ATE428217T1 - Hochfrequenzoszillator mit spin-polarisiertem elektrischen strom - Google Patents

Hochfrequenzoszillator mit spin-polarisiertem elektrischen strom

Info

Publication number
ATE428217T1
ATE428217T1 AT06832165T AT06832165T ATE428217T1 AT E428217 T1 ATE428217 T1 AT E428217T1 AT 06832165 T AT06832165 T AT 06832165T AT 06832165 T AT06832165 T AT 06832165T AT E428217 T1 ATE428217 T1 AT E428217T1
Authority
AT
Austria
Prior art keywords
high frequency
electrical current
frequency oscillator
spin polarized
polarized electrical
Prior art date
Application number
AT06832165T
Other languages
English (en)
Inventor
Bernard Dieny
Alina-Maria Deac-Renner
Original Assignee
Commissariat Energie Atomique
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Centre Nat Rech Scient filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE428217T1 publication Critical patent/ATE428217T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Hall/Mr Elements (AREA)
  • Inverter Devices (AREA)
  • Magnetic Heads (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Nitrogen And Oxygen As The Only Ring Hetero Atoms (AREA)
  • Transmitters (AREA)
AT06832165T 2005-11-02 2006-10-31 Hochfrequenzoszillator mit spin-polarisiertem elektrischen strom ATE428217T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0553321A FR2892871B1 (fr) 2005-11-02 2005-11-02 Oscillateur radio frequence a courant elelctrique polarise en spin

Publications (1)

Publication Number Publication Date
ATE428217T1 true ATE428217T1 (de) 2009-04-15

Family

ID=37036883

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06832165T ATE428217T1 (de) 2005-11-02 2006-10-31 Hochfrequenzoszillator mit spin-polarisiertem elektrischen strom

Country Status (9)

Country Link
US (1) US8227099B2 (de)
EP (1) EP1943727B1 (de)
JP (1) JP5051726B2 (de)
CN (1) CN101300735B (de)
AT (1) ATE428217T1 (de)
BR (1) BRPI0618122A2 (de)
DE (1) DE602006006207D1 (de)
FR (1) FR2892871B1 (de)
WO (1) WO2007052240A2 (de)

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FR2944384B1 (fr) * 2009-04-09 2012-01-20 Commissariat Energie Atomique Oscillateur radiofrequence a vanne de spin ou a jonction tunnel
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FR2952486B1 (fr) 2009-11-06 2012-01-06 Commissariat Energie Atomique Oscillateur radiofrequence
FR2957209B1 (fr) 2010-03-03 2012-04-13 Commissariat Energie Atomique Oscillateur radiofrequence et procede de generation d'un signal oscillant
FR2957210B1 (fr) 2010-03-03 2012-04-13 Commissariat Energie Atomique Oscillateur radiofrequence et procede de generation d'un signal oscillant
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FR2974467B1 (fr) 2011-04-20 2013-05-31 Commissariat Energie Atomique Synthetiseur d'un signal oscillant
FR2974418B1 (fr) 2011-04-20 2013-05-31 Commissariat Energie Atomique Detecteur d'oscillations
US8462461B2 (en) 2011-07-05 2013-06-11 HGST Netherlands B.V. Spin-torque oscillator (STO) with magnetically damped free layer
US8908424B2 (en) * 2011-10-03 2014-12-09 The Hong Kong University Of Science And Technology Magnetization switching through magnonic spin transfer torque
US9343656B2 (en) * 2012-03-02 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic tunnel junction (MTJ) structure in magnetic random access memory
US9355654B1 (en) * 2012-12-21 2016-05-31 Western Digital Technologies, Inc. Spin torque oscillator for microwave assisted magnetic recording with increased damping
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FR3020497B1 (fr) 2014-04-28 2016-05-13 Commissariat Energie Atomique Aimant permanent comportant un empilement de couches ferromagnetiques et antiferromagnetiques
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CL2015003361A1 (es) * 2015-11-16 2017-08-04 Univ Santiago Chile Nanogenerador de campo magnético alterno que utiliza un nanohilo que permite ser aplicado en la generación corriente alterna a nivel de nanoescala; y método asociado
CN107895623B (zh) * 2016-01-14 2020-06-09 青岛大学 一种光学模铁磁共振增强的多层膜
FR3050068B1 (fr) 2016-04-06 2018-05-18 Commissariat A L'energie Atomique Et Aux Energies Alternatives Aimant permanent comprenant un empilement de n motifs
SE540812C2 (en) * 2016-11-02 2018-11-20 Johan Aakerman Ab Spin oscillator device and mutually synchronized spin oscillator device arrays
CN108242858A (zh) * 2016-12-27 2018-07-03 中国科学院苏州纳米技术与纳米仿生研究所 一种基于电子自旋属性的新型射频微波能量采集装置
FR3073661B1 (fr) 2017-11-10 2019-11-22 Commissariat A L'energie Atomique Et Aux Energies Alternatives Aimant permanent comprenant une couche antiferromagnetique et une couche ferromagnetique
CN109256656B (zh) * 2018-10-19 2020-04-24 山东大学 自旋矩纳米振荡器及基于该振荡器的太赫兹信号发生器
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Also Published As

Publication number Publication date
WO2007052240A2 (en) 2007-05-10
US20080241597A1 (en) 2008-10-02
DE602006006207D1 (de) 2009-05-20
FR2892871A1 (fr) 2007-05-04
EP1943727B1 (de) 2009-04-08
JP2009515406A (ja) 2009-04-09
JP5051726B2 (ja) 2012-10-17
CN101300735B (zh) 2011-11-09
BRPI0618122A2 (pt) 2011-08-16
HK1120937A1 (en) 2009-04-09
FR2892871B1 (fr) 2007-11-23
CN101300735A (zh) 2008-11-05
US8227099B2 (en) 2012-07-24
EP1943727A2 (de) 2008-07-16
WO2007052240A3 (en) 2007-08-02

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