이디 주식회사 양자점-금속산화물 복합체, 양자점-금속산화물 복합체의 제조방법 및 양자점-금속산화물 복합체를 포함하는 발광장치
US20100330367A1 (en) 2009-02-03 2010-12-30 Ut-Battelle, Llc Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles
US8965208B2 (en) * 2009-05-22 2015-02-24 Kotura, Inc. Multi-channel optical device
WO2011047198A1 (en) * 2009-10-14 2011-04-21 The Regents Of The University Of California Nanocomposite and method of making thereof
FR2961011B1 (fr) * 2010-06-08 2012-07-20 Commissariat Energie Atomique Materiau nanocomposite et son utilisation en opto-electronique
US8259772B2 (en) * 2011-02-04 2012-09-04 Fondazione Istituto Italiano Di Technologia Fabrication of lasing microcavities consisting of highly luminescent colloidal nanocrystals
WO2013019299A2 (en) * 2011-05-11 2013-02-07 Qd Vision, Inc. Method for processing devices including quantum dots and devices
US8508830B1 (en) 2011-05-13 2013-08-13 Google Inc. Quantum dot near-to-eye display
US8837039B2 (en) * 2012-04-26 2014-09-16 Uchicago Argonne, Llc Multiscale light amplification structures for surface enhanced Raman spectroscopy
US9139770B2 (en) 2012-06-22 2015-09-22 Nanosys, Inc. Silicone ligands for stabilizing quantum dot films
TWI596188B (zh) 2012-07-02 2017-08-21 奈米系統股份有限公司 高度發光奈米結構及其製造方法
WO2014159927A2 (en) 2013-03-14 2014-10-02 Nanosys, Inc. Method for solventless quantum dot exchange
CN105153811B (zh) 2015-08-14 2019-12-10 广州华睿光电材料有限公司 一种用于印刷电子的油墨
CN108291103B (zh) 2015-11-12 2021-12-07 广州华睿光电材料有限公司 印刷组合物、包含其的电子器件及功能材料薄膜的制备方法
CN109790407B (zh) 2016-11-23 2021-12-07 广州华睿光电材料有限公司 印刷油墨组合物及其制备方法和用途

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61112391A (ja) * 1984-11-07 1986-05-30 Hitachi Ltd 半導体レ−ザ装置
JPH04112584A (ja) * 1990-09-03 1992-04-14 Hitachi Ltd 半導体装置
US5262357A (en) * 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
EP0613585A4 (de) 1991-11-22 1995-06-21 Univ California Halbleitende nanokristalle, die durch selbstzusammengesetzte einzelschichten mit festen anorganischen oberflüchen verbunden sind.
US5505928A (en) * 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US5515393A (en) * 1992-01-29 1996-05-07 Sony Corporation Semiconductor laser with ZnMgSSe cladding layers
RU94046132A (ru) * 1992-05-22 1996-09-27 Миннесота Майнинг энд Мануфакчуринг Компани (US) Способ управления системой молекулярной пучковой эпитаксии /mbe/ во время изготовления электролюминисцентного прибора на полупроводниковом ii-yi соединении и ii-yi лазерные диоды
US5674698A (en) 1992-09-14 1997-10-07 Sri International Up-converting reporters for biological and other assays using laser excitation techniques
US5260957A (en) * 1992-10-29 1993-11-09 The Charles Stark Draper Laboratory, Inc. Quantum dot Laser
US5293050A (en) * 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
US6048616A (en) * 1993-04-21 2000-04-11 Philips Electronics N.A. Corp. Encapsulated quantum sized doped semiconductor particles and method of manufacturing same
JPH0750448A (ja) * 1993-08-04 1995-02-21 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
US5492080A (en) * 1993-12-27 1996-02-20 Matsushita Electric Industrial Co., Ltd. Crystal-growth method and semiconductor device production method using the crystal-growth method
US5422489A (en) * 1994-01-24 1995-06-06 Bhargava; Rameshwar N. Light emitting device
US5448582A (en) 1994-03-18 1995-09-05 Brown University Research Foundation Optical sources having a strongly scattering gain medium providing laser-like action
US5434878A (en) * 1994-03-18 1995-07-18 Brown University Research Foundation Optical gain medium having doped nanocrystals of semiconductors and also optical scatterers
US5559057A (en) * 1994-03-24 1996-09-24 Starfire Electgronic Development & Marketing Ltd. Method for depositing and patterning thin films formed by fusing nanocrystalline precursors
US5670279A (en) * 1994-03-24 1997-09-23 Starfire Electronic Development & Marketing, Ltd. Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
US5576248A (en) * 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
US5537000A (en) * 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
US5422907A (en) * 1994-05-20 1995-06-06 Bhargava; Rameshwar N. Pumped solid-state lasers comprising doped nanocrystal phosphors
US5541948A (en) * 1994-11-28 1996-07-30 The Regents Of The University Of California Transition-metal doped sulfide, selenide, and telluride laser crystal and lasers
US5585640A (en) * 1995-01-11 1996-12-17 Huston; Alan L. Glass matrix doped with activated luminescent nanocrystalline particles
US5747180A (en) 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
US5908608A (en) 1996-11-08 1999-06-01 Spectra Science Corporation Synthesis of metal chalcogenide quantum
JP3478710B2 (ja) * 1996-11-27 2003-12-15 松下電器産業株式会社 光電子材料及びその応用デバイス、並びに光電子材料の製造方法
US6057561A (en) * 1997-03-07 2000-05-02 Japan Science And Technology Corporation Optical semiconductor element
US6035089A (en) * 1997-06-11 2000-03-07 Lockheed Martin Energy Research Corporation Integrated narrowband optical filter based on embedded subwavelength resonant grating structures
US6096496A (en) * 1997-06-19 2000-08-01 Frankel; Robert D. Supports incorporating vertical cavity emitting lasers and tracking apparatus for use in combinatorial synthesis
US6632526B1 (en) 1997-10-14 2003-10-14 Luminex Corporation Precision fluorescently dyed particles and methods of making and using same
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6501091B1 (en) 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
US6337117B1 (en) 1998-07-01 2002-01-08 Mitsubishi Chemical Corporation Optical memory device
JP2000155981A (ja) * 1998-11-17 2000-06-06 Mitsubishi Chemicals Corp 光メモリ素子
US6617583B1 (en) * 1998-09-18 2003-09-09 Massachusetts Institute Of Technology Inventory control
US6426513B1 (en) 1998-09-18 2002-07-30 Massachusetts Institute Of Technology Water-soluble thiol-capped nanocrystals
JP4425470B2 (ja) 1998-09-18 2010-03-03 マサチューセッツ インスティテュート オブ テクノロジー 半導体ナノ結晶の生物学的用途
US6251303B1 (en) 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
CA2374337C (en) 1999-07-26 2009-04-14 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
CA2406983A1 (en) * 2000-03-14 2001-09-27 Massachusetts Institute Of Technology A gain medium and lasers based on close-packed semiconductor nanocrystals
US6611640B2 (en) * 2000-10-03 2003-08-26 Evident Technologies Optical dispersion compensator
US20020186921A1 (en) * 2001-06-06 2002-12-12 Schumacher Lynn C. Multiwavelength optical fiber devices
EP1436844B1 (de) * 2001-09-05 2016-03-23 Rensselaer Polytechnic Institute Passivierte nanopartikel, verfahren zu ihrer herstellung und einrichtungen mit nanopartikeln
US7150910B2 (en) * 2001-11-16 2006-12-19 Massachusetts Institute Of Technology Nanocrystal structures
FR2862955B1 (fr) * 2003-12-02 2006-03-10 Commissariat Energie Atomique Nanocristaux inorganiques a couche de revetement organique, leur procede de preparation, et materiaux constitues par ceux-ci.

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US8121162B2 (en) 2012-02-21
JP4703112B2 (ja) 2011-06-15
DE60227840D1 (de) 2008-09-04
US20070071062A1 (en) 2007-03-29
EP1463628A4 (de) 2006-03-08
AU2002366091A1 (en) 2003-06-10
WO2003043810A2 (en) 2003-05-30
AU2002366091B2 (en) 2008-04-17
US20040004982A1 (en) 2004-01-08
EP1463628B1 (de) 2008-07-23
US7150910B2 (en) 2006-12-19
JP2005512308A (ja) 2005-04-28
US20090253224A1 (en) 2009-10-08
CA2467005A1 (en) 2003-05-30
WO2003043810A3 (en) 2004-07-15
US7470473B2 (en) 2008-12-30
EP1463628A2 (de) 2004-10-06

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