ATE412976T1 - Optoelektronischer detektor mit mehreren ausleseknoten und verwendung dafür - Google Patents

Optoelektronischer detektor mit mehreren ausleseknoten und verwendung dafür

Info

Publication number
ATE412976T1
ATE412976T1 AT03818608T AT03818608T ATE412976T1 AT E412976 T1 ATE412976 T1 AT E412976T1 AT 03818608 T AT03818608 T AT 03818608T AT 03818608 T AT03818608 T AT 03818608T AT E412976 T1 ATE412976 T1 AT E412976T1
Authority
AT
Austria
Prior art keywords
optoelectronic detector
light
electrons
multiple reading
phase shift
Prior art date
Application number
AT03818608T
Other languages
English (en)
Inventor
Martin Waeny
Original Assignee
Mesa Imaging Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mesa Imaging Ag filed Critical Mesa Imaging Ag
Application granted granted Critical
Publication of ATE412976T1 publication Critical patent/ATE412976T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
  • Polysaccharides And Polysaccharide Derivatives (AREA)
  • Measurement Of Radiation (AREA)
  • Radar Systems Or Details Thereof (AREA)
AT03818608T 2003-09-18 2003-09-18 Optoelektronischer detektor mit mehreren ausleseknoten und verwendung dafür ATE412976T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CH2003/000629 WO2005027230A1 (en) 2003-09-18 2003-09-18 Optoelectronic detector with multiple readout nodes and its use thereof

Publications (1)

Publication Number Publication Date
ATE412976T1 true ATE412976T1 (de) 2008-11-15

Family

ID=34280699

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03818608T ATE412976T1 (de) 2003-09-18 2003-09-18 Optoelektronischer detektor mit mehreren ausleseknoten und verwendung dafür

Country Status (6)

Country Link
US (2) US7521663B2 (de)
EP (1) EP1668708B1 (de)
AT (1) ATE412976T1 (de)
AU (1) AU2003258451A1 (de)
DE (1) DE60324478D1 (de)
WO (1) WO2005027230A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE412976T1 (de) * 2003-09-18 2008-11-15 Mesa Imaging Ag Optoelektronischer detektor mit mehreren ausleseknoten und verwendung dafür
US7652273B2 (en) * 2006-07-21 2010-01-26 Andrei Cernasov Radiation attenuation device and method includes radiation attenuating fluid and directly communicating adjacent chambers
WO2010025331A1 (en) 2008-08-28 2010-03-04 Mesa Imaging Ag Demodulation pixel with daisy chain charge storage sites and method of operation therefor
ES2354113T3 (es) * 2008-11-21 2011-03-10 Sick Ag Sensor optoelectrónico y procedimiento para medir distancias según el principio del tiempo de propagacion de la luz.
AU2012352965B2 (en) 2011-12-16 2014-08-21 Li-Cor, Inc. Luminescence imaging scanner
US10016137B1 (en) 2017-11-22 2018-07-10 Hi Llc System and method for simultaneously detecting phase modulated optical signals
US10335036B2 (en) 2017-11-22 2019-07-02 Hi Llc Pulsed ultrasound modulated optical tomography using lock-in camera
US10219700B1 (en) 2017-12-15 2019-03-05 Hi Llc Systems and methods for quasi-ballistic photon optical coherence tomography in diffusive scattering media using a lock-in camera detector
US10368752B1 (en) 2018-03-08 2019-08-06 Hi Llc Devices and methods to convert conventional imagers into lock-in cameras
US11206985B2 (en) 2018-04-13 2021-12-28 Hi Llc Non-invasive optical detection systems and methods in highly scattering medium
US11857316B2 (en) 2018-05-07 2024-01-02 Hi Llc Non-invasive optical detection system and method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2164493B (en) * 1984-09-14 1989-01-18 Rca Corp Ccd structures using charge funnels
US5416318A (en) * 1991-10-03 1995-05-16 Hegyi; Dennis J. Combined headlamp and climate control sensor having a light diffuser and a light modulator
DE4440613C1 (de) 1994-11-14 1996-07-25 Leica Ag Vorrichtung und Verfahren zur Detektion und Demodulation eines intensitätsmodulierten Strahlungsfeldes
US5900654A (en) 1995-07-17 1999-05-04 Spratt; James P. Radiation hardened charge coupled device
US5754228A (en) * 1995-09-25 1998-05-19 Lockhead Martin Corporation Rapid-sequence full-frame CCD sensor
DE19704496C2 (de) * 1996-09-05 2001-02-15 Rudolf Schwarte Verfahren und Vorrichtung zur Bestimmung der Phasen- und/oder Amplitudeninformation einer elektromagnetischen Welle
RU2182385C2 (ru) 1996-09-05 2002-05-10 Рудольф ШВАРТЕ Способ и устройство для определения информации об амплитуде и фазе электромагнитной волны
EP2397875A3 (de) 2001-12-14 2012-05-02 QUALCOMM MEMS Technologies, Inc. Einförmiges Beleuchtungssystem
CN1312489C (zh) 2002-07-15 2007-04-25 松下电工株式会社 具有可控灵敏度的光接收设备及其空间信息检测装置
ATE412976T1 (de) * 2003-09-18 2008-11-15 Mesa Imaging Ag Optoelektronischer detektor mit mehreren ausleseknoten und verwendung dafür
WO2006129316A1 (en) * 2005-05-31 2006-12-07 Zamir Recognition Systems Ltd. Light sensitive system and method for attenuating the effect of ambient light

Also Published As

Publication number Publication date
AU2003258451A1 (en) 2005-04-06
US7622704B2 (en) 2009-11-24
US20090173874A1 (en) 2009-07-09
US20070176079A1 (en) 2007-08-02
EP1668708B1 (de) 2008-10-29
EP1668708A1 (de) 2006-06-14
US7521663B2 (en) 2009-04-21
WO2005027230A1 (en) 2005-03-24
DE60324478D1 (de) 2008-12-11

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