ATE431002T1 - Halbleiterlaser mit einem sättigbaren bragg- refektorspiegel - Google Patents

Halbleiterlaser mit einem sättigbaren bragg- refektorspiegel

Info

Publication number
ATE431002T1
ATE431002T1 AT00943033T AT00943033T ATE431002T1 AT E431002 T1 ATE431002 T1 AT E431002T1 AT 00943033 T AT00943033 T AT 00943033T AT 00943033 T AT00943033 T AT 00943033T AT E431002 T1 ATE431002 T1 AT E431002T1
Authority
AT
Austria
Prior art keywords
refector
mirror
semiconductor laser
saturable bragg
mode
Prior art date
Application number
AT00943033T
Other languages
English (en)
Inventor
Ming Wu
Ji-Lin Shen
Original Assignee
Univ California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California filed Critical Univ California
Application granted granted Critical
Publication of ATE431002T1 publication Critical patent/ATE431002T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06253—Pulse modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Plasma & Fusion (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Elements Other Than Lenses (AREA)
AT00943033T 1999-06-22 2000-06-21 Halbleiterlaser mit einem sättigbaren bragg- refektorspiegel ATE431002T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/338,458 US6449301B1 (en) 1999-06-22 1999-06-22 Method and apparatus for mode locking of external cavity semiconductor lasers with saturable Bragg reflectors
PCT/US2000/017127 WO2000079657A1 (en) 1999-06-22 2000-06-21 A semiconductor laser having a reflecting mirror which comprises a saturable bragg reflector

Publications (1)

Publication Number Publication Date
ATE431002T1 true ATE431002T1 (de) 2009-05-15

Family

ID=23324892

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00943033T ATE431002T1 (de) 1999-06-22 2000-06-21 Halbleiterlaser mit einem sättigbaren bragg- refektorspiegel

Country Status (6)

