ATE420941T1 - Chemische spülzusammensetzung - Google Patents

Chemische spülzusammensetzung

Info

Publication number
ATE420941T1
ATE420941T1 AT02788952T AT02788952T ATE420941T1 AT E420941 T1 ATE420941 T1 AT E420941T1 AT 02788952 T AT02788952 T AT 02788952T AT 02788952 T AT02788952 T AT 02788952T AT E420941 T1 ATE420941 T1 AT E420941T1
Authority
AT
Austria
Prior art keywords
thinner composition
resist
tft
manufacturing processes
ionic surfactant
Prior art date
Application number
AT02788952T
Other languages
English (en)
Inventor
Yung-Bae Chai
Si-Myung Choi
Jae-Sung Ro
Jung-Sun Choi
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of ATE420941T1 publication Critical patent/ATE420941T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02Inorganic compounds ; Elemental compounds
    • C11D3/04Water-soluble compounds
    • C11D3/044Hydroxides or bases
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66Non-ionic compounds
    • C11D1/83Mixtures of non-ionic with anionic compounds
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02Inorganic compounds ; Elemental compounds
    • C11D3/04Water-soluble compounds
    • C11D3/08Silicates
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02Inorganic compounds ; Elemental compounds
    • C11D3/04Water-soluble compounds
    • C11D3/10Carbonates ; Bicarbonates
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2068Ethers
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/26Organic compounds containing nitrogen
    • C11D3/28Heterocyclic compounds containing nitrogen in the ring
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/26Organic compounds containing nitrogen
    • C11D3/30Amines; Substituted amines ; Quaternized amines
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/02Anionic compounds
    • C11D1/12Sulfonic acids or sulfuric acid esters; Salts thereof
    • C11D1/14Sulfonic acids or sulfuric acid esters; Salts thereof derived from aliphatic hydrocarbons or mono-alcohols
    • C11D1/146Sulfuric acid esters
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/66Non-ionic compounds
    • C11D1/72Ethers of polyoxyalkylene glycols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/322Aqueous alkaline compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Materials For Medical Uses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
AT02788952T 2001-11-13 2002-11-13 Chemische spülzusammensetzung ATE420941T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020010070364A KR100646793B1 (ko) 2001-11-13 2001-11-13 씬너 조성물

Publications (1)

Publication Number Publication Date
ATE420941T1 true ATE420941T1 (de) 2009-01-15

Family

ID=19715928

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02788952T ATE420941T1 (de) 2001-11-13 2002-11-13 Chemische spülzusammensetzung

Country Status (8)

Country Link
US (1) US7063930B2 (de)
EP (1) EP1451642B1 (de)
JP (1) JP4225909B2 (de)
KR (1) KR100646793B1 (de)
CN (1) CN1302342C (de)
AT (1) ATE420941T1 (de)
DE (1) DE60230911D1 (de)
WO (1) WO2003042762A1 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100485737B1 (ko) * 2001-11-27 2005-04-27 주식회사 동진쎄미켐 레지스트 제거용 신너 조성물
AU2003287660A1 (en) * 2002-11-15 2004-06-15 E.I. Du Pont De Nemours And Company Process for using protective layers in the fabrication of electronic devices
US20040170925A1 (en) * 2002-12-06 2004-09-02 Roach David Herbert Positive imageable thick film compositions
US7078162B2 (en) * 2003-10-08 2006-07-18 Eastman Kodak Company Developer regenerators
US7402373B2 (en) * 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes
KR100571721B1 (ko) * 2004-02-10 2006-04-17 삼성전자주식회사 신너 조성물 및 이를 이용한 포토레지스트의 제거 방법
JP4524744B2 (ja) * 2004-04-14 2010-08-18 日本電気株式会社 有機マスクの形成方法及び該有機マスクを利用したパターン形成方法
CN1973247A (zh) * 2004-05-27 2007-05-30 纳幕尔杜邦公司 光聚合物保护层的显影剂
JP4830445B2 (ja) * 2004-11-15 2011-12-07 Jsr株式会社 金属製容器の洗浄方法及び樹脂成形品の洗浄方法
US7462586B2 (en) 2005-02-15 2008-12-09 Scican Ltd. Method of cleaning dental and medical instruments using anti corrosion detergent compositions
KR101184381B1 (ko) * 2005-05-11 2012-09-20 매그나칩 반도체 유한회사 반도체 소자의 금속배선 형성방법
KR101175225B1 (ko) * 2005-06-07 2012-08-21 매그나칩 반도체 유한회사 반도체 소자의 패턴 형성방법 및 이를 이용한 금속배선형성방법
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
KR100945157B1 (ko) * 2008-01-04 2010-03-08 주식회사 켐트로닉스 티에프티 엘씨디용 칼라 레지스트 박리액 조성물
JP5052450B2 (ja) * 2008-07-30 2012-10-17 富士フイルム株式会社 着色感光性組成物用アルカリ現像液、画像形成方法、カラーフイルタ、および液晶表示装置
CN101359189B (zh) * 2008-09-17 2011-04-27 电子科技大学 正性光敏聚酰亚胺光刻胶用显影液
CN101520612B (zh) * 2009-04-01 2011-12-21 苏州瑞红电子化学品有限公司 彩色光刻胶的清洗剂
CN101818103B (zh) * 2010-05-17 2012-05-02 江西瑞思博化工有限公司 电子材料清洗剂
CN104629933A (zh) * 2013-11-11 2015-05-20 青岛锦涟鑫商贸有限公司 一种织物用杀菌清洗剂
KR101554103B1 (ko) * 2014-06-10 2015-09-17 동우 화인켐 주식회사 레지스트 도포성 개선용 및 제거용 신너 조성물
EP3187559B1 (de) * 2014-08-08 2021-02-17 Toray Industries, Inc. Klebstoff zum temporären bonden, haftschicht, verfahren zur herstellung eines wafer-werkstücks und halbleiterbauelement damit, nachbearbeitungslösungsmittel, polyimidcopolymer, gemischtes polyimidharz und harzzusammensetzung
US9482957B1 (en) * 2015-06-15 2016-11-01 I-Shan Ke Solvent for reducing resist consumption and method using solvent for reducing resist consumption
CN108192764A (zh) * 2015-06-29 2018-06-22 泉州东行贸易有限公司 一种清洗液的制备方法
CN105505630A (zh) * 2015-12-07 2016-04-20 苏州市晶协高新电子材料有限公司 一种半导体工艺中用的表面处理剂及方法
CN105527804A (zh) * 2016-03-09 2016-04-27 长沙晟辉新材料有限公司 一种低温型水系正性光阻剥离液
TWI725162B (zh) * 2016-04-08 2021-04-21 日商富士軟片股份有限公司 處理液、其製造方法、圖案形成方法及電子器件的製造方法
JP6860276B2 (ja) 2016-09-09 2021-04-14 花王株式会社 樹脂マスク剥離用洗浄剤組成物
CN108863104B (zh) * 2017-05-10 2021-11-23 蓝思科技(长沙)有限公司 玻璃退镀剂及玻璃退镀工艺
JP2019038192A (ja) * 2017-08-25 2019-03-14 花王株式会社 三次元物体前駆体処理剤組成物
JP7057653B2 (ja) 2017-12-08 2022-04-20 花王株式会社 樹脂マスク剥離用洗浄剤組成物
JP7020905B2 (ja) * 2017-12-27 2022-02-16 花王株式会社 樹脂マスク剥離用洗浄剤組成物
CN108227410A (zh) * 2018-03-15 2018-06-29 昆山长优电子材料有限公司 显影辅助剂
CN108319118A (zh) * 2018-03-15 2018-07-24 昆山长优电子材料有限公司 有机剥膜液
US11456170B2 (en) * 2019-04-15 2022-09-27 Taiwan Semiconductor Manufacturing Co., Ltd. Cleaning solution and method of cleaning wafer
CN110684602A (zh) * 2019-09-19 2020-01-14 江华飞信达科技有限公司 一种lcd基板清洗剂及其使用方法
JP7629284B2 (ja) * 2020-09-04 2025-02-13 花王株式会社 樹脂マスク剥離用洗浄剤組成物
CN117157198A (zh) * 2021-05-03 2023-12-01 陶氏环球技术有限责任公司 溶剂组合物

