ATE434777T1 - Methode zur herstellung mehrschichtiger reflektierender extrem-ultraviolett-lithograaphie-masken-rohlin e - Google Patents

Methode zur herstellung mehrschichtiger reflektierender extrem-ultraviolett-lithograaphie-masken-rohlin e

Info

Publication number
ATE434777T1
ATE434777T1 AT04778644T AT04778644T ATE434777T1 AT E434777 T1 ATE434777 T1 AT E434777T1 AT 04778644 T AT04778644 T AT 04778644T AT 04778644 T AT04778644 T AT 04778644T AT E434777 T1 ATE434777 T1 AT E434777T1
Authority
AT
Austria
Prior art keywords
extreme ultraviolet
lithography mask
ultraviolet lithography
mask blank
producing multi
Prior art date
Application number
AT04778644T
Other languages
English (en)
Inventor
Pei-Yang Yan
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of ATE434777T1 publication Critical patent/ATE434777T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT04778644T 2003-07-31 2004-07-16 Methode zur herstellung mehrschichtiger reflektierender extrem-ultraviolett-lithograaphie-masken-rohlin e ATE434777T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/631,171 US6998202B2 (en) 2003-07-31 2003-07-31 Multilayer reflective extreme ultraviolet lithography mask blanks
PCT/US2004/023237 WO2005013003A2 (en) 2003-07-31 2004-07-16 Multilayer reflective extreme ultraviolet lithography mask blanks

Publications (1)

Publication Number Publication Date
ATE434777T1 true ATE434777T1 (de) 2009-07-15

Family

ID=34104031

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04778644T ATE434777T1 (de) 2003-07-31 2004-07-16 Methode zur herstellung mehrschichtiger reflektierender extrem-ultraviolett-lithograaphie-masken-rohlin e

Country Status (8)

Country Link
US (1) US6998202B2 (de)
EP (1) EP1660941B1 (de)
KR (1) KR100802014B1 (de)
CN (1) CN1580957B (de)
AT (1) ATE434777T1 (de)
DE (1) DE602004021705D1 (de)
TW (1) TWI287171B (de)
WO (1) WO2005013003A2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8722569B2 (en) * 2006-03-13 2014-05-13 E I Du Pont De Nemours And Company Peroxide decomposition catalyst particles
US8663866B2 (en) 2006-03-13 2014-03-04 E I Du Pont De Nemours And Company Stable proton exchange membranes and membrane electrode assemblies
TWI417647B (zh) * 2006-06-08 2013-12-01 旭硝子股份有限公司 Ｅｕｖ微影術用之反射性空白遮光罩及用於彼之具有功能性薄膜的基板
JP4910856B2 (ja) * 2006-06-08 2012-04-04 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板
JP5348866B2 (ja) * 2007-09-14 2013-11-20 Ｈｏｙａ株式会社 マスクの製造方法
CN102687071B (zh) * 2009-12-09 2013-12-11 旭硝子株式会社 带反射层的euv光刻用衬底、euv光刻用反射型掩模坯料、euv光刻用反射型掩模、和该带反射层的衬底的制造方法
US8679707B2 (en) * 2012-08-01 2014-03-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a lithography mask
US9341941B2 (en) 2013-08-01 2016-05-17 Samsung Electronics Co., Ltd. Reflective photomask blank, reflective photomask, and integrated circuit device manufactured by using reflective photomask
US9075316B2 (en) 2013-11-15 2015-07-07 Globalfoundries Inc. EUV mask for use during EUV photolithography processes
US20170017146A1 (en) * 2015-07-13 2017-01-19 Applied Materials, Inc. Process for removing contamination on ruthenium surface
US10468149B2 (en) 2017-02-03 2019-11-05 Globalfoundries Inc. Extreme ultraviolet mirrors and masks with improved reflectivity
KR102402767B1 (ko) 2017-12-21 2022-05-26 삼성전자주식회사 극자외선 마스크 블랭크, 극자외선 마스크 블랭크를 이용하여 제조된 포토마스크, 포토마스크를 이용한 리소그래피 장치 및 포토마스크를 이용한 반도체 장치 제조 방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI267704B (en) * 1999-07-02 2006-12-01 Asml Netherlands Bv Capping layer for EUV optical elements
US20030008148A1 (en) * 2001-07-03 2003-01-09 Sasa Bajt Optimized capping layers for EUV multilayers
US6641959B2 (en) * 2001-08-09 2003-11-04 Intel Corporation Absorberless phase-shifting mask for EUV
US6607862B2 (en) * 2001-08-24 2003-08-19 Intel Corporation Damascene extreme ultraviolet lithography alternative phase shift photomask and method of making
DE10156366B4 (de) * 2001-11-16 2007-01-11 Infineon Technologies Ag Reflexionsmaske und Verfahren zur Herstellung der Reflexionsmaske
JP4158960B2 (ja) 2002-02-25 2008-10-01 Ｈｏｙａ株式会社 露光用反射型マスクブランク及び露光用反射型マスク
US6756163B2 (en) * 2002-06-27 2004-06-29 Intel Corporation Re-usable extreme ultraviolet lithography multilayer mask blank
EP1394815B1 (de) 2002-08-28 2011-06-22 ASML Netherlands B.V. Lithographiegerät mit einem Mo/Si Mehrfachschichtenspiegel mit einer Schutzschicht
JP4825598B2 (ja) * 2006-06-23 2011-11-30 株式会社ミツトヨ 画像測定装置の校正方法

Also Published As

Publication number Publication date
DE602004021705D1 (de) 2009-08-06
CN1580957A (zh) 2005-02-16
TWI287171B (en) 2007-09-21
EP1660941A2 (de) 2006-05-31
US6998202B2 (en) 2006-02-14
KR100802014B1 (ko) 2008-02-12
WO2005013003A2 (en) 2005-02-10
TW200508789A (en) 2005-03-01
EP1660941B1 (de) 2009-06-24
CN1580957B (zh) 2010-05-26
US20050026046A1 (en) 2005-02-03
WO2005013003A3 (en) 2005-08-11
KR20060032211A (ko) 2006-04-14

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