ATE406669T1 - Organische lichtemittierende vorrichtung mit feldeffektverstärkender mobilität - Google Patents

Organische lichtemittierende vorrichtung mit feldeffektverstärkender mobilität

Info

Publication number
ATE406669T1
ATE406669T1 AT07000671T AT07000671T ATE406669T1 AT E406669 T1 ATE406669 T1 AT E406669T1 AT 07000671 T AT07000671 T AT 07000671T AT 07000671 T AT07000671 T AT 07000671T AT E406669 T1 ATE406669 T1 AT E406669T1
Authority
AT
Austria
Prior art keywords
conduction
emitting device
combining
current densities
organic light
Prior art date
Application number
AT07000671T
Other languages
English (en)
Inventor
Sarah Schols
Stijn Verlaak
Paul Heremans
Original Assignee
Imec Inter Uni Micro Electr
Univ Leuven Kath
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr, Univ Leuven Kath filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE406669T1 publication Critical patent/ATE406669T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3004—Structure or shape of the active region; Materials used for the active region employing a field effect structure for inducing charge-carriers, e.g. FET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
AT07000671T 2006-01-13 2007-01-15 Organische lichtemittierende vorrichtung mit feldeffektverstärkender mobilität ATE406669T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75926006P 2006-01-13 2006-01-13

Publications (1)

Publication Number Publication Date
ATE406669T1 true ATE406669T1 (de) 2008-09-15

Family

ID=37895997

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07000671T ATE406669T1 (de) 2006-01-13 2007-01-15 Organische lichtemittierende vorrichtung mit feldeffektverstärkender mobilität

Country Status (4)

Country Link
US (2) US7768019B2 (de)
EP (1) EP1808911B1 (de)
AT (1) ATE406669T1 (de)
DE (1) DE602007000088D1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI393282B (zh) * 2009-08-11 2013-04-11 Univ Nat Taiwan 具有電極反轉結構之可撓性光電元件及其製作方法
KR101047721B1 (ko) 2010-03-09 2011-07-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US20170179391A1 (en) * 2014-04-24 2017-06-22 University Of Massachusetts Organic photovoltaic devices and methods thereof
DE102016202927A1 (de) * 2016-02-25 2017-08-31 Technische Universität Dresden Halbleiterbauelement, Mikroresonator und Verfahren zum Betrieb eines Halbleiterbauelements
WO2018043763A1 (en) 2016-09-02 2018-03-08 Kyushu University, National University Corporation Continuous-wave organic thin-film distributed feedback laser and electrically driven organic semiconductor laser diode
KR102567101B1 (ko) * 2017-02-07 2023-08-16 고쿠리쓰다이가쿠호진 규슈다이가쿠 전류주입형 유기 반도체 레이저 다이오드, 그 제조 방법 및 프로그램
CN113381284B (zh) * 2021-06-30 2025-12-23 华南师范大学 一种聚合物胆甾相液晶激光器及其制备方法和光学设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539507A (en) 1983-03-25 1985-09-03 Eastman Kodak Company Organic electroluminescent devices having improved power conversion efficiencies
US5245622A (en) 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
US6239033B1 (en) * 1998-05-28 2001-05-29 Sony Corporation Manufacturing method of semiconductor device
US6614059B1 (en) * 1999-01-07 2003-09-02 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device with quantum well
US6852968B1 (en) * 1999-03-08 2005-02-08 Canon Kabushiki Kaisha Surface-type optical apparatus
US6720572B1 (en) 1999-06-25 2004-04-13 The Penn State Research Foundation Organic light emitters with improved carrier injection
WO2003078542A1 (en) * 2002-03-19 2003-09-25 Neoview Co., Ltd. Red organic light-emitting compound and organic light-emitting device comprising the same

Also Published As

Publication number Publication date
US7977672B2 (en) 2011-07-12
US20100230668A1 (en) 2010-09-16
US20080006820A1 (en) 2008-01-10
DE602007000088D1 (de) 2008-10-09
EP1808911A1 (de) 2007-07-18
US7768019B2 (en) 2010-08-03
EP1808911B1 (de) 2008-08-27

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