ATE405990T1 - Mos-schaltnetzwerk - Google Patents
Mos-schaltnetzwerkInfo
- Publication number
- ATE405990T1 ATE405990T1 AT04806641T AT04806641T ATE405990T1 AT E405990 T1 ATE405990 T1 AT E405990T1 AT 04806641 T AT04806641 T AT 04806641T AT 04806641 T AT04806641 T AT 04806641T AT E405990 T1 ATE405990 T1 AT E405990T1
- Authority
- AT
- Austria
- Prior art keywords
- coupled
- transistor
- switching circuit
- nmos transistor
- power supply
- Prior art date
Links
- 239000004020 conductor Substances 0.000 abstract 5
- 230000000295 complement effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
Landscapes
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP04100147 | 2004-01-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE405990T1 true ATE405990T1 (de) | 2008-09-15 |
Family
ID=34854671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT04806641T ATE405990T1 (de) | 2004-01-19 | 2004-12-30 | Mos-schaltnetzwerk |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7482860B2 (de) |
| EP (1) | EP1709741B1 (de) |
| JP (1) | JP2007519336A (de) |
| CN (1) | CN1906852A (de) |
| AT (1) | ATE405990T1 (de) |
| DE (1) | DE602004016051D1 (de) |
| ES (1) | ES2311876T3 (de) |
| WO (1) | WO2005078931A1 (de) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1978635B1 (de) * | 2007-04-04 | 2013-01-23 | TELEFONAKTIEBOLAGET LM ERICSSON (publ) | Schaltung und Verfahren zur Reduzierung von Nichtlinearitäten zweiter und dritter Ordnung |
| WO2011079879A1 (en) | 2009-12-30 | 2011-07-07 | Stmicroelectronics S.R.L. | Low voltage isolation switch, in particular for a transmission channel for ultrasound applications |
| WO2011079881A1 (en) * | 2009-12-30 | 2011-07-07 | Stmicroelectronics S.R.L. | Clamping circuit to a reference voltage, in particular to ground, suitable to be used in a transmission channel for ultrasound applications |
| US8648629B2 (en) | 2009-12-30 | 2014-02-11 | Stmicroelectronics S.R.L. | Transmission channel for ultrasound applications |
| WO2011079882A1 (en) * | 2009-12-30 | 2011-07-07 | Stmicroelectronics S.R.L. | Switching circuit, suitable to be used in a transmission channel for ultrasound applications |
| CN101997526B (zh) * | 2010-09-21 | 2012-08-22 | 上海山景集成电路技术有限公司 | 能防止电流倒灌的功率管电路 |
| US8279007B2 (en) * | 2010-10-21 | 2012-10-02 | Integrated Device Technology, Inc. | Switch for use in a programmable gain amplifier |
| CN103229418B (zh) | 2010-12-23 | 2016-05-25 | 意法半导体股份有限公司 | 尤其用于针对超声应用的传输通道的低压隔离开关 |
| US8588004B2 (en) | 2012-04-12 | 2013-11-19 | Lsi Corporation | Memory device having multi-port memory cell with expandable port configuration |
| CN104639133B (zh) * | 2013-11-11 | 2017-08-08 | 上海华虹宏力半导体制造有限公司 | Mos开关电路 |
| US9680465B2 (en) * | 2014-08-21 | 2017-06-13 | Cypress Semiconductor Corporation | Switching circuit |
| CN106210641A (zh) * | 2016-07-21 | 2016-12-07 | 刘光旭 | 一种基于物联网的用于小区安防的监控系统 |
| EP3385981B1 (de) * | 2017-04-04 | 2025-12-17 | Nexperia B.V. | Leistungsvorrichtung |
| CN107238786B (zh) * | 2017-04-24 | 2019-10-25 | 中国科学院微电子研究所 | 用于mosfet器件模型参数提取的方法及装置 |
| TWI716771B (zh) * | 2018-11-23 | 2021-01-21 | 立積電子股份有限公司 | 驅動裝置 |