Country Link
US (1) US6449301B1 (de)
EP (1) EP1188207B1 (de)
JP (1) JP2003521106A (de)
AT (1) ATE431002T1 (de)
DE (1) DE60042157D1 (de)
WO (1) WO2000079657A1 (de)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060241574A1 (en) * 1995-08-31 2006-10-26 Rizoiu Ioana M Electromagnetic energy distributions for electromagnetically induced disruptive cutting
US20060240381A1 (en) * 1995-08-31 2006-10-26 Biolase Technology, Inc. Fluid conditioning system
US20090143775A1 (en) * 1995-08-31 2009-06-04 Rizoiu Ioana M Medical laser having controlled-temperature and sterilized fluid output
US20100125291A1 (en) * 1995-08-31 2010-05-20 Rizoiu Ioana M Drill and flavored fluid particles combination
US7320594B1 (en) * 1995-08-31 2008-01-22 Biolase Technology, Inc. Fluid and laser system
US6288499B1 (en) * 1997-06-12 2001-09-11 Biolase Technology, Inc. Electromagnetic energy distributions for electromagnetically induced mechanical cutting
US20050281887A1 (en) * 1995-08-31 2005-12-22 Rizoiu Ioana M Fluid conditioning system
US6393035B1 (en) * 1999-02-01 2002-05-21 Gigatera Ag High-repetition rate passively mode-locked solid-state laser
US6647046B1 (en) * 1999-11-23 2003-11-11 Corning Lasertron, Inc. Mode-selective facet layer for pump laser
US6885683B1 (en) 2000-05-23 2005-04-26 Imra America, Inc. Modular, high energy, widely-tunable ultrafast fiber source
JP3532838B2 (ja) 2000-08-30 2004-05-31 独立行政法人 科学技術振興機構 超短パルス光源
US20080157690A1 (en) * 2001-05-02 2008-07-03 Biolase Technology, Inc. Electromagnetic energy distributions for electromagnetically induced mechanical cutting
US20020176473A1 (en) * 2001-05-23 2002-11-28 Aram Mooradian Wavelength selectable, controlled chirp, semiconductor laser
JP2003090792A (ja) * 2001-09-20 2003-03-28 Fuji Photo Film Co Ltd 光断層画像化装置
EP1517415A1 (de) * 2003-09-18 2005-03-23 Leica Geosystems AG Geodätisches Gerät mit einer Laserquelle
US20100151406A1 (en) * 2004-01-08 2010-06-17 Dmitri Boutoussov Fluid conditioning system
US8040929B2 (en) 2004-03-25 2011-10-18 Imra America, Inc. Optical parametric amplification, optical parametric generation, and optical pumping in optical fibers systems
US7970030B2 (en) * 2004-07-27 2011-06-28 Biolase Technology, Inc. Dual pulse-width medical laser with presets
EP1799404B1 (de) * 2004-07-27 2020-01-08 Biolase, Inc. Rotierendes gegenwinkelhandstück mit taktiler rückführung umfassende spitzenhülse
JP2006053690A (ja) * 2004-08-10 2006-02-23 Ricoh Co Ltd 画像処理装置、画像処理方法、画像処理プログラムおよび記録媒体
EP3883072A1 (de) * 2004-08-13 2021-09-22 Biolase, Inc. Medizinischer doppelimpulsbreitenlaser mit voreinstellungen
WO2014079478A1 (en) 2012-11-20 2014-05-30 Light In Light Srl High speed laser processing of transparent materials
US8724666B1 (en) * 2013-01-04 2014-05-13 Alcon Lensx, Inc. Self starting mode-locked laser oscillator
EP2754524B1 (de) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Verfahren und Vorrichtung zum laserbasierten Bearbeiten von flächigen Substraten, d.h. Wafer oder Glaselement, unter Verwendung einer Laserstrahlbrennlinie
US9701564B2 (en) 2013-01-15 2017-07-11 Corning Incorporated Systems and methods of glass cutting by inducing pulsed laser perforations into glass articles
EP2781296B1 (de) 2013-03-21 2020-10-21 Corning Laser Technologies GmbH Vorrichtung und verfahren zum ausschneiden von konturen aus flächigen substraten mittels laser
US9850160B2 (en) 2013-12-17 2017-12-26 Corning Incorporated Laser cutting of display glass compositions
US9676167B2 (en) 2013-12-17 2017-06-13 Corning Incorporated Laser processing of sapphire substrate and related applications
US9687936B2 (en) 2013-12-17 2017-06-27 Corning Incorporated Transparent material cutting with ultrafast laser and beam optics
US20150165560A1 (en) 2013-12-17 2015-06-18 Corning Incorporated Laser processing of slots and holes
US10442719B2 (en) 2013-12-17 2019-10-15 Corning Incorporated Edge chamfering methods
US9701563B2 (en) 2013-12-17 2017-07-11 Corning Incorporated Laser cut composite glass article and method of cutting
US11556039B2 (en) 2013-12-17 2023-01-17 Corning Incorporated Electrochromic coated glass articles and methods for laser processing the same
US9815730B2 (en) 2013-12-17 2017-11-14 Corning Incorporated Processing 3D shaped transparent brittle substrate
US10293436B2 (en) 2013-12-17 2019-05-21 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
TWI730945B (zh) 2014-07-08 2021-06-21 美商康寧公司 用於雷射處理材料的方法與設備
KR20170028943A (ko) * 2014-07-14 2017-03-14 코닝 인코포레이티드 조정가능한 레이저 빔 촛점 라인을 사용하여 투명한 재료를 처리하는 방법 및 시스템
EP3169479B1 (de) 2014-07-14 2019-10-02 Corning Incorporated Verfahren und system zum stoppen von inzidenter rissausbreitung in einem transparenten material
WO2016010949A1 (en) 2014-07-14 2016-01-21 Corning Incorporated Method and system for forming perforations
CN107073641B (zh) 2014-07-14 2020-11-10 康宁股份有限公司 接口块；用于使用这种接口块切割在波长范围内透明的衬底的系统和方法
US9617180B2 (en) 2014-07-14 2017-04-11 Corning Incorporated Methods and apparatuses for fabricating glass articles
US10047001B2 (en) 2014-12-04 2018-08-14 Corning Incorporated Glass cutting systems and methods using non-diffracting laser beams
CN107406293A (zh) 2015-01-12 2017-11-28 康宁股份有限公司 使用多光子吸收方法来对经热回火的基板进行激光切割
US11773004B2 (en) 2015-03-24 2023-10-03 Corning Incorporated Laser cutting and processing of display glass compositions
KR20170131638A (ko) 2015-03-27 2017-11-29 코닝 인코포레이티드 가스 투과성 유리창 및 이의 제작방법
WO2017011296A1 (en) 2015-07-10 2017-01-19 Corning Incorporated Methods of continuous fabrication of holes in flexible substrate sheets and products relating to the same
JP6938543B2 (ja) 2016-05-06 2021-09-22 コーニング インコーポレイテッド 透明基板からの、輪郭設定された形状のレーザ切断及び取り外し
US10410883B2 (en) 2016-06-01 2019-09-10 Corning Incorporated Articles and methods of forming vias in substrates
US10794679B2 (en) 2016-06-29 2020-10-06 Corning Incorporated Method and system for measuring geometric parameters of through holes
KR20190035805A (ko) 2016-07-29 2019-04-03 코닝 인코포레이티드 레이저 처리를 위한 장치 및 방법
KR102423775B1 (ko) 2016-08-30 2022-07-22 코닝 인코포레이티드 투명 재료의 레이저 가공
US10730783B2 (en) 2016-09-30 2020-08-04 Corning Incorporated Apparatuses and methods for laser processing transparent workpieces using non-axisymmetric beam spots
KR102428350B1 (ko) 2016-10-24 2022-08-02 코닝 인코포레이티드 시트형 유리 기판의 레이저 기반 기계 가공을 위한 기판 프로세싱 스테이션
US10752534B2 (en) 2016-11-01 2020-08-25 Corning Incorporated Apparatuses and methods for laser processing laminate workpiece stacks
US10688599B2 (en) 2017-02-09 2020-06-23 Corning Incorporated Apparatus and methods for laser processing transparent workpieces using phase shifted focal lines
WO2018205087A1 (zh) * 2017-05-08 2018-11-15 深圳大学 一种异质结可饱和吸收镜及其制备方法、脉冲光纤激光器
US10580725B2 (en) 2017-05-25 2020-03-03 Corning Incorporated Articles having vias with geometry attributes and methods for fabricating the same
US11078112B2 (en) 2017-05-25 2021-08-03 Corning Incorporated Silica-containing substrates with vias having an axially variable sidewall taper and methods for forming the same
US10626040B2 (en) 2017-06-15 2020-04-21 Corning Incorporated Articles capable of individual singulation
US12180108B2 (en) 2017-12-19 2024-12-31 Corning Incorporated Methods for etching vias in glass-based articles employing positive charge organic molecules
US11554984B2 (en) 2018-02-22 2023-01-17 Corning Incorporated Alkali-free borosilicate glasses with low post-HF etch roughness

