ATE432500T1 - System, verfahren und anordnung einer flexiblen dram architektur - Google Patents

System, verfahren und anordnung einer flexiblen dram architektur

Info

Publication number
ATE432500T1
ATE432500T1 AT03765490T AT03765490T ATE432500T1 AT E432500 T1 ATE432500 T1 AT E432500T1 AT 03765490 T AT03765490 T AT 03765490T AT 03765490 T AT03765490 T AT 03765490T AT E432500 T1 ATE432500 T1 AT E432500T1
Authority
AT
Austria
Prior art keywords
arrangement
dram architecture
flexible
flexible dram
architecture
Prior art date
Application number
AT03765490T
Other languages
English (en)
Inventor
James Dodd
Brian Johnson
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE432500T1 publication Critical patent/ATE432500T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Executing Machine-Instructions (AREA)
  • Semiconductor Memories (AREA)
AT03765490T 2002-07-19 2003-07-03 System, verfahren und anordnung einer flexiblen dram architektur ATE432500T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/199,578 US20040015645A1 (en) 2002-07-19 2002-07-19 System, apparatus, and method for a flexible DRAM architecture
PCT/US2003/021133 WO2004010435A2 (en) 2002-07-19 2003-07-03 A system, apparatus, and method for a flexible dram architecture

Publications (1)

Publication Number Publication Date
ATE432500T1 true ATE432500T1 (de) 2009-06-15

Family

ID=30443334

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03765490T ATE432500T1 (de) 2002-07-19 2003-07-03 System, verfahren und anordnung einer flexiblen dram architektur

Country Status (9)

Country Link
US (1) US20040015645A1 (de)
EP (1) EP1523712B1 (de)
KR (2) KR20080063531A (de)
CN (1) CN100359492C (de)
AT (1) ATE432500T1 (de)
AU (1) AU2003247890A1 (de)
DE (1) DE60327769D1 (de)
TW (1) TWI312932B (de)
WO (1) WO2004010435A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6888777B2 (en) * 2002-08-27 2005-05-03 Intel Corporation Address decode
US7159066B2 (en) * 2002-08-27 2007-01-02 Intel Corporation Precharge suggestion
US7120765B2 (en) * 2002-10-30 2006-10-10 Intel Corporation Memory transaction ordering
US7469316B2 (en) * 2003-02-10 2008-12-23 Intel Corporation Buffered writes and memory page control
US7076617B2 (en) * 2003-09-30 2006-07-11 Intel Corporation Adaptive page management
CN101216751B (zh) * 2008-01-21 2010-07-14 戴葵 基于分布存储结构的具有数据处理能力的动态随机存储器装置
CN101221532B (zh) * 2008-01-21 2010-06-09 戴葵 实现具有数据处理能力的动态随机存储器的接口方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4700330A (en) * 1985-10-30 1987-10-13 Digital Equipment Corporation Memory for a digital data processing system including circuit for controlling refresh operations during power-up and power-down conditions
US5390308A (en) * 1992-04-15 1995-02-14 Rambus, Inc. Method and apparatus for address mapping of dynamic random access memory
US5278801A (en) * 1992-08-31 1994-01-11 Hewlett-Packard Company Flexible addressing for drams
JP3304531B2 (ja) * 1993-08-24 2002-07-22 富士通株式会社 半導体記憶装置
US6347354B1 (en) * 1997-10-10 2002-02-12 Rambus Incorporated Apparatus and method for maximizing information transfers over limited interconnect resources
US6137735A (en) * 1998-10-30 2000-10-24 Mosaid Technologies Incorporated Column redundancy circuit with reduced signal path delay
JP2001060169A (ja) * 1999-08-24 2001-03-06 Hitachi Ltd キャッシュコントローラ及びコンピュータシステム

Also Published As

Publication number Publication date
EP1523712B1 (de) 2009-05-27
CN100359492C (zh) 2008-01-02
TW200411387A (en) 2004-07-01
DE60327769D1 (de) 2009-07-09
WO2004010435A3 (en) 2004-04-01
AU2003247890A8 (en) 2004-02-09
WO2004010435A2 (en) 2004-01-29
CN1669006A (zh) 2005-09-14
US20040015645A1 (en) 2004-01-22
EP1523712A2 (de) 2005-04-20
TWI312932B (en) 2009-08-01
KR20050025619A (ko) 2005-03-14
KR20080063531A (ko) 2008-07-04
AU2003247890A1 (en) 2004-02-09

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties