ATE413729T1 - Mos-transistorschaltung mit gesteuerter anstiegszeit - Google Patents

Mos-transistorschaltung mit gesteuerter anstiegszeit

Info

Publication number
ATE413729T1
ATE413729T1 AT06013945T AT06013945T ATE413729T1 AT E413729 T1 ATE413729 T1 AT E413729T1 AT 06013945 T AT06013945 T AT 06013945T AT 06013945 T AT06013945 T AT 06013945T AT E413729 T1 ATE413729 T1 AT E413729T1
Authority
AT
Austria
Prior art keywords
mos transistor
control
rise time
signal
transistor circuit
Prior art date
Application number
AT06013945T
Other languages
English (en)
Inventor
Fabrizio Cortigiani
Gianluca Ragonesi
Silvia Solda
Franco Mignoli
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Application granted granted Critical
Publication of ATE413729T1 publication Critical patent/ATE413729T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Landscapes

  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
AT06013945T 2006-07-05 2006-07-05 Mos-transistorschaltung mit gesteuerter anstiegszeit ATE413729T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06013945A EP1906532B1 (de) 2006-07-05 2006-07-05 MOS-Transistorschaltung mit gesteuerter Anstiegszeit

Publications (1)

Publication Number Publication Date
ATE413729T1 true ATE413729T1 (de) 2008-11-15

Family

ID=37622163

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06013945T ATE413729T1 (de) 2006-07-05 2006-07-05 Mos-transistorschaltung mit gesteuerter anstiegszeit

Country Status (4)

Country Link
US (1) US7649364B2 (de)
EP (1) EP1906532B1 (de)
AT (1) ATE413729T1 (de)
DE (1) DE602006003564D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009057544A1 (de) * 2009-12-09 2011-06-16 Eads Deutschland Gmbh Begrenzerschaltung
US8493146B2 (en) * 2011-03-10 2013-07-23 Silicon Laboratories Inc. Amplifier using fast discharging reference
CN102934339B (zh) * 2011-06-02 2015-03-11 丰田自动车株式会社 对电压驱动型元件进行驱动的驱动装置
US9678139B2 (en) * 2011-12-22 2017-06-13 Continental Automotive Systems, Inc. Method and apparatus for high side transistor protection
US9184748B2 (en) * 2011-12-30 2015-11-10 Stmicroelectronics International N.V. Adaptive buffer
TW201426237A (zh) * 2012-12-18 2014-07-01 Richtek Technology Corp 電流控制電路與電流控制方法
EP3017542B1 (de) * 2013-07-04 2019-09-11 NXP USA, Inc. Gate-treiberschaltung und verfahren zur steuerung eines leistungstransistors
EP3057231B1 (de) * 2015-02-16 2019-04-10 Power Integrations Switzerland GmbH Steuerschaltung und Steuerverfahren zum Anschalten eines Leistungshalbleiterschalters
CN105048791B (zh) * 2015-07-22 2017-09-22 深圳市稳先微电子有限公司 功率管控制系统和用于开关电源的外置功率管驱动电路
CN107134992A (zh) * 2017-06-29 2017-09-05 合肥灿芯科技有限公司 输入输出驱动电路
CN116301169B (zh) * 2023-05-23 2023-08-15 芯动微电子科技(珠海)有限公司 一种偏置电路和比较器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3123349B2 (ja) * 1994-06-29 2001-01-09 富士電機株式会社 半導体装置の制御回路
JP3421507B2 (ja) 1996-07-05 2003-06-30 三菱電機株式会社 半導体素子の駆動回路
US6278305B1 (en) * 1998-02-09 2001-08-21 Matsushita Electric Industrial, Ltd. Semiconductor integrated circuit
DE19836577C1 (de) * 1998-08-12 2000-04-20 Siemens Ag Leistungsschaltkreis mit verminderter Störstrahlung
EP1127409B1 (de) 1998-10-30 2014-04-23 Continental Automotive Systems US, Inc. Kombinierte spannungs- und stromanstiegsbegrenzung
DE19855604C5 (de) 1998-12-02 2004-04-15 Siemens Ag Verfahren und Vorrichtung zum Ansteuern einer Leistungsendstufe
US6163178A (en) * 1998-12-28 2000-12-19 Rambus Incorporated Impedance controlled output driver
FR2796777B1 (fr) * 1999-07-20 2001-09-21 St Microelectronics Sa Commande d'un transistor mos de puissance
US6985341B2 (en) * 2001-04-24 2006-01-10 Vlt, Inc. Components having actively controlled circuit elements
DE10143432C1 (de) * 2001-09-05 2003-02-27 Daimler Chrysler Ag Treiberschaltung und Ansteuerverfahren für einen feldgesteuerten Leistungsschalter
DE10240167C5 (de) 2002-08-30 2010-01-21 Infineon Technologies Ag Schaltungsanordnung mit einem Leistungstransistor und einer Ansteuerschaltung für den Leistungstransistor
JP2004215458A (ja) * 2003-01-08 2004-07-29 Mitsubishi Electric Corp 半導体スイッチング素子の駆動回路
JP3799341B2 (ja) * 2003-07-25 2006-07-19 株式会社東芝 ゲート駆動回路及び半導体装置

Also Published As

Publication number Publication date
DE602006003564D1 (de) 2008-12-18
EP1906532A1 (de) 2008-04-02
US20080068059A1 (en) 2008-03-20
EP1906532B1 (de) 2008-11-05
US7649364B2 (en) 2010-01-19

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