ATE425547T1 - Ätzkammer mit veränderbarem plasmavolumen - Google Patents

Ätzkammer mit veränderbarem plasmavolumen

Info

Publication number
ATE425547T1
ATE425547T1 AT02746618T AT02746618T ATE425547T1 AT E425547 T1 ATE425547 T1 AT E425547T1 AT 02746618 T AT02746618 T AT 02746618T AT 02746618 T AT02746618 T AT 02746618T AT E425547 T1 ATE425547 T1 AT E425547T1
Authority
AT
Austria
Prior art keywords
plasma
volume
etching chamber
plasma volume
processing chamber
Prior art date
Application number
AT02746618T
Other languages
English (en)
Inventor
Bi-Ming Yen
Tuqiang Ni
Lumin Li
David Hemker
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE425547T1 publication Critical patent/ATE425547T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Medicines Containing Plant Substances (AREA)
AT02746618T 2001-06-29 2002-06-21 Ätzkammer mit veränderbarem plasmavolumen ATE425547T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/895,537 US6527911B1 (en) 2001-06-29 2001-06-29 Configurable plasma volume etch chamber

Publications (1)

Publication Number Publication Date
ATE425547T1 true ATE425547T1 (de) 2009-03-15

Family

ID=25404649

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02746618T ATE425547T1 (de) 2001-06-29 2002-06-21 Ätzkammer mit veränderbarem plasmavolumen

Country Status (9)

Country Link
US (1) US6527911B1 (de)
EP (1) EP1402560B1 (de)
JP (1) JP4475946B2 (de)
KR (1) KR100883948B1 (de)
CN (1) CN1309000C (de)
AT (1) ATE425547T1 (de)
DE (1) DE60231498D1 (de)
TW (1) TW550645B (de)
WO (1) WO2003003403A1 (de)

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Also Published As

Publication number Publication date
EP1402560A1 (de) 2004-03-31
KR20040021620A (ko) 2004-03-10
TW550645B (en) 2003-09-01
EP1402560B1 (de) 2009-03-11
JP2005521229A (ja) 2005-07-14
CN1550027A (zh) 2004-11-24
US6527911B1 (en) 2003-03-04
JP4475946B2 (ja) 2010-06-09
CN1309000C (zh) 2007-04-04
WO2003003403A1 (en) 2003-01-09
DE60231498D1 (de) 2009-04-23
KR100883948B1 (ko) 2009-02-18

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