ATE425551T1 - Halo-implantatfreier, nichtgleichrichtender kontakt auf einem chip mit halo- diffusionsgebieten - Google Patents

Halo-implantatfreier, nichtgleichrichtender kontakt auf einem chip mit halo- diffusionsgebieten

Info

Publication number
ATE425551T1
ATE425551T1 AT01931903T AT01931903T ATE425551T1 AT E425551 T1 ATE425551 T1 AT E425551T1 AT 01931903 T AT01931903 T AT 01931903T AT 01931903 T AT01931903 T AT 01931903T AT E425551 T1 ATE425551 T1 AT E425551T1
Authority
AT
Austria
Prior art keywords
diffusion
halo
contact
rectifying
adjacent
Prior art date
Application number
AT01931903T
Other languages
English (en)
Inventor
James Culp
Jawahar Nayak
Werner Rausch
Melanie Sherony
Steven Voldman
Noah Zamdmer
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE425551T1 publication Critical patent/ATE425551T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Thermistors And Varistors (AREA)
AT01931903T 2000-06-08 2001-05-23 Halo-implantatfreier, nichtgleichrichtender kontakt auf einem chip mit halo- diffusionsgebieten ATE425551T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/589,719 US6429482B1 (en) 2000-06-08 2000-06-08 Halo-free non-rectifying contact on chip with halo source/drain diffusion

Publications (1)

Publication Number Publication Date
ATE425551T1 true ATE425551T1 (de) 2009-03-15

Family

ID=24359197

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01931903T ATE425551T1 (de) 2000-06-08 2001-05-23 Halo-implantatfreier, nichtgleichrichtender kontakt auf einem chip mit halo- diffusionsgebieten

Country Status (12)

Country Link
US (2) US6429482B1 (de)
EP (1) EP1290719B1 (de)
JP (1) JP3962326B2 (de)
KR (1) KR100500805B1 (de)
CN (1) CN1234175C (de)
AT (1) ATE425551T1 (de)
AU (1) AU2001258594A1 (de)
DE (1) DE60137927D1 (de)
MX (1) MXPA02011791A (de)
MY (1) MY133983A (de)
TW (1) TW512434B (de)
WO (1) WO2001095369A2 (de)

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US6692998B2 (en) * 2000-11-30 2004-02-17 International Business Machines Corporation Integrated high quality diode
JP4676069B2 (ja) * 2001-02-07 2011-04-27 パナソニック株式会社 半導体装置の製造方法
US6894324B2 (en) * 2001-02-15 2005-05-17 United Microelectronics Corp. Silicon-on-insulator diodes and ESD protection circuits
US6867103B1 (en) * 2002-05-24 2005-03-15 Taiwan Semiconductor Manufacturing Company Method of fabricating an ESD device on SOI
US7226843B2 (en) * 2002-09-30 2007-06-05 Intel Corporation Indium-boron dual halo MOSFET
JP2004311903A (ja) * 2003-04-10 2004-11-04 Oki Electric Ind Co Ltd 半導体装置及び製造方法
US7138318B2 (en) * 2003-05-28 2006-11-21 Advanced Micro Devices, Inc. Method of fabricating body-tied SOI transistor having halo implant region underlying hammerhead portion of gate
US7683433B2 (en) 2004-07-07 2010-03-23 Semi Solution, Llc Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors
US7224205B2 (en) * 2004-07-07 2007-05-29 Semi Solutions, Llc Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors
US7375402B2 (en) * 2004-07-07 2008-05-20 Semi Solutions, Llc Method and apparatus for increasing stability of MOS memory cells
US8247840B2 (en) * 2004-07-07 2012-08-21 Semi Solutions, Llc Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode
US7651905B2 (en) * 2005-01-12 2010-01-26 Semi Solutions, Llc Apparatus and method for reducing gate leakage in deep sub-micron MOS transistors using semi-rectifying contacts
US7898297B2 (en) * 2005-01-04 2011-03-01 Semi Solution, Llc Method and apparatus for dynamic threshold voltage control of MOS transistors in dynamic logic circuits
US7227204B2 (en) * 2005-02-16 2007-06-05 International Business Machines Corporation Structure for improved diode ideality
US7612410B1 (en) * 2005-08-08 2009-11-03 Altera Corporation Trigger device for ESD protection circuit
US20070048925A1 (en) * 2005-08-24 2007-03-01 International Business Machines Corporation Body-Contacted Silicon on Insulation (SOI) field effect transistors
US7679029B2 (en) * 2005-10-28 2010-03-16 Cymer, Inc. Systems and methods to shape laser light as a line beam for interaction with a substrate having surface variations
US7335563B2 (en) 2005-11-09 2008-02-26 International Business Machines Corporation Rotated field effect transistors and method of manufacture
US7737500B2 (en) * 2006-04-26 2010-06-15 International Business Machines Corporation CMOS diodes with dual gate conductors, and methods for forming the same
US7863689B2 (en) * 2006-09-19 2011-01-04 Semi Solutions, Llc. Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistor
US20080079051A1 (en) * 2006-09-29 2008-04-03 Luo Yuan Varactor with halo implant regions of opposite polarity
JP2008117938A (ja) * 2006-11-06 2008-05-22 Toshiba Corp 半導体記憶装置
JP4329829B2 (ja) * 2007-02-27 2009-09-09 株式会社デンソー 半導体装置
US7485520B2 (en) * 2007-07-05 2009-02-03 International Business Machines Corporation Method of manufacturing a body-contacted finfet
US8110465B2 (en) * 2007-07-30 2012-02-07 International Business Machines Corporation Field effect transistor having an asymmetric gate electrode
US7932136B2 (en) * 2008-04-24 2011-04-26 International Business Machines Corporation Source/drain junction for high performance MOSFET formed by selective EPI process
US8665570B2 (en) * 2009-03-13 2014-03-04 Qualcomm Incorporated Diode having a pocket implant blocked and circuits and methods employing same
US7829939B1 (en) * 2009-04-20 2010-11-09 International Business Machines Corporation MOSFET including epitaxial halo region
US7858469B1 (en) * 2009-09-24 2010-12-28 Altera Corporation Method for forming a trigger device for ESD protection circuit
US9577079B2 (en) * 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors
US8643107B2 (en) * 2010-01-07 2014-02-04 International Business Machines Corporation Body-tied asymmetric N-type field effect transistor
US8426917B2 (en) * 2010-01-07 2013-04-23 International Business Machines Corporation Body-tied asymmetric P-type field effect transistor
US9006054B2 (en) 2013-06-13 2015-04-14 International Business Machines Corporation Lateral diode compatible with FinFET and method to fabricate same
CN103700702B (zh) * 2013-12-30 2016-08-24 杭州电子科技大学 漏/源区介质/pn结隔离前栅p-mosfet射频开关器件

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US5185280A (en) 1991-01-29 1993-02-09 Texas Instruments Incorporated Method of fabricating a soi transistor with pocket implant and body-to-source (bts) contact
US5650340A (en) 1994-08-18 1997-07-22 Sun Microsystems, Inc. Method of making asymmetric low power MOS devices
KR960026960A (ko) * 1994-12-16 1996-07-22 리 패치 비대칭 저전력 모스(mos) 소자
US5578506A (en) 1995-02-27 1996-11-26 Alliedsignal Inc. Method of fabricating improved lateral Silicon-On-Insulator (SOI) power device
US5744372A (en) * 1995-04-12 1998-04-28 National Semiconductor Corporation Fabrication of complementary field-effect transistors each having multi-part channel
US5936278A (en) 1996-03-13 1999-08-10 Texas Instruments Incorporated Semiconductor on silicon (SOI) transistor with a halo implant
US5811857A (en) 1996-10-22 1998-09-22 International Business Machines Corporation Silicon-on-insulator body-coupled gated diode for electrostatic discharge (ESD) and analog applications
US5952695A (en) 1997-03-05 1999-09-14 International Business Machines Corporation Silicon-on-insulator and CMOS-on-SOI double film structures
US5923067A (en) 1997-04-04 1999-07-13 International Business Machines Corporation 3-D CMOS-on-SOI ESD structure and method
US5985727A (en) * 1997-06-30 1999-11-16 Sun Microsystems, Inc. Method for forming MOS devices with retrograde pocket regions and counter dopant regions buried in the substrate surface
US6051458A (en) * 1998-05-04 2000-04-18 Taiwan Semiconductor Manufacturing Company Drain and source engineering for ESD-protection transistors
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US6194278B1 (en) * 1999-06-21 2001-02-27 Infineon Technologies North America Corp. Device performance by employing an improved method for forming halo implants

Also Published As

Publication number Publication date
US20020149058A1 (en) 2002-10-17
DE60137927D1 (de) 2009-04-23
EP1290719B1 (de) 2009-03-11
JP3962326B2 (ja) 2007-08-22
MXPA02011791A (es) 2003-04-10
KR20030028478A (ko) 2003-04-08
HK1055508A1 (en) 2004-01-09
EP1290719A2 (de) 2003-03-12
AU2001258594A1 (en) 2001-12-17
JP2003536251A (ja) 2003-12-02
KR100500805B1 (ko) 2005-07-12
MY133983A (en) 2007-11-30
US6429482B1 (en) 2002-08-06
US6750109B2 (en) 2004-06-15
CN1234175C (zh) 2005-12-28
CN1434983A (zh) 2003-08-06
TW512434B (en) 2002-12-01
WO2001095369A2 (en) 2001-12-13
WO2001095369A3 (en) 2002-05-16

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