ATE421149T1 - Integrierte schaltung mit einer selbsttesteinrichtung für einen eingebetteten nichtflüchtigen speicher und verwandte testverfahren - Google Patents
Integrierte schaltung mit einer selbsttesteinrichtung für einen eingebetteten nichtflüchtigen speicher und verwandte testverfahrenInfo
- Publication number
- ATE421149T1 ATE421149T1 AT02724563T AT02724563T ATE421149T1 AT E421149 T1 ATE421149 T1 AT E421149T1 AT 02724563 T AT02724563 T AT 02724563T AT 02724563 T AT02724563 T AT 02724563T AT E421149 T1 ATE421149 T1 AT E421149T1
- Authority
- AT
- Austria
- Prior art keywords
- test
- testing
- embedded memory
- memory
- embedded
- Prior art date
Links
- 238000012360 testing method Methods 0.000 title abstract 12
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 238000010998 test method Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/32—Serial access; Scan testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/20—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits using counters or linear-feedback shift registers [LFSR]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/10—Aspects relating to interfaces of memory device to external buses
- G11C2207/104—Embedded memory devices, e.g. memories with a processing device on the same die or ASIC memory designs
Landscapes
- Tests Of Electronic Circuits (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Microcomputers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP01110213 | 2001-04-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE421149T1 true ATE421149T1 (de) | 2009-01-15 |
Family
ID=8177247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02724563T ATE421149T1 (de) | 2001-04-25 | 2002-04-22 | Integrierte schaltung mit einer selbsttesteinrichtung für einen eingebetteten nichtflüchtigen speicher und verwandte testverfahren |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6876591B2 (de) |
| EP (1) | EP1388150B1 (de) |
| JP (1) | JP2004520673A (de) |
| CN (1) | CN100442395C (de) |
| AT (1) | ATE421149T1 (de) |
| DE (1) | DE60230865D1 (de) |
| WO (1) | WO2002086907A1 (de) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030225567A1 (en) * | 2002-03-09 | 2003-12-04 | Koch Stefan Marco | System and method for emulating an embedded non-volatile memory |
| KR100442878B1 (ko) * | 2002-07-08 | 2004-08-02 | 삼성전자주식회사 | 온 칩 롬 테스트 장치 및 방법 |
| CN100356481C (zh) * | 2004-01-30 | 2007-12-19 | 北京中星微电子有限公司 | 一种嵌入式存储器的测试装置 |
| CN100334558C (zh) * | 2004-03-23 | 2007-08-29 | 上海华虹集成电路有限责任公司 | 监控仿真芯片内部eeprom的方法 |
| CN100369159C (zh) * | 2004-07-20 | 2008-02-13 | 中兴通讯股份有限公司 | 一种闪存存储器的检测方法 |
| US20060090105A1 (en) * | 2004-10-27 | 2006-04-27 | Woods Paul R | Built-in self test for read-only memory including a diagnostic mode |
| TWI260641B (en) * | 2005-01-06 | 2006-08-21 | Prolific Technology Inc | Method for storing compare data in a read-only memory built-in self-test circuit |
| US7617425B2 (en) * | 2005-06-27 | 2009-11-10 | Logicvision, Inc. | Method for at-speed testing of memory interface using scan |
| EP2016494A4 (de) * | 2006-02-14 | 2010-02-03 | Atmel Corp | Beschreiben und einstellen von flash-speichern |
