ATE417942T1 - Verbesserte formulierung von co-basierte legierungszusammensetzungen - Google Patents

Verbesserte formulierung von co-basierte legierungszusammensetzungen

Info

Publication number
ATE417942T1
ATE417942T1 AT05258043T AT05258043T ATE417942T1 AT E417942 T1 ATE417942 T1 AT E417942T1 AT 05258043 T AT05258043 T AT 05258043T AT 05258043 T AT05258043 T AT 05258043T AT E417942 T1 ATE417942 T1 AT E417942T1
Authority
AT
Austria
Prior art keywords
representing
base metal
based alloy
alloy compositions
formula
Prior art date
Application number
AT05258043T
Other languages
English (en)
Inventor
Abdelouahab Ziani
Original Assignee
Heraeus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Inc filed Critical Heraeus Inc
Application granted granted Critical
Publication of ATE417942T1 publication Critical patent/ATE417942T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0433—Nickel- or cobalt-based alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C22C32/001—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides
    • C22C32/0015—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with only oxides with only single oxides as main non-metallic constituents
    • C22C32/0026—Matrix based on Ni, Co, Cr or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Chemically Coating (AREA)
  • Physical Vapour Deposition (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Removal Of Specific Substances (AREA)
AT05258043T 2005-04-18 2005-12-23 Verbesserte formulierung von co-basierte legierungszusammensetzungen ATE417942T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US67260205P 2005-04-18 2005-04-18
US11/237,938 US7494617B2 (en) 2005-04-18 2005-09-29 Enhanced formulation of cobalt alloy matrix compositions

Publications (1)

Publication Number Publication Date
ATE417942T1 true ATE417942T1 (de) 2009-01-15

Family

ID=36648294

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05258043T ATE417942T1 (de) 2005-04-18 2005-12-23 Verbesserte formulierung von co-basierte legierungszusammensetzungen

Country Status (8)

Country Link
US (2) US7494617B2 (de)
EP (1) EP1715069B1 (de)
JP (1) JP2006299401A (de)
KR (1) KR20060109817A (de)
AT (1) ATE417942T1 (de)
DE (1) DE602005011760D1 (de)
SG (1) SG126813A1 (de)
TW (1) TW200637922A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070189916A1 (en) * 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
JP4580817B2 (ja) * 2005-05-27 2010-11-17 株式会社東芝 垂直磁気記録媒体及び垂直磁気記録再生装置
KR20090103869A (ko) 2006-11-02 2009-10-01 메루샹가부시키가이샤 세라미드 합성 촉진제, 화장료, 피부 외용제, 노화 방지 방법 및 주름 개선방법
CN100441345C (zh) * 2007-01-04 2008-12-10 北京科技大学 一种制备钨和铝掺杂二硅化钼粉末的方法
US7879470B2 (en) * 2007-11-15 2011-02-01 Hitachi Global Storage Technologies Netherlands B.V. Apparatus, system, and method for the selection of perpendicular media segregant materials
JP5250838B2 (ja) 2009-01-27 2013-07-31 昭和電工株式会社 磁気記録媒体の製造方法及び磁気記録媒体、並びに磁気記録再生装置
JP2011021254A (ja) * 2009-07-16 2011-02-03 Solar Applied Materials Technology Corp ホウ素を含むスパッタリングターゲットの製造方法、薄膜及び磁気記録媒体
MY148731A (en) * 2009-08-06 2013-05-31 Jx Nippon Mining & Metals Corp Inorganic-particle-dispersed sputtering target
CN104126026B (zh) 2012-02-23 2016-03-23 吉坤日矿日石金属株式会社 含有铬氧化物的强磁性材料溅射靶
CN104278202B (zh) * 2014-05-24 2016-08-24 宁国市南方耐磨材料有限公司 一种涂层耐磨球
US9042053B1 (en) 2014-06-24 2015-05-26 WD Media, LLC Thermally stabilized perpendicular magnetic recording medium
CN104174851B (zh) * 2014-08-12 2016-05-18 贵研铂业股份有限公司 一种Co-Cr-Pt-SiO2靶材的制备方法
TWI671418B (zh) * 2017-09-21 2019-09-11 日商Ｊｘ金屬股份有限公司 濺鍍靶、積層膜之製造方法、積層膜及磁記錄媒體
TWI679291B (zh) 2017-09-21 2019-12-11 日商Ｊｘ金屬股份有限公司 濺鍍靶、積層膜之製造方法、積層膜及磁記錄媒體
CN112126806B (zh) * 2020-09-15 2021-07-09 承德天大钒业有限责任公司 一种铝钼铬铁硅中间合金的制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5765923A (en) * 1992-06-05 1998-06-16 Sunburst Excavation, Inc. Cartridge for generating high-pressure gases in a drill hole
JPH0620250A (ja) 1992-06-30 1994-01-28 Sony Corp 垂直磁気記録媒体及びその製造方法
US5763923A (en) 1996-08-13 1998-06-09 Micron Technology, Inc. Compound PVD target material for semiconductor metallization
US6268024B1 (en) 1998-03-26 2001-07-31 Toda Kogyo Corporation Process for producing magnetic recording medium
US6797137B2 (en) 2001-04-11 2004-09-28 Heraeus, Inc. Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal
SG115476A1 (en) 2001-05-23 2005-10-28 Showa Denko Kk Magnetic recording medium, method of manufacturing therefor and magnetic replay apparatus
JP2003228815A (ja) 2002-01-31 2003-08-15 Toshiba Corp 垂直磁気記録媒体、及びそれを用いた磁気記録再生装置
JP2003346317A (ja) 2002-05-23 2003-12-05 Fuji Photo Film Co Ltd 垂直磁気記録媒体
US20030228238A1 (en) 2002-06-07 2003-12-11 Wenjun Zhang High-PTF sputtering targets and method of manufacturing
US6759005B2 (en) 2002-07-23 2004-07-06 Heraeus, Inc. Fabrication of B/C/N/O/Si doped sputtering targets
US7354630B2 (en) 2003-11-06 2008-04-08 Seagate Technology Llc Use of oxygen-containing gases in fabrication of granular perpendicular magnetic recording media
JP2005276367A (ja) 2004-03-25 2005-10-06 Toshiba Corp 垂直磁気記録媒体及び磁気記録再生装置
US20050277002A1 (en) 2004-06-15 2005-12-15 Heraeus, Inc. Enhanced sputter target alloy compositions

Also Published As

Publication number Publication date
US20090120237A1 (en) 2009-05-14
DE602005011760D1 (de) 2009-01-29
SG126813A1 (en) 2006-11-29
HK1091235A1 (en) 2007-01-12
JP2006299401A (ja) 2006-11-02
TW200637922A (en) 2006-11-01
US20060233658A1 (en) 2006-10-19
KR20060109817A (ko) 2006-10-23
EP1715069A1 (de) 2006-10-25
EP1715069B1 (de) 2008-12-17
US7494617B2 (en) 2009-02-24

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