| CN112306140B (zh) * | 2019-07-24 | 2022-01-18 | 中国科学院上海微系统与信息技术研究所 | 全耗尽绝缘体上硅的背栅电压偏置电路 |
| CN110620572B (zh) * | 2019-09-30 | 2023-07-25 | 格威半导体(厦门)有限公司 | 晶体管开关电路及其集成电路 |
| CN116054812B (zh) * | 2022-12-13 | 2025-12-02 | 浙江中控研究院有限公司 | 一种基于隔离电源的高速数字量输出电路及装置 |
| CN116260423A (zh) * | 2023-03-30 | 2023-06-13 | 江苏尚飞光电科技股份有限公司 | 一种阻抗匹配电路及数模转换器 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4710730A (en) * | 1987-03-20 | 1987-12-01 | Motorola, Inc. | Data clock oscillator having accurate duty cycle |
| JP3308572B2 (ja) * | 1991-11-12 | 2002-07-29 | 富士通株式会社 | 半導体装置 |
| JPH1012823A (ja) * | 1996-06-21 | 1998-01-16 | Nkk Corp | ２電源型集積回路 |
| GB2327544B (en) * | 1997-07-16 | 2001-02-07 | Ericsson Telefon Ab L M | Electronic analogue switch |
| US6477079B2 (en) * | 1999-05-18 | 2002-11-05 | Kabushiki Kaisha Toshiba | Voltage generator for semiconductor device |
| JP2002025264A (ja) * | 2000-07-05 | 2002-01-25 | Toshiba Corp | 半導体装置 |
| US6661253B1 (en) * | 2000-08-16 | 2003-12-09 | Altera Corporation | Passgate structures for use in low-voltage applications |
| DE10061589C1 (de) * | 2000-12-11 | 2002-07-25 | Infineon Technologies Ag | Schaltungsanordnung mit Integriertem Verstärker |
| US6522187B1 (en) * | 2001-03-12 | 2003-02-18 | Linear Technology Corporation | CMOS switch with linearized gate capacitance |
| US6977850B2 (en) * | 2001-12-27 | 2005-12-20 | Kabushiki Kaisha Toshiba | Semiconductor device having switch circuit to supply voltage |
| US6900688B2 (en) * | 2002-09-27 | 2005-05-31 | Oki Electric Industry Co., Ltd. | Switch circuit |
| JP4231003B2 (ja) * | 2003-03-06 | 2009-02-25 | 富士通マイクロエレクトロニクス株式会社 | 半導体集積回路 |
| WO2005001938A1 (ja) * | 2003-06-27 | 2005-01-06 | Fujitsu Limited | 半導体集積回路 |
| JP4580202B2 (ja) * | 2004-09-03 | 2010-11-10 | 富士通セミコンダクター株式会社 | 半導体装置の電圧供給回路 |
| JP2009500959A (ja) * | 2005-07-08 | 2009-01-08 | ズィーモス テクノロジー，インコーポレイテッド | ソース・トランジスター構成及び制御方法 |
| KR100727414B1 (ko) * | 2006-01-10 | 2007-06-13 | 삼성전자주식회사 | 저전력 게이팅 회로 및 방법 |
| KR100710807B1 (ko) * | 2006-05-19 | 2007-04-23 | 삼성전자주식회사 | 누설 전류 및 고전압 브레이크다운을 줄일 수 있는 고전압전달 회로 및 그것을 포함한 로우 디코더 회로 |
-
2004
- 2004-12-30 WO PCT/IB2004/052940 patent/WO2005078931A1/en not_active Ceased
- 2004-12-30 EP EP04806641A patent/EP1709741B1/de not_active Expired - Lifetime
- 2004-12-30 AT AT04806641T patent/ATE405990T1/de not_active IP Right Cessation
- 2004-12-30 DE DE602004016051T patent/DE602004016051D1/de not_active Expired - Lifetime
- 2004-12-30 CN CNA2004800406382A patent/CN1906852A/zh active Pending
- 2004-12-30 JP JP2006548454A patent/JP2007519336A/ja not_active Withdrawn
- 2004-12-30 US US10/586,507 patent/US7482860B2/en not_active Expired - Lifetime
- 2004-12-30 ES ES04806641T patent/ES2311876T3/es not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US7482860B2 (en) | 2009-01-27 |
| JP2007519336A (ja) | 2007-07-12 |
| DE602004016051D1 (de) | 2008-10-02 |
| EP1709741A1 (de) | 2006-10-11 |
| EP1709741B1 (de) | 2008-08-20 |
| CN1906852A (zh) | 2007-01-31 |
| US20070159229A1 (en) | 2007-07-12 |
| WO2005078931A1 (en) | 2005-08-25 |
| ES2311876T3 (es) | 2009-02-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |