ATE406668T1 - Vergrösserung der seitlichen auflösung der organischen dampfjet-ablagerung durch verwendung eines eingrenzenden schutzflusses - Google Patents

Vergrösserung der seitlichen auflösung der organischen dampfjet-ablagerung durch verwendung eines eingrenzenden schutzflusses

Info

Publication number
ATE406668T1
ATE406668T1 AT04796037T AT04796037T ATE406668T1 AT E406668 T1 ATE406668 T1 AT E406668T1 AT 04796037 T AT04796037 T AT 04796037T AT 04796037 T AT04796037 T AT 04796037T AT E406668 T1 ATE406668 T1 AT E406668T1
Authority
AT
Austria
Prior art keywords
enlarging
steam jet
lateral resolution
organic steam
protective flow
Prior art date
Application number
AT04796037T
Other languages
English (en)
Inventor
Max Shtein
Stephen Forrest
Original Assignee
Univ Princeton
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Princeton filed Critical Univ Princeton
Application granted granted Critical
Publication of ATE406668T1 publication Critical patent/ATE406668T1/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Air Humidification (AREA)
  • Thin Film Transistor (AREA)
AT04796037T 2003-10-23 2004-10-22 Vergrösserung der seitlichen auflösung der organischen dampfjet-ablagerung durch verwendung eines eingrenzenden schutzflusses ATE406668T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/690,704 US7744957B2 (en) 2003-10-23 2003-10-23 Method and apparatus for depositing material

Publications (1)

Publication Number Publication Date
ATE406668T1 true ATE406668T1 (de) 2008-09-15

Family

ID=34521705

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04796037T ATE406668T1 (de) 2003-10-23 2004-10-22 Vergrösserung der seitlichen auflösung der organischen dampfjet-ablagerung durch verwendung eines eingrenzenden schutzflusses

Country Status (9)

Country Link
US (1) US7744957B2 (de)
EP (3) EP1978570B1 (de)
JP (1) JP5000302B2 (de)
KR (1) KR101128144B1 (de)
CN (1) CN1883060B (de)
AT (1) ATE406668T1 (de)
DE (1) DE602004016196D1 (de)
TW (1) TWI363805B (de)
WO (1) WO2005043641A1 (de)

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US8931431B2 (en) * 2009-03-25 2015-01-13 The Regents Of The University Of Michigan Nozzle geometry for organic vapor jet printing
US8613496B2 (en) * 2009-03-25 2013-12-24 The Regents Of The University Of Michigan Compact organic vapor jet printing print head
JP2012525505A (ja) * 2009-05-01 2012-10-22 カティーヴァ、インク. 有機蒸発材料印刷の方法および装置
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US8691178B2 (en) 2010-06-03 2014-04-08 The Regents Of The University Of Michigan Purification of carbon nanotubes using agarose column and density gradient ultracentrifugation
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CN104651781B (zh) * 2015-03-10 2020-03-03 合肥京东方光电科技有限公司 一种有机蒸汽材料的增压喷射沉积装置及方法
CN104711514B (zh) * 2015-04-07 2017-05-31 合肥京东方光电科技有限公司 一种成膜装置及方法
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US10704144B2 (en) * 2015-10-12 2020-07-07 Universal Display Corporation Apparatus and method for printing multilayer organic thin films from vapor phase in an ultra-pure gas ambient
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CN109906119B (zh) * 2016-10-18 2021-12-21 环球展览公司 有机蒸气喷射沉积装置配置
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Also Published As

Publication number Publication date
JP5000302B2 (ja) 2012-08-15
WO2005043641A1 (en) 2005-05-12
CN1883060A (zh) 2006-12-20
EP3144988A1 (de) 2017-03-22
EP1978570B1 (de) 2017-12-06
EP3144988B1 (de) 2018-05-02
JP2007520854A (ja) 2007-07-26
US7744957B2 (en) 2010-06-29
TW200526793A (en) 2005-08-16
US20050087131A1 (en) 2005-04-28
EP1978570A1 (de) 2008-10-08
EP1676331B1 (de) 2008-08-27
KR101128144B1 (ko) 2012-03-26
CN1883060B (zh) 2010-09-15
DE602004016196D1 (de) 2008-10-09
KR20060108681A (ko) 2006-10-18
TWI363805B (en) 2012-05-11
EP1676331A1 (de) 2006-07-05

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