ATE438121T1 - Regelung einer kritischen abmessung (cd) - Google Patents

Regelung einer kritischen abmessung (cd)

Info

Publication number
ATE438121T1
ATE438121T1 AT03394100T AT03394100T ATE438121T1 AT E438121 T1 ATE438121 T1 AT E438121T1 AT 03394100 T AT03394100 T AT 03394100T AT 03394100 T AT03394100 T AT 03394100T AT E438121 T1 ATE438121 T1 AT E438121T1
Authority
AT
Austria
Prior art keywords
exposure dose
process system
critical dimension
control
normalized
Prior art date
Application number
AT03394100T
Other languages
English (en)
Inventor
Joseph Pellegrini
David Crow
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE438121T1 publication Critical patent/ATE438121T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Measurement Of Radiation (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
AT03394100T 2002-10-31 2003-10-31 Regelung einer kritischen abmessung (cd) ATE438121T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/284,757 US6700950B1 (en) 2002-10-31 2002-10-31 Methods and systems for controlling critical dimension (CD) error

Publications (1)

Publication Number Publication Date
ATE438121T1 true ATE438121T1 (de) 2009-08-15

Family

ID=31715434

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03394100T ATE438121T1 (de) 2002-10-31 2003-10-31 Regelung einer kritischen abmessung (cd)

Country Status (4)

Country Link
US (1) US6700950B1 (de)
EP (1) EP1416330B1 (de)
AT (1) ATE438121T1 (de)
DE (1) DE60328574D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6912435B2 (en) 2002-08-28 2005-06-28 Inficon Lt Inc. Methods and systems for controlling reticle-induced errors
DE10252606A1 (de) * 2002-11-12 2004-05-27 Infineon Technologies Ag Verfahren, Vorrichtung, computerlesbares Speichermedium und Computerprogramm-Element zur rechnergestützten Überwachung eines Prozessparameters eines Herstellungsprozesses eines physikalischen Objekts
JP3787123B2 (ja) * 2003-02-13 2006-06-21 株式会社東芝 検査方法、プロセッサ及び半導体装置の製造方法
US7957826B2 (en) * 2007-08-21 2011-06-07 International Business Machines Corporation Methods for normalizing error in photolithographic processes
US8872122B2 (en) 2013-01-10 2014-10-28 Asml Netherlands B.V. Method of timing laser beam pulses to regulate extreme ultraviolet light dosing
TWI618453B (zh) * 2013-01-10 2018-03-11 Ａｓｍｌ荷蘭公司 用以調整雷射光束脈衝時序以調節極端紫外光劑量之方法及系統
US8872123B2 (en) 2013-01-10 2014-10-28 Asml Netherlands B.V. Method of timing laser beam pulses to regulate extreme ultraviolet light dosing
US9841689B1 (en) 2014-08-22 2017-12-12 Kla-Tencor Corporation Approach for model calibration used for focus and dose measurement
NL2017857A (en) 2015-12-18 2017-06-26 Asml Netherlands Bv Process flagging and cluster detection without requiring reconstruction
CN115729046B (zh) * 2021-08-30 2025-06-13 长鑫存储技术有限公司 关键尺寸的控制方法与控制系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2155650B (en) * 1984-02-14 1988-11-16 Canon Kk Method and apparatus for exposure
US6749864B2 (en) * 1986-02-13 2004-06-15 Takeda Chemical Industries, Ltd. Stabilized pharmaceutical composition
US5674652A (en) * 1991-02-28 1997-10-07 University Of New Mexico Diffracted light from latent images in photoresist for exposure control
US6292255B1 (en) * 1997-03-31 2001-09-18 Svg Lithography Systems, Inc. Dose correction for along scan linewidth variation
US6526164B1 (en) * 1999-05-27 2003-02-25 International Business Machines Corporation Intelligent photomask disposition
TWI226972B (en) * 2000-06-01 2005-01-21 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
US6429930B1 (en) * 2000-09-06 2002-08-06 Accent Optical Technologies, Inc. Determination of center of focus by diffraction signature analysis

Also Published As

Publication number Publication date
US6700950B1 (en) 2004-03-02
EP1416330A3 (de) 2005-11-23
EP1416330B1 (de) 2009-07-29
EP1416330A2 (de) 2004-05-06
DE60328574D1 (de) 2009-09-10

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Legal Events

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