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128587A (ja) * 1985-11-29 1987-06-10 Matsushita Electric Ind Co Ltd 半導体レ−ザ
US5345454A (en) * 1991-11-06 1994-09-06 At&T Bell Laboratories Antiresonant Fabry-Perot p-i-n modulator
US5257276A (en) * 1992-04-03 1993-10-26 California Institute Of Technology Strained layer InP/InGaAs quantum well laser
JP3080831B2 (ja) * 1994-02-03 2000-08-28 日本電気株式会社 多重量子井戸半導体レーザ
US5627854A (en) * 1995-03-15 1997-05-06 Lucent Technologies Inc. Saturable bragg reflector
JPH09199799A (ja) * 1996-01-19 1997-07-31 Hitachi Ltd モード同期レーザ
US5701327A (en) * 1996-04-30 1997-12-23 Lucent Technologies Inc. Saturable Bragg reflector structure and process for fabricating the same
IT1286140B1 (it) * 1996-07-02 1998-07-07 Cselt Centro Studi Lab Telecom Procedimento e dispositivo per la generazione di impulsi ottici ultracorti.
JP3022437B2 (ja) * 1997-09-25 2000-03-21 日本電気株式会社 モード同期半導体レーザ

Also Published As

Publication number Publication date
EP1188207A4 (de) 2005-09-21
EP1188207B1 (de) 2009-05-06
US6449301B1 (en) 2002-09-10
EP1188207A1 (de) 2002-03-20
JP2003521106A (ja) 2003-07-08
DE60042157D1 (de) 2009-06-18
WO2000079657A1 (en) 2000-12-28

Similar Documents

Publication Publication Date Title
ATE431002T1 (de) Halbleiterlaser mit einem sättigbaren bragg- refektorspiegel
KR970024398A (ko) 수동과 능동의 혼합형으로 모드로킹 된 레이저 구도(A hybrid-type passively and actively mode-locked laser-scheme)
EP1130710A3 (de) Optischer Impulsgeber mit hoher Wiederholungsgeschwindigkeit
CA2169785A1 (en) Saturable bragg reflector
AU3007689A (en) Frequency conversion of optical radiation
ATE105114T1 (de) Frequenzumwandlung von optischer strahlung.
WO2002065950A3 (en) Laser cutting of stents and other medical devices
AU2003230604A1 (en) Intracavity resonantly enhanced fourth-harmonic generation using uncoated brewster surfaces
WO2006078529A3 (en) System and method for passively q-switched, resonantly pumped, erbium-doped crystalline laser
DE60234823D1 (de) Gütegeschalteter co2 laser für materialbearbeitung
EP0331303A3 (de) Erzeugung der zweiten Harmonischen
EP1056173A3 (de) Verfahren und System für Wellenforming von Signallicht
TW430581B (en) Laser apparatus
CA2329089A1 (en) Fiber grating feedback stabilization of broad area laser diode
ATE82654T1 (de) Frequenz-gekoppelte laser-lichtquelle.
EP0921613A3 (de) KOMPAKTER FESTKÖRPERLASER und Sender unter Verwendung desselben
ATE284574T1 (de) Optische resonatoren mit diskontinuierlichen phasenbauelementen
CA2204563A1 (en) Eyesafe laser transmitter with single resonator cavity for both pump laser and optical parametric oscillator
CA2201622A1 (en) Optical q-switching to generate ultra short pulses in diode lasers
Xiang et al. Sub‐100 femtosecond pulses from an external‐cavity surface‐emitting InGaAs/InP multiple quantum well laser with soliton‐effect compression
US6195369B1 (en) High stability soliton source
ATE403172T1 (de) Integrierter optischer bauteil zur kopplung
ATE127629T1 (de) Halbleiterlaserverstärkereinheit hoher verstärkung.
ATE56565T1 (de) Strahlungsquelle.
DE60042293D1 (de) Laser mit erweitertem Arbeitstemperaturbereich

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties