ATE405946T1 - Kalibrierverfahren für apparaturen zur thermischen behandlung - Google Patents

Kalibrierverfahren für apparaturen zur thermischen behandlung

Info

Publication number
ATE405946T1
ATE405946T1 AT05291261T AT05291261T ATE405946T1 AT E405946 T1 ATE405946 T1 AT E405946T1 AT 05291261 T AT05291261 T AT 05291261T AT 05291261 T AT05291261 T AT 05291261T AT E405946 T1 ATE405946 T1 AT E405946T1
Authority
AT
Austria
Prior art keywords
thickness profile
calibration
test substrate
layer
substrate
Prior art date
Application number
AT05291261T
Other languages
English (en)
Inventor
Marlene Bras
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Application granted granted Critical
Publication of ATE405946T1 publication Critical patent/ATE405946T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)
  • Gasification And Melting Of Waste (AREA)
AT05291261T 2005-06-10 2005-06-10 Kalibrierverfahren für apparaturen zur thermischen behandlung ATE405946T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05291261A EP1734571B1 (de) 2005-06-10 2005-06-10 Kalibrierverfahren für Apparaturen zur thermischen Behandlung

Publications (1)

Publication Number Publication Date
ATE405946T1 true ATE405946T1 (de) 2008-09-15

Family

ID=34942404

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05291261T ATE405946T1 (de) 2005-06-10 2005-06-10 Kalibrierverfahren für apparaturen zur thermischen behandlung

Country Status (8)

Country Link
US (1) US7225095B2 (de)
EP (1) EP1734571B1 (de)
JP (1) JP4279832B2 (de)
KR (1) KR100712040B1 (de)
CN (1) CN100508110C (de)
AT (1) ATE405946T1 (de)
DE (1) DE602005009159D1 (de)
SG (1) SG128588A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7619184B2 (en) * 2003-03-04 2009-11-17 Micron Technology, Inc. Multi-parameter process and control method
US7700376B2 (en) * 2005-04-06 2010-04-20 Applied Materials, Inc. Edge temperature compensation in thermal processing particularly useful for SOI wafers
US7951616B2 (en) * 2006-03-28 2011-05-31 Lam Research Corporation Process for wafer temperature verification in etch tools
US8206996B2 (en) * 2006-03-28 2012-06-26 Lam Research Corporation Etch tool process indicator method and apparatus
DE102007019122B3 (de) * 2007-04-23 2008-06-26 Texas Instruments Deutschland Gmbh Verfahren zur Temperaturregelung während eines Epitaxieschrittes von Halbleiterwafern
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
FR2948494B1 (fr) * 2009-07-27 2011-09-16 Soitec Silicon On Insulator Procede de determination d'une position centree d'un substrat semi-conducteur dans un four de recuit, dispositif pour traiter thermiquement des substrats semi-conducteurs et procede pour calibrer un tel dispositif
US20150169422A1 (en) * 2013-12-13 2015-06-18 Metal Industries Research & Development Centre Evaluation method for calibration of processing equipment
CN107275208B (zh) * 2017-05-31 2019-09-17 上海华力微电子有限公司 晶圆退火的热量补偿方法
CN109698141A (zh) * 2018-12-27 2019-04-30 上海华力集成电路制造有限公司 一种提升栅氧厚度均匀性的方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB974111A (en) 1961-03-16 1964-11-04 Gen Aniline & Film Corp Organic compositions incorporating ultra-violet light absorbers
GB1052997A (de) * 1963-11-13
US3700754A (en) * 1967-02-23 1972-10-24 American Cyanamid Co Compositions of polymers of methyl methacrylate and polymers of ethylene
US4320174A (en) * 1980-09-15 1982-03-16 The B. F. Goodrich Company Transparent and translucent vinyl polymeric composite
DE3307051A1 (de) 1983-03-01 1984-09-06 Basf Ag, 6700 Ludwigshafen Schwerentflammbare, transparente poly-(arylether-aryl-sulfon)-formmassen, verfahren zu deren herstellung sowie deren verwendung
US4935275A (en) * 1987-04-27 1990-06-19 Toyoda Gosei Co., Ltd. Polyurethane material for decorative parts
BR9105721A (pt) 1990-04-16 1992-09-22 Atochem North America Artigo de cloreto de polivinila,estabilizado contra ultravioleta,de superficie modificada
US5662469A (en) * 1991-12-13 1997-09-02 Tokyo Electron Tohoku Kabushiki Kaisha Heat treatment method
JPH05267200A (ja) * 1992-03-24 1993-10-15 Hitachi Ltd 半導体熱処理装置
JP3103227B2 (ja) * 1992-12-09 2000-10-30 株式会社日立製作所 半導体装置の製造方法
US5512620A (en) * 1994-05-05 1996-04-30 General Electric Company Benzoxazolyl optical brightners in and for thermoplastic compositions
DE4443355A1 (de) * 1994-12-06 1996-06-13 Roehm Gmbh Flugzeugverglasung mit erhöhter Lichtstabilität, verbesserter chemischer Stabilität und verbesserter Wärmeformbeständigkeit
DE19522118C1 (de) 1995-06-19 1997-03-13 Hoechst Ag Amorphe, transparente, UV-stabilisierte Platte aus einem kristallisierbaren Thermoplast, Verfahren zu deren Herstellung sowie deren Verwendung
US5674579A (en) * 1995-11-20 1997-10-07 Elf Atochem S.A. Flexible translucent polyamide composition
SG68631A1 (en) 1996-09-06 1999-11-16 Gen Electric Improved color stabilization of polycarbonate resins
DE19754299A1 (de) 1997-12-08 1999-06-24 Basf Ag Transparente Mischungen enthaltend thermoplastische Polyisocyanat-Polyadditionsprodukte, Polyvinylchlorid und Stabilisatoren
US6200023B1 (en) * 1999-03-15 2001-03-13 Steag Rtp Systems, Inc. Method for determining the temperature in a thermal processing chamber
JP4426024B2 (ja) * 1999-09-02 2010-03-03 東京エレクトロン株式会社 熱処理装置の温度校正方法
US6395100B1 (en) * 2000-01-03 2002-05-28 Advanced Micro Devices, Inc. Method of improving vacuum quality in semiconductor processing chambers
JP4459357B2 (ja) * 2000-02-01 2010-04-28 東京エレクトロン株式会社 温度調整方法及び温度調整装置
DE60133206T2 (de) * 2000-07-25 2009-03-12 Tokyo Electron Ltd. Verfahren zur bestimmung von parametern einer thermischen behandlung
JP2002261036A (ja) * 2001-02-28 2002-09-13 Dainippon Screen Mfg Co Ltd 熱処理装置
FR2846786B1 (fr) * 2002-11-05 2005-06-17 Procede de recuit thermique rapide de tranches a couronne
US7700376B2 (en) * 2005-04-06 2010-04-20 Applied Materials, Inc. Edge temperature compensation in thermal processing particularly useful for SOI wafers

Also Published As

Publication number Publication date
DE602005009159D1 (de) 2008-10-02
CN1877791A (zh) 2006-12-13
EP1734571A1 (de) 2006-12-20
JP2006344924A (ja) 2006-12-21
CN100508110C (zh) 2009-07-01
SG128588A1 (en) 2007-01-30
EP1734571B1 (de) 2008-08-20
JP4279832B2 (ja) 2009-06-17
KR100712040B1 (ko) 2007-04-27
US7225095B2 (en) 2007-05-29
KR20060128609A (ko) 2006-12-14
US20060284720A1 (en) 2006-12-21

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