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63231343A (ja) 1987-03-20 1988-09-27 Hitachi Ltd レジストパタ−ンの剥離液
JP3449651B2 (ja) 1994-09-16 2003-09-22 東京応化工業株式会社 レジスト剥離液組成物
US5593504A (en) * 1995-04-26 1997-01-14 Church & Dwight Co., Inc. Method of cleaning solder pastes from a substrate with an aqueous cleaner
US5962197A (en) 1998-03-27 1999-10-05 Analyze Inc. Alkaline organic photoresist stripper
US6080531A (en) * 1998-03-30 2000-06-27 Fsi International, Inc. Organic removal process
DE19845605A1 (de) * 1998-10-05 2000-04-06 Agfa Gevaert Ag Konzentrat und daraus hergestellter wäßriger Entwickler für bildmäßig bestrahlte Aufzeichnungsmaterialien
TW546553B (en) * 1998-12-25 2003-08-11 Tokyo Ohka Kogyo Co Ltd Photoresist stripping liquid composition and a method of stripping photoresists using the same
KR100286860B1 (ko) * 1998-12-31 2001-07-12 주식회사 동진쎄미켐 포토레지스트 리무버 조성물
KR100348434B1 (ko) * 2000-01-14 2002-08-10 주식회사 동진쎄미켐 레지스트 리무버 조성물
US6475966B1 (en) * 2000-02-25 2002-11-05 Shipley Company, L.L.C. Plasma etching residue removal
US6417147B2 (en) * 2000-02-29 2002-07-09 Showa Denko K.K. Cleaning agent composition, method for cleaning and use thereof
US6274296B1 (en) * 2000-06-08 2001-08-14 Shipley Company, L.L.C. Stripper pretreatment
JP2002075993A (ja) * 2000-06-15 2002-03-15 Mitsubishi Electric Corp 半導体装置の製造方法
KR20010113396A (ko) * 2000-06-19 2001-12-28 주식회사 동진쎄미켐 암모늄 플로라이드를 함유하는 포토레지스트 리무버 조성물
KR20020063096A (ko) 2001-01-26 2002-08-01 동우 화인켐 주식회사 포토레지스트의 에지 비드를 제거하는 세정용액 및 이를이용한 세정방법
KR100756552B1 (ko) * 2001-06-23 2007-09-07 주식회사 동진쎄미켐 씬너 조성물

Also Published As

Publication number Publication date
EP1451642B1 (de) 2009-01-14
US7063930B2 (en) 2006-06-20
JP2005509693A (ja) 2005-04-14
WO2003042762A1 (en) 2003-05-22
KR100646793B1 (ko) 2006-11-17
US20050058953A1 (en) 2005-03-17
KR20030052245A (ko) 2003-06-27
EP1451642A4 (de) 2005-08-17
EP1451642A1 (de) 2004-09-01
CN1585914A (zh) 2005-02-23
DE60230911D1 (de) 2009-03-05
CN1302342C (zh) 2007-02-28
JP4225909B2 (ja) 2009-02-18

Similar Documents

Publication Publication Date Title
ATE420941T1 (de) Chemische spülzusammensetzung
ATE436043T1 (de) Alkalische, silikat enthaltende reinigungslösungen für mikroelektronische substrate
KR100504979B1 (ko) 비부식성 스트리핑 및 세정 조성물
US6773873B2 (en) pH buffered compositions useful for cleaning residue from semiconductor substrates
US5780406A (en) Non-corrosive cleaning composition for removing plasma etching residues
WO2002004233A8 (en) Compositions for cleaning organic and plasma etched residues for semiconductor devices
DE60129465D1 (de) 1,3-dicarbonylverbindungen enthaltende halbleiterstrippzusammensetzung
AU2001296947A1 (en) Stabilized alkaline compositions for cleaning microelectronic substrates
DE60238258D1 (de) Ammoniak-freie fluorid-salze enthaltende mikroelectronikreinigunsmittel
AR021462A1 (es) Composiciones acuosas alcalinas de limpieza y tratamiento de superficies duras.
KR101668126B1 (ko) 포토레지스트 박리제 조성물 및 포토레지스트 박리 방법
DE60323143D1 (de) Aufüberkritischem kohlenstoffdioxid beruhende formulierung für die entfernung von gegebenenfalls veraschten aluminiumresten nach dem ätzen
AU4980300A (en) Compositions for cleaning organic and plasma etched residues for semiconductor devices
JP3389166B2 (ja) レジスト用剥離液組成物
KR101595977B1 (ko) 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법
JPWO2009072529A1 (ja) 半導体デバイス用基板の洗浄方法及び洗浄液
KR20010086161A (ko) 비부식성 세정 조성물 및 플라즈마 에칭 잔류물의 제거방법
JPH09319098A (ja) レジスト膜用剥離液
US6197733B1 (en) Photoresist ashing residue cleaning agent
DE60238244D1 (de) Wässriges reinigungsmittel mit kupferspezifischem korrosionsschutzmittel zur abreinigung anorganischer reste von halbleitersubstraten
WO1998030667A1 (en) Semiconductor wafer cleaning composition and method with aqueous ammonium fluoride and amine
WO2006052692A3 (en) Post etch cleaning composition for use with substrates having aluminum
WO2023157655A1 (ja) 組成物、化合物、樹脂、基板の処理方法、半導体デバイスの製造方法
KR20030082767A (ko) 수용액에서의 전해질의 전기전도도가 높은 물질을 이용한레지스트 박리액 조성물
TWI793500B (zh) 用於移除光阻的剝離劑組合物及使用其的光阻剝離方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties