ATE425538T1 - Ferroelektrische speichereinrichtung, steuerverfahren und ansteuerschaltung dafür - Google Patents

Ferroelektrische speichereinrichtung, steuerverfahren und ansteuerschaltung dafür

Info

Publication number
ATE425538T1
ATE425538T1 AT03745016T AT03745016T ATE425538T1 AT E425538 T1 ATE425538 T1 AT E425538T1 AT 03745016 T AT03745016 T AT 03745016T AT 03745016 T AT03745016 T AT 03745016T AT E425538 T1 ATE425538 T1 AT E425538T1
Authority
AT
Austria
Prior art keywords
data
ferroelectric storage
ferroelectric
ferroelectric memory
storage device
Prior art date
Application number
AT03745016T
Other languages
English (en)
Inventor
Yasuaki Hamada
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of ATE425538T1 publication Critical patent/ATE425538T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Soundproofing, Sound Blocking, And Sound Damping (AREA)
  • Electrotherapy Devices (AREA)
  • Valve Device For Special Equipments (AREA)
AT03745016T 2002-03-27 2003-03-27 Ferroelektrische speichereinrichtung, steuerverfahren und ansteuerschaltung dafür ATE425538T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002089173A JP4214708B2 (ja) 2002-03-27 2002-03-27 強誘電体記憶装置及びその駆動方法

Publications (1)

Publication Number Publication Date
ATE425538T1 true ATE425538T1 (de) 2009-03-15

Family

ID=28449493

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03745016T ATE425538T1 (de) 2002-03-27 2003-03-27 Ferroelektrische speichereinrichtung, steuerverfahren und ansteuerschaltung dafür

Country Status (8)

Country Link
US (1) US6788564B2 (de)
EP (1) EP1447811B1 (de)
JP (1) JP4214708B2 (de)
KR (1) KR100589732B1 (de)
CN (1) CN100405501C (de)
AT (1) ATE425538T1 (de)
DE (1) DE60326535D1 (de)
WO (1) WO2003081601A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4024166B2 (ja) * 2002-03-20 2007-12-19 三洋電機株式会社 強誘電体メモリ
JP2004087044A (ja) * 2002-08-28 2004-03-18 Fujitsu Ltd 半導体記憶装置およびその制御方法
JP3928720B2 (ja) * 2003-01-07 2007-06-13 セイコーエプソン株式会社 強誘電体記憶装置
JP3804612B2 (ja) * 2003-01-07 2006-08-02 セイコーエプソン株式会社 強誘電体記憶装置
JP3970259B2 (ja) 2003-09-11 2007-09-05 三洋電機株式会社 メモリ
JP4024196B2 (ja) * 2003-09-30 2007-12-19 三洋電機株式会社 強誘電体メモリ
JP4639049B2 (ja) * 2004-01-14 2011-02-23 パトレネラ キャピタル リミテッド， エルエルシー メモリ
JP4377751B2 (ja) * 2004-06-10 2009-12-02 シャープ株式会社 クロスポイント構造の半導体記憶装置及びその製造方法
WO2006073308A1 (en) * 2005-01-04 2006-07-13 Thin Film Electronics Asa Method for operating a passive matrix-addressable ferroelectric or electret memory device
JP4829502B2 (ja) * 2005-01-11 2011-12-07 シャープ株式会社 半導体記憶装置の製造方法
JP4231502B2 (ja) * 2005-11-02 2009-03-04 シャープ株式会社 クロスポイント構造の半導体記憶装置
US7706165B2 (en) * 2005-12-20 2010-04-27 Agfa-Gevaert Nv Ferroelectric passive memory cell, device and method of manufacture thereof
JP4718354B2 (ja) * 2006-03-27 2011-07-06 パトレネラ キャピタル リミテッド， エルエルシー メモリ
KR101438072B1 (ko) 2010-04-15 2014-09-03 라모트 앳 텔-아비브 유니버시티 리미티드 소거 없는 플래시 메모리의 다중 프로그래밍
US9613676B1 (en) * 2016-06-29 2017-04-04 Micron Technology, Inc. Writing to cross-point non-volatile memory
JP2024039264A (ja) * 2022-09-09 2024-03-22 キオクシア株式会社 メモリデバイス

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002182A (en) * 1956-12-10 1961-09-26 Bell Telephone Labor Inc Ferroelectric storage circuits and methods
JPH0677434A (ja) 1992-08-27 1994-03-18 Hitachi Ltd 半導体記憶装置
JP3183076B2 (ja) 1994-12-27 2001-07-03 日本電気株式会社 強誘電体メモリ装置
US5640030A (en) * 1995-05-05 1997-06-17 International Business Machines Corporation Double dense ferroelectric capacitor cell memory
EP0767464B1 (de) * 1995-09-08 2003-11-19 Fujitsu Limited Ferroelektrischer Speicher und Datenleseverfahren von diesem Speicher
JPH0991970A (ja) 1995-09-26 1997-04-04 Olympus Optical Co Ltd 非破壊型強誘電体メモリ及びその駆動方法
JP3327071B2 (ja) 1995-10-16 2002-09-24 ソニー株式会社 強誘電体記憶装置
NO309500B1 (no) 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
JP3686512B2 (ja) * 1997-12-17 2005-08-24 ローム株式会社 強誘電体メモリ
NO312699B1 (no) * 2000-07-07 2002-06-17 Thin Film Electronics Asa Adressering av minnematrise
JP3606234B2 (ja) * 2000-07-13 2005-01-05 セイコーエプソン株式会社 半導体集積回路におけるメモリセルの再書き込み動作の制御方法、半導体集積回路、その半導体集積回路を多数備えた半導体装置、及びその半導体装置を用いた電子機器
JP2002157875A (ja) 2000-11-15 2002-05-31 Seiko Epson Corp 半導体集積回路

Also Published As

Publication number Publication date
US6788564B2 (en) 2004-09-07
KR20040029168A (ko) 2004-04-03
WO2003081601A1 (en) 2003-10-02
US20040109363A1 (en) 2004-06-10
EP1447811A4 (de) 2006-06-07
JP2003288784A (ja) 2003-10-10
CN1556999A (zh) 2004-12-22
EP1447811A1 (de) 2004-08-18
EP1447811B1 (de) 2009-03-11
CN100405501C (zh) 2008-07-23
DE60326535D1 (de) 2009-04-23
KR100589732B1 (ko) 2006-06-19
JP4214708B2 (ja) 2009-01-28

Similar Documents

Publication Publication Date Title
ATE425538T1 (de) Ferroelektrische speichereinrichtung, steuerverfahren und ansteuerschaltung dafür
US6967858B2 (en) Nonvolatile ferroelectric memory device and method for storing multiple bit using the same
KR100691659B1 (ko) 강유전체 메모리 및 그 액세스 방법
JP3132637B2 (ja) 不揮発性半導体記憶装置
KR920017121A (ko) 기록검증 제어회로를 갖춘 전기적으로 소거 및 프로그램 가능한 독출전용 기억장치
DE69423668D1 (de) Nichtflüchtige Halbleiterspeichervorrichtung mit Statusregister und Prüfverfahren dafür
KR950020749A (ko) 반도체 불휘발성 기억장치
KR940006265A (ko) 소거검증 및 어드레스 스크램 블링구조의 플래시 이-이-피-롬(eeprom)과 그 소거방법
KR101431758B1 (ko) 안정적인 워드라인 전압을 발생할 수 있는 플래시 메모리장치
US20240379158A1 (en) Memory and reading, writing and erasing methods thereof
KR970051351A (ko) 다중값 정보를 기록할 수 있는 비휘발성 반도체 메모리
DK1461810T3 (da) En fremgangsmåde til læsning af en passiv matrix-adresserbar indretning og en indretning til udförelse af fremgangsmåden
KR100843210B1 (ko) 저항 메모리 소자 및 데이터 기입 방법
KR970008200A (ko) 펄스구동되는 메모리셀을 갖는 전기적 소거가능한 롬
DE60122412D1 (de) Verbessertes Programmierungsverfahren für eine Speicherzelle
KR100546342B1 (ko) 반복적으로 배치되는 프리-디코딩된 신호선들의레이아웃을 개선시키는 로우 디코더 구조, 이를 구비한반도체 메모리 장치, 및 그 방법
JP3777611B2 (ja) 強誘電体メモリ装置及び電子機器
KR101395086B1 (ko) 메모리 셀 및 이를 이용한 메모리 장치
KR950012472A (ko) 비휘발성 반도체 메모리 장치
US7142445B2 (en) Ferroelectric memory device, method of driving the same, and driver circuit
US6992913B2 (en) Ferroelectric storage device
KR20050072529A (ko) 더미 비트라인의 전압 제어가 가능한 메모리 장치 및 더미비트라인 전압 제어를 통한 스트레스 테스트 방법
KR970076869A (ko) 과소거될지 여부를 각각 점검하는 메모리 셀용 진단 포텐셜 발생기를 갖는 비휘발성 반도체 기억장치
US5953251A (en) Programming method for nonvolatile memories
JP2005135466A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties