ATE407453T1 - Herstellungsverfahren für ein halbleiter- bipolartransistor-bauelement - Google Patents

Herstellungsverfahren für ein halbleiter- bipolartransistor-bauelement

Info

Publication number
ATE407453T1
ATE407453T1 AT01945322T AT01945322T ATE407453T1 AT E407453 T1 ATE407453 T1 AT E407453T1 AT 01945322 T AT01945322 T AT 01945322T AT 01945322 T AT01945322 T AT 01945322T AT E407453 T1 ATE407453 T1 AT E407453T1
Authority
AT
Austria
Prior art keywords
active area
type doped
base
collector
poly
Prior art date
Application number
AT01945322T
Other languages
English (en)
Inventor
Doede Terpstra
Catharina Emons
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE407453T1 publication Critical patent/ATE407453T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/054—Forming extrinsic base regions on silicon substrate after insulating device isolation in vertical BJTs having single crystalline emitter, collector or base regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT01945322T 2000-07-03 2001-06-28 Herstellungsverfahren für ein halbleiter- bipolartransistor-bauelement ATE407453T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP00202342 2000-07-03

Publications (1)

Publication Number Publication Date
ATE407453T1 true ATE407453T1 (de) 2008-09-15

Family

ID=8171743

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01945322T ATE407453T1 (de) 2000-07-03 2001-06-28 Herstellungsverfahren für ein halbleiter- bipolartransistor-bauelement

Country Status (7)

Country Link
US (1) US6780724B2 (de)
EP (1) EP1228533B1 (de)
JP (1) JP2004503091A (de)
KR (1) KR100761561B1 (de)
AT (1) ATE407453T1 (de)
DE (1) DE60135628D1 (de)
WO (1) WO2002003470A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6803289B1 (en) * 2002-06-28 2004-10-12 Cypress Semiconductor Corp. Bipolar transistor and method for making the same
US7074628B2 (en) * 2004-09-22 2006-07-11 Agere Systems, Inc. Test structure and method for yield improvement of double poly bipolar device
CN101908485B (zh) * 2010-06-11 2016-03-02 上海华虹宏力半导体制造有限公司 利用三块掩模板制作垂直双极型晶体管的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60186059A (ja) * 1984-03-05 1985-09-21 Sony Corp 半導体装置及びその製造方法
JPS63261746A (ja) * 1987-04-20 1988-10-28 Oki Electric Ind Co Ltd バイポ−ラ型半導体集積回路装置の製造方法
JP2615646B2 (ja) * 1987-08-11 1997-06-04 ソニー株式会社 バイポーラトランジスタの製造方法
US5204274A (en) 1988-11-04 1993-04-20 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor device
US5101256A (en) 1989-02-13 1992-03-31 International Business Machines Corporation Bipolar transistor with ultra-thin epitaxial base and method of fabricating same
JPH03138946A (ja) * 1989-10-24 1991-06-13 Sony Corp 半導体装置
JPH06260489A (ja) * 1993-03-02 1994-09-16 Oki Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
DE60135628D1 (de) 2008-10-16
JP2004503091A (ja) 2004-01-29
EP1228533A1 (de) 2002-08-07
US6780724B2 (en) 2004-08-24
KR100761561B1 (ko) 2007-09-27
WO2002003470A1 (en) 2002-01-10
KR20020064279A (ko) 2002-08-07
EP1228533B1 (de) 2008-09-03
US20020123199A1 (en) 2002-09-05

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Legal Events

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