ATE406697T1 - Analogschalter mit zwei komplementären mos- feldeffekttransistoren - Google Patents

Analogschalter mit zwei komplementären mos- feldeffekttransistoren

Info

Publication number
ATE406697T1
ATE406697T1 AT00123491T AT00123491T ATE406697T1 AT E406697 T1 ATE406697 T1 AT E406697T1 AT 00123491 T AT00123491 T AT 00123491T AT 00123491 T AT00123491 T AT 00123491T AT E406697 T1 ATE406697 T1 AT E406697T1
Authority
AT
Austria
Prior art keywords
mos field
effect transistors
effect
channel type
switch
Prior art date
Application number
AT00123491T
Other languages
English (en)
Inventor
Wolfgang Steinhagen
Original Assignee
Texas Instruments Deutschland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Deutschland filed Critical Texas Instruments Deutschland
Application granted granted Critical
Publication of ATE406697T1 publication Critical patent/ATE406697T1/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06Modifications for ensuring a fully conducting state
    • H03K17/063Modifications for ensuring a fully conducting state in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H03K17/6872Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors

Landscapes

  • Electronic Switches (AREA)
AT00123491T 1999-11-11 2000-11-08 Analogschalter mit zwei komplementären mos- feldeffekttransistoren ATE406697T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19954329A DE19954329C1 (de) 1999-11-11 1999-11-11 Analogschalter mit zwei komplementären MOS-Feldeffekttransistoren

Publications (1)

Publication Number Publication Date
ATE406697T1 true ATE406697T1 (de) 2008-09-15

Family

ID=7928727

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00123491T ATE406697T1 (de) 1999-11-11 2000-11-08 Analogschalter mit zwei komplementären mos- feldeffekttransistoren

Country Status (5)

Country Link
US (1) US6359496B1 (de)
EP (1) EP1100200B1 (de)
JP (1) JP2001168693A (de)
AT (1) ATE406697T1 (de)
DE (2) DE19954329C1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005041409A2 (en) * 2003-10-23 2005-05-06 Koninklijke Philips Electronics N.V. Switch
JP4047824B2 (ja) * 2004-03-16 2008-02-13 株式会社東芝 半導体集積回路
RU2278459C2 (ru) * 2004-12-08 2006-06-20 Николай Николаевич Горяшин Квазирезонансный высокочастотный преобразователь напряжения
JP2006311507A (ja) * 2005-03-28 2006-11-09 Matsushita Electric Ind Co Ltd 電源スイッチ回路
US7679423B1 (en) * 2006-12-22 2010-03-16 The United States Of America As Represented By The Secretary Of The Navy Switch circuit for magnetic-induction interface
JP2008219527A (ja) * 2007-03-05 2008-09-18 Fujitsu Ltd アナログスイッチ
US20120081172A1 (en) * 2010-09-30 2012-04-05 Jonathan Hoang Huynh High Voltage Switch Suitable for Use in Flash Memory
US8537593B2 (en) 2011-04-28 2013-09-17 Sandisk Technologies Inc. Variable resistance switch suitable for supplying high voltage to drive load
CN102981547B (zh) * 2011-09-02 2015-01-14 华邦电子股份有限公司 保护电路和控制电路
US8395434B1 (en) 2011-10-05 2013-03-12 Sandisk Technologies Inc. Level shifter with negative voltage capability
US9330776B2 (en) 2014-08-14 2016-05-03 Sandisk Technologies Inc. High voltage step down regulator with breakdown protection
JP6511867B2 (ja) 2015-03-03 2019-05-15 株式会社デンソー D/a変換回路
JP2018160855A (ja) * 2017-03-23 2018-10-11 株式会社東芝 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4446390A (en) * 1981-12-28 1984-05-01 Motorola, Inc. Low leakage CMOS analog switch circuit
US5448181A (en) * 1992-11-06 1995-09-05 Xilinx, Inc. Output buffer circuit having reduced switching noise
JPH06169247A (ja) * 1992-11-30 1994-06-14 New Japan Radio Co Ltd アナログスイッチ
US5506528A (en) * 1994-10-31 1996-04-09 International Business Machines Corporation High speed off-chip CMOS receiver
JPH098612A (ja) * 1995-06-16 1997-01-10 Nec Corp ラッチ回路
FR2738424B1 (fr) * 1995-09-05 1997-11-21 Sgs Thomson Microelectronics Interrupteur analogique basse tension

Also Published As

Publication number Publication date
JP2001168693A (ja) 2001-06-22
US6359496B1 (en) 2002-03-19
DE19954329C1 (de) 2001-04-19
EP1100200B1 (de) 2008-08-27
EP1100200A2 (de) 2001-05-16
DE60040048D1 (de) 2008-10-09
EP1100200A3 (de) 2001-06-06

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties