ATE406692T1 - Pegelumsetzemit verstärkung - Google Patents

Pegelumsetzemit verstärkung

Info

Publication number
ATE406692T1
ATE406692T1 AT02758377T AT02758377T ATE406692T1 AT E406692 T1 ATE406692 T1 AT E406692T1 AT 02758377 T AT02758377 T AT 02758377T AT 02758377 T AT02758377 T AT 02758377T AT E406692 T1 ATE406692 T1 AT E406692T1
Authority
AT
Austria
Prior art keywords
gain
gate voltage
power amplifier
level shifting
control
Prior art date
Application number
AT02758377T
Other languages
English (en)
Inventor
Per-Olof Brandt
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Application granted granted Critical
Publication of ATE406692T1 publication Critical patent/ATE406692T1/de

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Control Of Amplification And Gain Control (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Glass Compositions (AREA)
  • Reduction Or Emphasis Of Bandwidth Of Signals (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
AT02758377T 2001-07-31 2002-07-22 Pegelumsetzemit verstärkung ATE406692T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/918,735 US6605974B2 (en) 2001-07-31 2001-07-31 Level shifter with gain

Publications (1)

Publication Number Publication Date
ATE406692T1 true ATE406692T1 (de) 2008-09-15

Family

ID=25440870

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02758377T ATE406692T1 (de) 2001-07-31 2002-07-22 Pegelumsetzemit verstärkung

Country Status (6)

Country Link
US (1) US6605974B2 (de)
EP (1) EP1415396B1 (de)
AT (1) ATE406692T1 (de)
AU (1) AU2002325356A1 (de)
DE (1) DE60228586D1 (de)
WO (1) WO2003012991A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009033637A (ja) * 2007-07-30 2009-02-12 Panasonic Corp レベル変換回路
US8154320B1 (en) * 2009-03-24 2012-04-10 Lockheed Martin Corporation Voltage level shifter

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4392067A (en) * 1981-02-18 1983-07-05 Motorola, Inc. Logic select circuit
US4450369A (en) 1981-05-07 1984-05-22 Schuermeyer Fritz L Dynamic MESFET logic with voltage level shift circuit
JPS5999819A (ja) * 1982-11-27 1984-06-08 Hitachi Ltd 入力インタ−フエイス回路
US4558235A (en) 1983-08-31 1985-12-10 Texas Instruments Incorporated MESFET logic gate having both DC and AC level shift coupling to the output
FR2572234A1 (fr) 1984-10-22 1986-04-25 Gigabit Logic Inc Dispositif de decalage de potentiel pour des circuits integres au gaas
US4743782A (en) * 1984-11-09 1988-05-10 Honeywell Inc. GaAs level-shift logic interface circuit
US4663543A (en) 1985-09-19 1987-05-05 Northern Telecom Limited Voltage level shifting depletion mode FET logical circuit
US4686451A (en) * 1986-10-15 1987-08-11 Triquint Semiconductor, Inc. GaAs voltage reference generator
US4760284A (en) * 1987-01-12 1988-07-26 Triquint Semiconductor, Inc. Pinchoff voltage generator
US4857769A (en) * 1987-01-14 1989-08-15 Hitachi, Ltd. Threshold voltage fluctuation compensation circuit for FETS
US4844563A (en) * 1987-05-19 1989-07-04 Gazelle Microcircuits, Inc. Semiconductor integrated circuit compatible with compound standard logic signals
US4970413A (en) 1987-10-28 1990-11-13 Gigabit Logic VBB-feedback threshold compensation
JP2751422B2 (ja) * 1988-06-27 1998-05-18 日本電気株式会社 半導体装置
US5208488A (en) * 1989-03-03 1993-05-04 Kabushiki Kaisha Toshiba Potential detecting circuit
US5903177A (en) * 1996-09-05 1999-05-11 The Whitaker Corporation Compensation network for pinch off voltage sensitive circuits
JP3307547B2 (ja) * 1996-10-30 2002-07-24 富士通株式会社 レベルシフト回路及びこれを用いた電圧制御型発振回路

Also Published As

Publication number Publication date
DE60228586D1 (de) 2008-10-09
US20030025547A1 (en) 2003-02-06
US6605974B2 (en) 2003-08-12
EP1415396B1 (de) 2008-08-27
EP1415396A2 (de) 2004-05-06
AU2002325356A1 (en) 2003-02-17
WO2003012991A3 (en) 2003-11-06
WO2003012991A2 (en) 2003-02-13

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties