ATE406676T1 - Optoelektronische vorrichtung mit einem laser mit integriertem modulator und herstellungsverfahren dafür - Google Patents
Optoelektronische vorrichtung mit einem laser mit integriertem modulator und herstellungsverfahren dafürInfo
- Publication number
- ATE406676T1 ATE406676T1 AT06116861T AT06116861T ATE406676T1 AT E406676 T1 ATE406676 T1 AT E406676T1 AT 06116861 T AT06116861 T AT 06116861T AT 06116861 T AT06116861 T AT 06116861T AT E406676 T1 ATE406676 T1 AT E406676T1
- Authority
- AT
- Austria
- Prior art keywords
- laser
- optoelectronic device
- lateral
- production method
- semiconductor material
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0507322A FR2888405B1 (fr) | 2005-07-08 | 2005-07-08 | Dispositif opto-electronique comportant un laser et un modulateur integres et procede de realisation associe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE406676T1 true ATE406676T1 (de) | 2008-09-15 |
Family
ID=36121403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06116861T ATE406676T1 (de) | 2005-07-08 | 2006-07-07 | Optoelektronische vorrichtung mit einem laser mit integriertem modulator und herstellungsverfahren dafür |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7430229B2 (de) |
| EP (1) | EP1764887B1 (de) |
| CN (1) | CN100461563C (de) |
| AT (1) | ATE406676T1 (de) |
| DE (1) | DE602006002459D1 (de) |
| FR (1) | FR2888405B1 (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104662677B (zh) * | 2012-09-28 | 2018-09-04 | 佳能株式会社 | 光源和包括光源的光学相干层析成像装置 |
| EP3113305A1 (de) * | 2015-07-02 | 2017-01-04 | Alcatel Lucent | Halbisolierende vergrabte heterostruktur |
| DE102015116336B4 (de) * | 2015-09-28 | 2020-03-19 | Osram Opto Semiconductors Gmbh | Halbleiterlaser |
| WO2018132521A1 (en) | 2017-01-16 | 2018-07-19 | Canthus Technologies Llc | Combining light-emitting elements of differing divergence on the same substrate |
| US10862268B2 (en) * | 2017-04-04 | 2020-12-08 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing semiconductor device |
| US11381060B2 (en) | 2017-04-04 | 2022-07-05 | Apple Inc. | VCSELs with improved optical and electrical confinement |
| US11552451B2 (en) | 2018-05-28 | 2023-01-10 | Mitsubishi Electric Corporation | Semiconductor laser device |
| EP3888138A1 (de) | 2019-02-21 | 2021-10-06 | Apple Inc. | Indiumphosphid-vcsel mit dielektrischem bragg-spiegel |
| CN113711450B (zh) | 2019-04-01 | 2025-02-18 | 苹果公司 | 具有紧密节距和高效率的vcsel阵列 |
| US11374381B1 (en) | 2019-06-10 | 2022-06-28 | Apple Inc. | Integrated laser module |
| CN111129944B (zh) * | 2019-12-31 | 2021-12-21 | 山东国迅量子芯科技有限公司 | 基于量子通信应用的电吸收光发射芯片及其制作方法 |
| CN112542770B (zh) * | 2020-12-04 | 2021-10-15 | 苏州长光华芯光电技术股份有限公司 | 一种半导体器件及其制备方法 |
| US12494618B2 (en) | 2022-09-14 | 2025-12-09 | Apple Inc. | Vertical emitters with integrated final-stage transistor switch |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5889913A (en) * | 1995-03-15 | 1999-03-30 | Kabushiki Kaisha Toshiba | Optical semiconductor device and method of fabricating the same |
| JP3745985B2 (ja) * | 2001-01-24 | 2006-02-15 | 古河電気工業株式会社 | 複素結合型の分布帰還型半導体レーザ素子 |
| JP4676068B2 (ja) * | 2001-02-02 | 2011-04-27 | 古河電気工業株式会社 | 半導体光素子の作製方法 |
| DE60209184T2 (de) * | 2002-06-12 | 2006-07-20 | Agilent Technologies, Inc. (n.d.Ges.d.Staates Delaware), Palo Alto | Integriertes Halbleiterlaser-Wellenleiter-Element |
| CN1467889A (zh) * | 2002-07-11 | 2004-01-14 | 中国科学院半导体研究所 | 同一源区半导体光放大器、电吸收调制器集成器件 |
-
2005
- 2005-07-08 FR FR0507322A patent/FR2888405B1/fr not_active Expired - Fee Related
-
2006
- 2006-07-07 AT AT06116861T patent/ATE406676T1/de not_active IP Right Cessation
- 2006-07-07 EP EP06116861A patent/EP1764887B1/de not_active Ceased
- 2006-07-07 DE DE602006002459T patent/DE602006002459D1/de not_active Expired - Lifetime
- 2006-07-10 CN CNB200610101772XA patent/CN100461563C/zh not_active Expired - Fee Related
- 2006-07-10 US US11/483,184 patent/US7430229B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN1893209A (zh) | 2007-01-10 |
| FR2888405A1 (fr) | 2007-01-12 |
| CN100461563C (zh) | 2009-02-11 |
| EP1764887B1 (de) | 2008-08-27 |
| FR2888405B1 (fr) | 2007-10-26 |
| US20070041411A1 (en) | 2007-02-22 |
| DE602006002459D1 (de) | 2008-10-09 |
| US7430229B2 (en) | 2008-09-30 |
| EP1764887A1 (de) | 2007-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |