ATE408885T1 - Magnetisches logikelement - Google Patents

Magnetisches logikelement

Info

Publication number
ATE408885T1
ATE408885T1 AT05016528T AT05016528T ATE408885T1 AT E408885 T1 ATE408885 T1 AT E408885T1 AT 05016528 T AT05016528 T AT 05016528T AT 05016528 T AT05016528 T AT 05016528T AT E408885 T1 ATE408885 T1 AT E408885T1
Authority
AT
Austria
Prior art keywords
logic element
magnetic logic
nanomagnets
field
magnetisation
Prior art date
Application number
AT05016528T
Other languages
English (en)
Inventor
Russell Cowburn
Mark Welland
Original Assignee
Cambridge Entpr Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cambridge Entpr Ltd filed Critical Cambridge Entpr Ltd
Application granted granted Critical
Publication of ATE408885T1 publication Critical patent/ATE408885T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/653—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Fe or Ni
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/743—Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks
    • G11B5/746—Bit Patterned record carriers, wherein each magnetic isolated data island corresponds to a bit
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0018—Diamagnetic or paramagnetic materials, i.e. materials with low susceptibility and no hysteresis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/009—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity bidimensional, e.g. nanoscale period nanomagnet arrays
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/16—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices
    • H03K19/168—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices using thin-film devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/82—Disk carriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12951—Fe-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Hard Magnetic Materials (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Soft Magnetic Materials (AREA)
  • Measuring Magnetic Variables (AREA)
  • Valve Device For Special Equipments (AREA)
  • Magnetic Record Carriers (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
AT05016528T 1999-04-09 2000-04-07 Magnetisches logikelement ATE408885T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9908179.6A GB9908179D0 (en) 1999-04-09 1999-04-09 Magnetic materials

Publications (1)

Publication Number Publication Date
ATE408885T1 true ATE408885T1 (de) 2008-10-15

Family

ID=10851267

Family Applications (3)

Application Number Title Priority Date Filing Date
AT04006047T ATE341821T1 (de) 1999-04-09 2000-04-07 Nanomagnetische materialien
AT00919026T ATE272889T1 (de) 1999-04-09 2000-04-07 Magnetische materialien
AT05016528T ATE408885T1 (de) 1999-04-09 2000-04-07 Magnetisches logikelement

Family Applications Before (2)

Application Number Title Priority Date Filing Date
AT04006047T ATE341821T1 (de) 1999-04-09 2000-04-07 Nanomagnetische materialien
AT00919026T ATE272889T1 (de) 1999-04-09 2000-04-07 Magnetische materialien

Country Status (15)

Country Link
US (1) US6614084B1 (de)
EP (3) EP1598834B1 (de)
JP (3) JP4287062B2 (de)
KR (1) KR100699611B1 (de)
CN (1) CN1251251C (de)
AT (3) ATE341821T1 (de)
AU (1) AU763157B2 (de)
CA (1) CA2366588A1 (de)
DE (3) DE60012720T2 (de)
DK (1) DK1169720T3 (de)
ES (1) ES2225119T3 (de)
GB (1) GB9908179D0 (de)
PT (1) PT1169720E (de)
RU (3) RU2244971C2 (de)
WO (1) WO2000062311A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9925213D0 (en) 1999-10-25 1999-12-22 Univ Cambridge Tech Magnetic logic elements
US7733350B2 (en) * 2006-06-30 2010-06-08 Microsoft Corporation Anisometric texture synthesis
US8134441B1 (en) * 2008-06-02 2012-03-13 The Regents Of The University Of California Nanomagnetic signal propagation and logic gates
US8138874B1 (en) 2009-07-20 2012-03-20 The Regents Of The University Of California Nanomagnetic register
US8432164B2 (en) 2009-10-05 2013-04-30 University Of Delaware Ferromagnetic resonance and memory effect in magnetic composite materials
US9196280B2 (en) * 2009-11-12 2015-11-24 Marquette University Low-field magnetic domain wall injection pad and high-density storage wire
KR200452028Y1 (ko) * 2010-02-23 2011-02-01 정진시그널(주) 투명 반사부를 갖는 도로 표지병
US8766754B2 (en) 2012-07-18 2014-07-01 The Regents Of The University Of California Concave nanomagnets with widely tunable anisotropy
US9460737B2 (en) 2013-04-18 2016-10-04 Headway Technologies, Inc. Supermalloy and mu metal side and top shields for magnetic read heads
FR3031622B1 (fr) * 2015-01-14 2018-02-16 Centre National De La Recherche Scientifique Point memoire magnetique
EP3782575A1 (de) * 2015-06-04 2021-02-24 Endomagnetics Ltd. Markermaterialien und -formen zur lokalisierung magnetischer marker
JP7565563B2 (ja) * 2021-05-14 2024-10-11 国立大学法人東北大学 磁気メタマテリアル、スピン流制御装置及びスピン流制御方法
CN119626285B (zh) * 2024-11-06 2025-07-18 云南大学 一种磁性纳米多环存储器件及其制备方法、应用

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873914A (en) * 1973-07-18 1975-03-25 Sperry Rand Corp Flux valve apparatus for sensing both horizontal and vertical components of an ambient magnetic field
RU2006965C1 (ru) * 1990-08-09 1994-01-30 Московский институт электронной техники Элемент памяти для долговременного оперативного запоминающего устройства
JPH0810653B2 (ja) * 1990-11-22 1996-01-31 科学技術庁金属材料技術研究所長 磁性体微粒子の配列格子構造
RU2029391C1 (ru) * 1991-06-28 1995-02-20 Тимошков Юрий Викторович Элемент памяти
US5710436A (en) 1994-09-27 1998-01-20 Kabushiki Kaisha Toshiba Quantum effect device
US5654566A (en) * 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation
RU2093905C1 (ru) * 1995-05-23 1997-10-20 Институт проблем управления РАН Переключаемый элемент с памятью
US5741435A (en) * 1995-08-08 1998-04-21 Nano Systems, Inc. Magnetic memory having shape anisotropic magnetic elements
US5714536A (en) * 1996-01-11 1998-02-03 Xerox Corporation Magnetic nanocompass compositions and processes for making and using
JPH09298320A (ja) * 1996-05-09 1997-11-18 Kobe Steel Ltd 酸化物超電導コイル用永久電流スイッチおよびそれを用いたスイッチ装置並びにスイッチング方法
RU2120142C1 (ru) * 1996-07-02 1998-10-10 Институт проблем управления РАН Магнитный инвертор
US6451220B1 (en) * 1997-01-21 2002-09-17 Xerox Corporation High density magnetic recording compositions and processes thereof
JPH10326920A (ja) * 1997-03-26 1998-12-08 Delta Tsuuring:Kk 磁気抵抗効果センサー及びその製造方法
JPH1179894A (ja) * 1997-09-04 1999-03-23 Mitsubishi Gas Chem Co Inc ビスマス置換希土類鉄ガーネット単結晶膜
US5898549A (en) * 1997-10-27 1999-04-27 International Business Machines Corporation Anti-parallel-pinned spin valve sensor with minimal pinned layer shunting
JP3216605B2 (ja) * 1998-07-06 2001-10-09 日本電気株式会社 ドットアレー状磁性膜並びにこれを用いた磁気記録媒体及び磁気抵抗効果素子
US6269018B1 (en) * 2000-04-13 2001-07-31 International Business Machines Corporation Magnetic random access memory using current through MTJ write mechanism

Also Published As

Publication number Publication date
DE60040307D1 (de) 2008-10-30
EP1598834A3 (de) 2006-05-10
EP1169720A1 (de) 2002-01-09
JP2002541614A (ja) 2002-12-03
JP4287062B2 (ja) 2009-07-01
ATE272889T1 (de) 2004-08-15
DE60012720T2 (de) 2005-08-04
KR100699611B1 (ko) 2007-03-23
RU2244971C2 (ru) 2005-01-20
CA2366588A1 (en) 2000-10-19
AU3978500A (en) 2000-11-14
AU763157B2 (en) 2003-07-17
CN1251251C (zh) 2006-04-12
WO2000062311A1 (en) 2000-10-19
RU2274917C2 (ru) 2006-04-20
DK1169720T3 (da) 2004-12-06
JP2008288580A (ja) 2008-11-27
JP2009002937A (ja) 2009-01-08
DE60012720D1 (de) 2004-09-09
EP1437746A3 (de) 2004-09-08
DE60031181D1 (de) 2006-11-16
CN1346498A (zh) 2002-04-24
EP1598834B1 (de) 2008-09-17
EP1437746B1 (de) 2006-10-04
EP1598834A2 (de) 2005-11-23
US6614084B1 (en) 2003-09-02
GB9908179D0 (en) 1999-06-02
RU2004101439A (ru) 2005-06-27
DE60031181T2 (de) 2007-08-23
ES2225119T3 (es) 2005-03-16
EP1169720B1 (de) 2004-08-04
PT1169720E (pt) 2004-11-30
RU2005112055A (ru) 2006-10-27
ATE341821T1 (de) 2006-10-15
KR20020008148A (ko) 2002-01-29
EP1437746A2 (de) 2004-07-14

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties
REN Ceased due to non-payment of the annual fee