| US7610528B2 (en) * | 2006-02-14 | 2009-10-27 | Atmel Corporation | Configuring flash memory |
| KR101028901B1 (ko) * | 2009-02-05 | 2011-04-12 | (주)인디링스 | 메모리 장치, 메모리 관리 장치 및 메모리 관리 방법 |
| CN102237145A (zh) * | 2010-04-22 | 2011-11-09 | 联咏科技股份有限公司 | 箝入式存储装置以及其测试方法 |
| CN103325421B (zh) * | 2012-03-23 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | 非挥发性存储器棋盘格测试电路及其检测方法 |
| CN103093834B (zh) * | 2013-01-28 | 2016-11-16 | 上海华虹宏力半导体制造有限公司 | 闪存的可靠性测试方法 |
| US9773570B2 (en) | 2013-03-06 | 2017-09-26 | International Business Machines Corporation | Built-in-self-test (BIST) test time reduction |
| CN103700408B (zh) * | 2014-01-07 | 2017-03-29 | 上海华虹宏力半导体制造有限公司 | 存储器的检测方法 |
| US10002044B2 (en) | 2014-08-19 | 2018-06-19 | Samsung Electronics Co., Ltd. | Memory devices and modules |
| KR102214556B1 (ko) * | 2014-08-19 | 2021-02-09 | 삼성전자주식회사 | 메모리 장치 및 모듈 |
| KR20160071769A (ko) * | 2014-12-12 | 2016-06-22 | 삼성전자주식회사 | 반도체 메모리 장치 및 이를 포함하는 메모리 시스템 |
| CN105572565B (zh) * | 2015-12-23 | 2018-08-24 | 中国电子科技集团公司第五十八研究所 | 适用于1553总线协议的内建自测试电路 |
| CN106556793B (zh) * | 2016-11-09 | 2019-05-31 | 上海东软载波微电子有限公司 | 芯片测试系统及测试方法 |
| CN110751978B (zh) * | 2019-10-16 | 2021-06-08 | 上海华虹宏力半导体制造有限公司 | 用于非挥发性存储器的测试校调方法及测试校调电路 |
| US11347585B2 (en) * | 2020-07-10 | 2022-05-31 | Micron Technology, Inc. | Compression method for defect visibility in a memory device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5173906A (en) * | 1990-08-31 | 1992-12-22 | Dreibelbis Jeffrey H | Built-in self test for integrated circuits |
| US5883843A (en) * | 1996-04-30 | 1999-03-16 | Texas Instruments Incorporated | Built-in self-test arrangement for integrated circuit memory devices |
| US5677913A (en) * | 1996-07-01 | 1997-10-14 | Sun Microsystems, Inc. | Method and apparatus for efficient self testing of on-chip memory |
| US5946245A (en) * | 1996-11-27 | 1999-08-31 | Texas Instruments Incorporated | Memory array test circuit and method |
| JP2000030483A (ja) * | 1998-07-15 | 2000-01-28 | Mitsubishi Electric Corp | 大規模メモリ用ｂｉｓｔ回路 |
| KR100308621B1 (ko) * | 1998-11-19 | 2001-12-17 | 윤종용 | 반도체 메모리 장치를 위한 프로그램 가능한 내장 자기 테스트 시스템 |
| US6651202B1 (en) * | 1999-01-26 | 2003-11-18 | Lsi Logic Corporation | Built-in self repair circuitry utilizing permanent record of defects |
-
2002
- 2002-04-22 CN CNB028013697A patent/CN100442395C/zh not_active Expired - Fee Related
- 2002-04-22 JP JP2002584335A patent/JP2004520673A/ja active Pending
- 2002-04-22 EP EP02724563A patent/EP1388150B1/de not_active Expired - Lifetime
- 2002-04-22 WO PCT/IB2002/001515 patent/WO2002086907A1/en not_active Ceased
- 2002-04-22 DE DE60230865T patent/DE60230865D1/de not_active Expired - Lifetime
- 2002-04-22 US US10/475,371 patent/US6876591B2/en not_active Expired - Fee Related
- 2002-04-22 AT AT02724563T patent/ATE421149T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002086907A1 (en) | 2002-10-31 |
| CN100442395C (zh) | 2008-12-10 |
| EP1388150B1 (de) | 2009-01-14 |
| CN1462451A (zh) | 2003-12-17 |
| JP2004520673A (ja) | 2004-07-08 |
| EP1388150A1 (de) | 2004-02-11 |
| DE60230865D1 (de) | 2009-03-05 |
| US20040109370A1 (en) | 2004-06-10 |
| US6876591B2 (en) | 2005-04-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |