ATE429462T1 - Verfahren zur herstellung einer härtbaren zusammensetzung mit niedrigem wärmeausdehnungskoeffizienten, integrierte schaltung, härtbare zusammensetzung und damit hergestellte integrierte schaltung - Google Patents

Verfahren zur herstellung einer härtbaren zusammensetzung mit niedrigem wärmeausdehnungskoeffizienten, integrierte schaltung, härtbare zusammensetzung und damit hergestellte integrierte schaltung

Info

Publication number
ATE429462T1
ATE429462T1 AT06077248T AT06077248T ATE429462T1 AT E429462 T1 ATE429462 T1 AT E429462T1 AT 06077248 T AT06077248 T AT 06077248T AT 06077248 T AT06077248 T AT 06077248T AT E429462 T1 ATE429462 T1 AT E429462T1
Authority
AT
Austria
Prior art keywords
curable composition
integrated circuit
nanoparticle composition
producing
thermal expansion
Prior art date
Application number
AT06077248T
Other languages
English (en)
Inventor
Rafil A Basheer
Mohammed Bouguettaya
Derek B Workman
Arun K Chaudhuri
Original Assignee
Delphi Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Delphi Tech Inc filed Critical Delphi Tech Inc
Application granted granted Critical
Publication of ATE429462T1 publication Critical patent/ATE429462T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H10W74/473—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins containing a filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/011—Nanostructured additives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/856—Bump connectors and die-attach connectors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
AT06077248T 2005-12-23 2006-12-14 Verfahren zur herstellung einer härtbaren zusammensetzung mit niedrigem wärmeausdehnungskoeffizienten, integrierte schaltung, härtbare zusammensetzung und damit hergestellte integrierte schaltung ATE429462T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/317,661 US20060199301A1 (en) 2005-03-07 2005-12-23 Methods of making a curable composition having low coefficient of thermal expansion and an integrated circuit and a curable composition and integrated circuit made there from

Publications (1)

Publication Number Publication Date
ATE429462T1 true ATE429462T1 (de) 2009-05-15

Family

ID=37963673

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06077248T ATE429462T1 (de) 2005-12-23 2006-12-14 Verfahren zur herstellung einer härtbaren zusammensetzung mit niedrigem wärmeausdehnungskoeffizienten, integrierte schaltung, härtbare zusammensetzung und damit hergestellte integrierte schaltung

Country Status (4)

Country Link
US (1) US20060199301A1 (de)
EP (1) EP1801151B1 (de)
AT (1) ATE429462T1 (de)
DE (1) DE602006006402D1 (de)

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US6899960B2 (en) * 2002-03-22 2005-05-31 Intel Corporation Microelectronic or optoelectronic package having a polybenzoxazine-based film as an underfill material
US6863825B2 (en) 2003-01-29 2005-03-08 Union Oil Company Of California Process for removing arsenic from aqueous streams
US7504460B2 (en) * 2005-03-07 2009-03-17 Delphi Technologies, Inc. Composition of aromatic or cycloaliphatic amine-derived polyepoxide and polyamine
US7498197B2 (en) * 2006-09-13 2009-03-03 Delphi Technologies, Inc. Silica nanoparticles thermoset resin compositions
US8066874B2 (en) 2006-12-28 2011-11-29 Molycorp Minerals, Llc Apparatus for treating a flow of an aqueous solution containing arsenic
EP1961554B1 (de) * 2007-02-07 2010-01-27 Mitsubishi Gas Chemical Company, Inc. Prepreg und Laminat
US8349764B2 (en) 2007-10-31 2013-01-08 Molycorp Minerals, Llc Composition for treating a fluid
US8252087B2 (en) 2007-10-31 2012-08-28 Molycorp Minerals, Llc Process and apparatus for treating a gas containing a contaminant
US20110097212A1 (en) * 2008-06-16 2011-04-28 Thompson Wendy L Toughened curable compositions
CN102725334B (zh) * 2009-11-20 2014-11-26 松下电器产业株式会社 半固化片、层压板、覆金属箔层压板、电路基板及led搭载用电路基板
JP2012089750A (ja) * 2010-10-21 2012-05-10 Hitachi Chem Co Ltd 半導体封止充てん用熱硬化性樹脂組成物及び半導体装置
US9233863B2 (en) 2011-04-13 2016-01-12 Molycorp Minerals, Llc Rare earth removal of hydrated and hydroxyl species
US8388744B1 (en) * 2011-08-30 2013-03-05 General Electric Company Systems and methods for using a boehmite bond-coat with polyimide membranes for gas separation
US8963340B2 (en) * 2011-09-13 2015-02-24 International Business Machines Corporation No flow underfill or wafer level underfill and solder columns
US9504168B2 (en) * 2011-09-30 2016-11-22 Intel Corporation Fluxing-encapsulant material for microelectronic packages assembled via thermal compression bonding process
US9975787B2 (en) 2014-03-07 2018-05-22 Secure Natural Resources Llc Removal of arsenic from aqueous streams with cerium (IV) oxide compositions

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US5286572A (en) * 1988-11-28 1994-02-15 International Business Machines Corporation Planarizing ladder-type silsequioxane polymer insulation layer
JPH0412595A (ja) * 1990-05-02 1992-01-17 Mitsubishi Petrochem Co Ltd 導電性ペースト組成物
US5811317A (en) * 1995-08-25 1998-09-22 Texas Instruments Incorporated Process for reflow bonding a semiconductor die to a substrate and the product produced by the product
US6399178B1 (en) * 1998-07-20 2002-06-04 Amerasia International Technology, Inc. Rigid adhesive underfill preform, as for a flip-chip device
US6369183B1 (en) * 1998-08-13 2002-04-09 Wm. Marsh Rice University Methods and materials for fabrication of alumoxane polymers
US6376100B1 (en) * 1999-06-09 2002-04-23 Shin Etsu-Chemical Co., Ltd. Flip-chip type semiconductor device underfill material and flip-chip type semiconductor device
US6224846B1 (en) * 1999-08-21 2001-05-01 Condea Vista Company Method for making modified boehmite alumina
KR20080081373A (ko) * 2000-02-15 2008-09-09 히다치 가세고교 가부시끼가이샤 접착제 조성물, 그 제조 방법, 이것을 이용한 접착 필름, 반도체 탑재용 기판 및 반도체 장치
US6927301B2 (en) * 2000-10-27 2005-08-09 The Regents Of The University Of Michigan Well-defined nanosized building blocks for organic/inorganic nanocomposites
US6924091B2 (en) * 2001-01-05 2005-08-02 Fuji Photo Film Co., Ltd. Silver halide photographic lightsensitive material
US6724091B1 (en) * 2002-10-24 2004-04-20 Intel Corporation Flip-chip system and method of making same
US6610559B2 (en) * 2001-11-16 2003-08-26 Indium Corporation Of America Integrated void-free process for assembling a solder bumped chip
WO2003063205A2 (en) * 2002-01-17 2003-07-31 Silecs Oy Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications
US6887517B1 (en) * 2002-06-12 2005-05-03 Tda Research Surface modified particles by multi-step Michael-type addition and process for the preparation thereof
US20040102529A1 (en) * 2002-11-22 2004-05-27 Campbell John Robert Functionalized colloidal silica, dispersions and methods made thereby
US7088010B2 (en) * 2003-12-18 2006-08-08 Intel Corporation Chip packaging compositions, packages and systems made therewith, and methods of making same
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US7504460B2 (en) * 2005-03-07 2009-03-17 Delphi Technologies, Inc. Composition of aromatic or cycloaliphatic amine-derived polyepoxide and polyamine

Also Published As

Publication number Publication date
US20060199301A1 (en) 2006-09-07
DE602006006402D1 (de) 2009-06-04
EP1801151B1 (de) 2009-04-22
EP1801151A1 (de) 2007-06-27

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