ATE437978T1 - Verfahren zur abscheidung von siliciumnitridfilmen und/oder siliciumoxidnitridfilmen mittels cvd - Google Patents

Verfahren zur abscheidung von siliciumnitridfilmen und/oder siliciumoxidnitridfilmen mittels cvd

Info

Publication number
ATE437978T1
ATE437978T1 AT06725524T AT06725524T ATE437978T1 AT E437978 T1 ATE437978 T1 AT E437978T1 AT 06725524 T AT06725524 T AT 06725524T AT 06725524 T AT06725524 T AT 06725524T AT E437978 T1 ATE437978 T1 AT E437978T1
Authority
AT
Austria
Prior art keywords
nitride film
cvd
silicon
deposing
silicon oxide
Prior art date
Application number
AT06725524T
Other languages
English (en)
Inventor
Christian Dussarrat
Original Assignee
L Air Liquide Soc Anon A Direc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by L Air Liquide Soc Anon A Direc filed Critical L Air Liquide Soc Anon A Direc
Application granted granted Critical
Publication of ATE437978T1 publication Critical patent/ATE437978T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT06725524T 2006-04-03 2006-04-03 Verfahren zur abscheidung von siliciumnitridfilmen und/oder siliciumoxidnitridfilmen mittels cvd ATE437978T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2006/061284 WO2007112780A1 (en) 2006-04-03 2006-04-03 Method for depositing silicon nitride films and/or silicon oxynitride films by chemical vapor deposition

Publications (1)

Publication Number Publication Date
ATE437978T1 true ATE437978T1 (de) 2009-08-15

Family

ID=37571840

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06725524T ATE437978T1 (de) 2006-04-03 2006-04-03 Verfahren zur abscheidung von siliciumnitridfilmen und/oder siliciumoxidnitridfilmen mittels cvd

Country Status (8)

Country Link
US (1) US8377511B2 (de)
EP (1) EP2007917B1 (de)
JP (1) JP5149273B2 (de)
KR (1) KR101304726B1 (de)
CN (1) CN101466865A (de)
AT (1) ATE437978T1 (de)
DE (1) DE602006008190D1 (de)
WO (1) WO2007112780A1 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007112779A1 (en) * 2006-04-03 2007-10-11 L'air Liquide Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof
US8232176B2 (en) 2006-06-22 2012-07-31 Applied Materials, Inc. Dielectric deposition and etch back processes for bottom up gapfill
US7867923B2 (en) * 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US8357435B2 (en) 2008-05-09 2013-01-22 Applied Materials, Inc. Flowable dielectric equipment and processes
US8980382B2 (en) 2009-12-02 2015-03-17 Applied Materials, Inc. Oxygen-doping for non-carbon radical-component CVD films
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
US8449942B2 (en) 2009-11-12 2013-05-28 Applied Materials, Inc. Methods of curing non-carbon flowable CVD films
WO2011090626A2 (en) 2009-12-30 2011-07-28 Applied Materials, Inc. Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio
US8329262B2 (en) 2010-01-05 2012-12-11 Applied Materials, Inc. Dielectric film formation using inert gas excitation
US8647992B2 (en) 2010-01-06 2014-02-11 Applied Materials, Inc. Flowable dielectric using oxide liner
CN102714156A (zh) 2010-01-07 2012-10-03 应用材料公司 自由基成分cvd的原位臭氧固化
JP2013521650A (ja) 2010-03-05 2013-06-10 アプライド マテリアルズ インコーポレイテッド ラジカル成分ｃｖｄによる共形層
CN102471885A (zh) * 2010-04-01 2012-05-23 乔治洛德方法研究和开发液化空气有限公司 使用氨基金属与卤化金属前体组合的含金属氮化物的薄膜沉积
US8580699B2 (en) 2010-09-10 2013-11-12 Applied Materials, Inc. Embedded catalyst for atomic layer deposition of silicon oxide
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8450191B2 (en) 2011-01-24 2013-05-28 Applied Materials, Inc. Polysilicon films by HDP-CVD
US8716154B2 (en) 2011-03-04 2014-05-06 Applied Materials, Inc. Reduced pattern loading using silicon oxide multi-layers
US8445078B2 (en) 2011-04-20 2013-05-21 Applied Materials, Inc. Low temperature silicon oxide conversion
US8466073B2 (en) 2011-06-03 2013-06-18 Applied Materials, Inc. Capping layer for reduced outgassing
US9404178B2 (en) 2011-07-15 2016-08-02 Applied Materials, Inc. Surface treatment and deposition for reduced outgassing
US8617989B2 (en) 2011-09-26 2013-12-31 Applied Materials, Inc. Liner property improvement
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
US9337018B2 (en) 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
WO2015047914A1 (en) 2013-09-27 2015-04-02 Antonio Sanchez Amine substituted trisilylamine and tridisilylamine compounds
US20150303060A1 (en) 2014-04-16 2015-10-22 Samsung Electronics Co., Ltd. Silicon precursor, method of forming a layer using the same, and method of fabricating semiconductor device using the same
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US9472392B2 (en) 2015-01-30 2016-10-18 Applied Materials, Inc. Step coverage dielectric
US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9899210B2 (en) 2015-10-20 2018-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical vapor deposition apparatus and method for manufacturing semiconductor device using the same
US9633838B2 (en) 2015-12-28 2017-04-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition of silicon-containing films using penta-substituted disilanes
KR102241936B1 (ko) * 2016-03-17 2021-04-20 주식회사 원익아이피에스 실리콘산질화막의 증착방법
TWI753794B (zh) 2016-03-23 2022-01-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 形成含矽膜之組成物及其製法與用途
US10192734B2 (en) 2016-12-11 2019-01-29 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude Short inorganic trisilylamine-based polysilazanes for thin film deposition
TWI784022B (zh) * 2017-07-31 2022-11-21 中國大陸商南大光電半導體材料有限公司 1,1,1-參(二甲胺基)二矽烷及其製備方法
JP7113670B2 (ja) * 2018-06-08 2022-08-05 東京エレクトロン株式会社 Ａｌｄ成膜方法およびａｌｄ成膜装置
CN110983300B (zh) * 2019-12-04 2023-06-20 江苏菲沃泰纳米科技股份有限公司 镀膜设备及其应用
CN114634364B (zh) * 2022-03-08 2023-08-11 中国科学院过程工程研究所 一种纯相Si2N2O粉体的合成方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230029B2 (ja) * 1994-05-30 2001-11-19 富士通株式会社 Ｉｉｉ−ｖ族化合物半導体結晶成長方法
US5874368A (en) * 1997-10-02 1999-02-23 Air Products And Chemicals, Inc. Silicon nitride from bis(tertiarybutylamino)silane
JP4021653B2 (ja) 2001-11-30 2007-12-12 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード Ｃｖｄ法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
JP4116283B2 (ja) * 2001-11-30 2008-07-09 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ヘキサキス（モノヒドロカルビルアミノ）ジシランおよびその製造方法
US7081271B2 (en) 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US20060178019A1 (en) * 2002-08-18 2006-08-10 Aviza Technology, Inc. Low temperature deposition of silicon oxides and oxynitrides
US7531679B2 (en) * 2002-11-14 2009-05-12 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
US7446217B2 (en) 2002-11-14 2008-11-04 Advanced Technology Materials, Inc. Composition and method for low temperature deposition of silicon-containing films
US7972663B2 (en) 2002-12-20 2011-07-05 Applied Materials, Inc. Method and apparatus for forming a high quality low temperature silicon nitride layer
US7172792B2 (en) * 2002-12-20 2007-02-06 Applied Materials, Inc. Method for forming a high quality low temperature silicon nitride film
JP2006511087A (ja) * 2002-12-20 2006-03-30 アプライド　マテリアルズ　インコーポレイテッド 高品位低温窒化シリコン層を形成する方法および装置
JP4265409B2 (ja) 2003-02-13 2009-05-20 三菱マテリアル株式会社 Ｓｉ−Ｓｉ結合を有する有機Ｓｉ含有化合物を用いたＳｉ含有薄膜の形成方法
US20050227017A1 (en) 2003-10-31 2005-10-13 Yoshihide Senzaki Low temperature deposition of silicon nitride
JP2005213633A (ja) * 2004-02-02 2005-08-11 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
US20060286819A1 (en) * 2005-06-21 2006-12-21 Applied Materials, Inc. Method for silicon based dielectric deposition and clean with photoexcitation
WO2007112779A1 (en) * 2006-04-03 2007-10-11 L'air Liquide Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof

Also Published As

Publication number Publication date
DE602006008190D1 (de) 2009-09-10
CN101466865A (zh) 2009-06-24
EP2007917A1 (de) 2008-12-31
US8377511B2 (en) 2013-02-19
US20100221428A1 (en) 2010-09-02
EP2007917B1 (de) 2009-07-29
JP2009532582A (ja) 2009-09-10
KR101304726B1 (ko) 2013-09-05
WO2007112780A1 (en) 2007-10-11
KR20090009844A (ko) 2009-01-23
JP5149273B2 (ja) 2013-02-20

Similar Documents

Publication Publication Date Title
ATE437978T1 (de) Verfahren zur abscheidung von siliciumnitridfilmen und/oder siliciumoxidnitridfilmen mittels cvd
TW200717611A (en) Film formation method and apparatus for semiconductor process
TW200618073A (en) Film formation method and apparatus for semiconductor process
ATE458839T1 (de) Verfahren für leicht zu reinigende substrate und artikel daraus
WO2007149761A3 (en) Methods to improve the in-film defectivity of pecvd amorphous carbon films
TW200721307A (en) Method and apparatus for forming silicon-containing insulating film
TW200721306A (en) Method and apparatus for forming silicon oxynitride film
SG144072A1 (en) Cyclic chemical vapor deposition of metal-silicon containing films
WO2008024566A3 (en) Overall defect reduction for pecvd films
EP2058416A3 (de) Herstellung einer metallhaltigen Schicht über ALD- oder CVD-Prozesse
TW200625443A (en) Film formation apparatus and method for semiconductor process
EP4624625A3 (de) Funktionalisierte cyclosilazane als vorstufen für siliciumhaltige filme mit hoher wachstumsrate
ATE527693T1 (de) Feldeffekttransistor mit einer oxydschicht als kanalschicht und verfahren zu dessen herstellung
SG139702A1 (en) Organometallic compounds
TW200506090A (en) Methods for forming aluminum containing films utilizing amino aluminum precursors
EP3929326A3 (de) Zusammensetzungen und verfahren zur ablagerung von kohlenstoffdotierten siliciumhaltigen filmen
ATE452220T1 (de) Verfahren zur abscheidung anorganischer/organischer filme
JP2012531045A5 (de)
TW200610057A (en) Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films
PH12015500541A1 (en) Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition
SG152183A1 (en) High quality silicon oxide films by remote plasma cvd from disilane precursors
ATE530207T1 (de) Dichtungselemente, artikel damit und verfahren zur verminderung von haftreibung
WO2009149167A3 (en) Low temperature deposition of silicon-containing films
EP1967609A3 (de) Plasmaverstärkte zyklische chemische Dampfabscheidung siliciumhaltiger Schichten
TW200620534A (en) Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties