ATE416477T1 - Verfahren und system zur reinigung eines substrats und programmspeichermedium - Google Patents

Verfahren und system zur reinigung eines substrats und programmspeichermedium

Info

Publication number
ATE416477T1
ATE416477T1 AT07009836T AT07009836T ATE416477T1 AT E416477 T1 ATE416477 T1 AT E416477T1 AT 07009836 T AT07009836 T AT 07009836T AT 07009836 T AT07009836 T AT 07009836T AT E416477 T1 ATE416477 T1 AT E416477T1
Authority
AT
Austria
Prior art keywords
cleaning
substrate
cleaning liquid
storage medium
program storage
Prior art date
Application number
AT07009836T
Other languages
English (en)
Inventor
Tsukasa Watanabe
Naoki Shindo
Koukichi Hiroshiro
Yuji Kamikawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of ATE416477T1 publication Critical patent/ATE416477T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0416—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Liquid Crystal (AREA)
AT07009836T 2006-05-19 2007-05-16 Verfahren und system zur reinigung eines substrats und programmspeichermedium ATE416477T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006140377A JP4705517B2 (ja) 2006-05-19 2006-05-19 基板洗浄方法、基板洗浄装置、プログラム、および記録媒体

Publications (1)

Publication Number Publication Date
ATE416477T1 true ATE416477T1 (de) 2008-12-15

Family

ID=38472834

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07009836T ATE416477T1 (de) 2006-05-19 2007-05-16 Verfahren und system zur reinigung eines substrats und programmspeichermedium

Country Status (7)

Country Link
US (1) US8152928B2 (de)
EP (1) EP1858059B1 (de)
JP (1) JP4705517B2 (de)
KR (1) KR101049842B1 (de)
AT (1) ATE416477T1 (de)
DE (1) DE602007000315D1 (de)
TW (1) TW200818282A (de)

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JP2009231579A (ja) * 2008-03-24 2009-10-08 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
JP5666086B2 (ja) 2008-12-25 2015-02-12 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ シリコンウェハ洗浄装置
US8404056B1 (en) 2009-05-27 2013-03-26 WD Media, LLC Process control for a sonication cleaning tank
US8863763B1 (en) 2009-05-27 2014-10-21 WD Media, LLC Sonication cleaning with a particle counter
TWI490931B (zh) * 2009-10-05 2015-07-01 Tokyo Electron Ltd 超音波清洗裝置、超音波清洗方法、及記錄有用來執行此超音波清洗方法之電腦程式的記錄媒體
CN102029273B (zh) * 2009-10-05 2015-09-16 东京毅力科创株式会社 超声波清洗装置、超声波清洗方法
TW201330084A (zh) * 2012-01-13 2013-07-16 Smartron Co Ltd 晶片清洗裝置及其工序方法
JP5894858B2 (ja) * 2012-05-24 2016-03-30 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 超音波洗浄方法
JP5872382B2 (ja) * 2012-05-24 2016-03-01 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 超音波洗浄方法
US9174249B2 (en) * 2012-12-12 2015-11-03 Lam Research Corporation Ultrasonic cleaning method and apparatus therefore
US9070631B2 (en) * 2013-03-14 2015-06-30 Mei Llc Metal liftoff tools and methods
JP6329342B2 (ja) * 2013-06-07 2018-05-23 株式会社ダルトン 洗浄方法及び洗浄装置
US9562291B2 (en) 2014-01-14 2017-02-07 Mei, Llc Metal etch system
JP6090184B2 (ja) * 2014-01-27 2017-03-08 信越半導体株式会社 半導体ウェーハの洗浄槽及び貼り合わせウェーハの製造方法
US10522369B2 (en) * 2015-02-26 2019-12-31 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for cleaning wafer and scrubber
EP3515611B1 (de) 2016-09-19 2025-12-31 ACM Research (Shanghai) Inc. Verfahren und vorrichtung zur reinigung von substraten
KR102658739B1 (ko) * 2017-05-03 2024-04-17 램 리써치 코포레이션 컨디셔닝 챔버 컴포넌트
JP6977845B1 (ja) * 2020-09-30 2021-12-08 栗田工業株式会社 電子部品・部材の洗浄水供給装置及び電子部品・部材の洗浄水の供給方法
JP7111386B2 (ja) * 2020-12-25 2022-08-02 アスカコーポレーション株式会社 無電解めっき装置
JP7583651B2 (ja) * 2021-03-11 2024-11-14 キオクシア株式会社 基板洗浄装置および基板洗浄方法
KR102736551B1 (ko) * 2021-09-22 2024-11-29 가부시키가이샤 스크린 홀딩스 기판 처리 방법 및 기판 처리 장치

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JPH0831783A (ja) * 1994-07-14 1996-02-02 Fujitsu Ltd 基板のダイシング方法とその装置
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JP3851486B2 (ja) * 2000-03-27 2006-11-29 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2001284306A (ja) * 2000-03-28 2001-10-12 Toshiba Corp 基板洗浄装置および基板洗浄方法
JP2002093765A (ja) * 2000-09-20 2002-03-29 Kaijo Corp 基板洗浄方法および基板洗浄装置
US6532974B2 (en) * 2001-04-06 2003-03-18 Akrion Llc Process tank with pressurized mist generation
US20020166569A1 (en) * 2001-05-10 2002-11-14 Speedfam-Ipec Corporation Method and apparatus for semiconductor wafer cleaning
JP4319445B2 (ja) * 2002-06-20 2009-08-26 大日本スクリーン製造株式会社 基板処理装置
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EP1736568A4 (de) * 2004-04-15 2011-01-12 Tokyo Electron Ltd Flüssigkeitsbehandlungsvorrichtung und flüssigkeitsbehandlungsverfahren
JP2006066793A (ja) * 2004-08-30 2006-03-09 Naoetsu Electronics Co Ltd ウエハ洗浄方法及びその装置
JP2006108512A (ja) * 2004-10-07 2006-04-20 Ses Co Ltd 基板処理装置
JP4490780B2 (ja) * 2004-10-07 2010-06-30 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
TWI262827B (en) * 2005-12-13 2006-10-01 Ind Tech Res Inst Cleaning device and method of bubble reaction

Also Published As

Publication number Publication date
KR101049842B1 (ko) 2011-07-15
US20070267040A1 (en) 2007-11-22
DE602007000315D1 (de) 2009-01-15
EP1858059A1 (de) 2007-11-21
US8152928B2 (en) 2012-04-10
TWI342040B (de) 2011-05-11
TW200818282A (en) 2008-04-16
EP1858059B1 (de) 2008-12-03
JP4705517B2 (ja) 2011-06-22
KR20070111973A (ko) 2007-11-22
JP2007311631A (ja) 2007-11-29

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