ATE419650T1 - Herstellungsverfahren eines halbleiterfestwertspeichers - Google Patents

Herstellungsverfahren eines halbleiterfestwertspeichers

Info

Publication number
ATE419650T1
ATE419650T1 AT03718996T AT03718996T ATE419650T1 AT E419650 T1 ATE419650 T1 AT E419650T1 AT 03718996 T AT03718996 T AT 03718996T AT 03718996 T AT03718996 T AT 03718996T AT E419650 T1 ATE419650 T1 AT E419650T1
Authority
AT
Austria
Prior art keywords
conductors
memory
active regions
planarized
conductive layer
Prior art date
Application number
AT03718996T
Other languages
English (en)
Inventor
Schaijk Robertus Van
Michiel Slotboom
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE419650T1 publication Critical patent/ATE419650T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT03718996T 2002-05-07 2003-05-05 Herstellungsverfahren eines halbleiterfestwertspeichers ATE419650T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02076830 2002-05-07

Publications (1)

Publication Number Publication Date
ATE419650T1 true ATE419650T1 (de) 2009-01-15

Family

ID=29414763

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03718996T ATE419650T1 (de) 2002-05-07 2003-05-05 Herstellungsverfahren eines halbleiterfestwertspeichers

Country Status (10)

Country Link
US (1) US6991982B2 (de)
EP (1) EP1506574B1 (de)
JP (1) JP2005524992A (de)
KR (1) KR20040111581A (de)
CN (1) CN1315181C (de)
AT (1) ATE419650T1 (de)
AU (1) AU2003223028A1 (de)
DE (1) DE60325581D1 (de)
TW (1) TWI289343B (de)
WO (1) WO2003096413A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100683389B1 (ko) * 2005-09-20 2007-02-15 동부일렉트로닉스 주식회사 플래시 메모리의 셀 트랜지스터 및 그 제조 방법
CN100481398C (zh) * 2006-11-03 2009-04-22 力晶半导体股份有限公司 存储器的制造方法及半导体元件的制造方法
CN100578669C (zh) * 2008-01-28 2010-01-06 南京航空航天大学 一种非易失存储器
US10797063B2 (en) * 2018-01-10 2020-10-06 Ememory Technology Inc. Single-poly nonvolatile memory unit
CN114078744B (zh) * 2020-08-12 2025-02-18 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5712180A (en) * 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
US6063702A (en) * 1997-01-27 2000-05-16 Chartered Semiconductor Manufacturing, Ltd. Global planarization method for inter level dielectric layers using IDL blocks
JP2002539609A (ja) * 1999-03-10 2002-11-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ バイポーラトランジスタとコンデンサとを有する半導体装置を製造する方法
TW484228B (en) * 1999-08-31 2002-04-21 Toshiba Corp Non-volatile semiconductor memory device and the manufacturing method thereof
EP1183732A1 (de) * 2000-03-08 2002-03-06 Koninklijke Philips Electronics N.V. Halbleiterbauelement und dessen herstellungsverfahren
GB0018028D0 (en) * 2000-07-24 2000-09-13 Koninkl Philips Electronics Nv Semiconductor devices and their manufacture
US6512263B1 (en) * 2000-09-22 2003-01-28 Sandisk Corporation Non-volatile memory cell array having discontinuous source and drain diffusions contacted by continuous bit line conductors and methods of forming

Also Published As

Publication number Publication date
CN1653609A (zh) 2005-08-10
EP1506574A1 (de) 2005-02-16
US20050207209A1 (en) 2005-09-22
TW200401410A (en) 2004-01-16
CN1315181C (zh) 2007-05-09
WO2003096413A1 (en) 2003-11-20
DE60325581D1 (de) 2009-02-12
US6991982B2 (en) 2006-01-31
AU2003223028A1 (en) 2003-11-11
EP1506574B1 (de) 2008-12-31
KR20040111581A (ko) 2004-12-31
TWI289343B (en) 2007-11-01
JP2005524992A (ja) 2005-08-18

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