ATE440158T1 - Verfahren zur elektrochemischen strukturierung eines leiter- oder halbleitermaterials und vorrichtung dafür - Google Patents
Verfahren zur elektrochemischen strukturierung eines leiter- oder halbleitermaterials und vorrichtung dafürInfo
- Publication number
- ATE440158T1 ATE440158T1 AT07730927T AT07730927T ATE440158T1 AT E440158 T1 ATE440158 T1 AT E440158T1 AT 07730927 T AT07730927 T AT 07730927T AT 07730927 T AT07730927 T AT 07730927T AT E440158 T1 ATE440158 T1 AT E440158T1
- Authority
- AT
- Austria
- Prior art keywords
- sample
- structuring
- front face
- electrode
- semiconductor material
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00126—Static structures not provided for in groups B81C1/00031 - B81C1/00119
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/006—Nanostructures, e.g. using aluminium anodic oxidation templates [AAO]
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/005—Contacting devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/14—Etching locally
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
- H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/665—Porous materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/61—Electrolytic etching
- H10P50/613—Electrolytic etching of Group IV materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0114—Electrochemical etching, anodic oxidation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Analytical Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Weting (AREA)
- Hybrid Cells (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Photovoltaic Devices (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0601924A FR2898138B1 (fr) | 2006-03-03 | 2006-03-03 | Procede de structuration electrochimique d'un materiau conducteur ou semi-conducteur, et dispositif de mise en oeuvre. |
| PCT/FR2007/000211 WO2007099210A1 (fr) | 2006-03-03 | 2007-02-06 | Procede de structuration electrochimique d'un materiau conducteur ou semi-conducteur, et dispositif de mise en oeuvre |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE440158T1 true ATE440158T1 (de) | 2009-09-15 |
Family
ID=37057038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07730927T ATE440158T1 (de) | 2006-03-03 | 2007-02-06 | Verfahren zur elektrochemischen strukturierung eines leiter- oder halbleitermaterials und vorrichtung dafür |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8329017B2 (de) |
| EP (1) | EP1999302B1 (de) |
| AT (1) | ATE440158T1 (de) |
| DE (1) | DE602007002065D1 (de) |
| FR (1) | FR2898138B1 (de) |
| WO (1) | WO2007099210A1 (de) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011005743B3 (de) * | 2011-03-17 | 2012-07-26 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Abscheidung einer Metallschicht auf einem Halbleiterbauelement |
| US8652929B2 (en) * | 2011-12-23 | 2014-02-18 | Peking University | CMOS device for reducing charge sharing effect and fabrication method thereof |
| DE102013219886A1 (de) * | 2013-10-01 | 2015-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur kontinuierlichen Herstellung poröser Siliciumschichten |
| CN104724663A (zh) * | 2013-12-20 | 2015-06-24 | 中国科学院兰州化学物理研究所 | 一种硅基仿生微纳结构表面的制备方法 |
| US9777386B2 (en) * | 2015-03-19 | 2017-10-03 | Lam Research Corporation | Chemistry additives and process for cobalt film electrodeposition |
| CN105817723B (zh) * | 2016-05-31 | 2018-02-23 | 南京工业职业技术学院 | 一种双液膜电化学刻蚀制备纳米工具电极的方法及装置 |
| BE1025681B1 (fr) * | 2018-03-23 | 2019-05-28 | Universite Catholique De Louvain | Procédé de traitement d'un substrat et dispositif de circuit intégré |
| CN109292731A (zh) * | 2018-09-11 | 2019-02-01 | 西南交通大学 | 基于电化学摩擦诱导的微纳加工方法 |
| US12398478B2 (en) * | 2019-06-11 | 2025-08-26 | Uchicago Argonne, Llc | Method and system for preparation of a nanowire composite based on electroplating |
| US12002605B1 (en) | 2021-02-16 | 2024-06-04 | Uchicago Argonne, Llc | Fabrication methods for electronic devices integrating magnetic nanostructures |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6017437A (en) * | 1997-08-22 | 2000-01-25 | Cutek Research, Inc. | Process chamber and method for depositing and/or removing material on a substrate |
| AU2864499A (en) * | 1998-03-05 | 1999-09-20 | Etchtech Sweden Ab | Method of etching |
| US5976331A (en) * | 1998-04-30 | 1999-11-02 | Lucent Technologies Inc. | Electrodeposition apparatus for coating wafers |
| DE10003772A1 (de) * | 2000-01-28 | 2001-08-09 | Bosch Gmbh Robert | Vorrichtung zum Abdichten eines Raums |
| US6793793B2 (en) * | 2000-08-24 | 2004-09-21 | Hideo Yoshida | Electrochemical treating method such as electroplating and electrochemical reaction device therefor |
| US6750153B2 (en) * | 2000-10-24 | 2004-06-15 | Nanosciences Corporation | Process for producing macroscopic cavities beneath the surface of a silicon wafer |
| SE523309E (sv) * | 2001-06-15 | 2010-03-02 | Replisaurus Technologies Ab | Metod, elektrod och apparat för att skapa mikro- och nanostrukturer i ledande material genom mönstring med masterelektrod och elektrolyt |
| US7022212B2 (en) * | 2001-10-26 | 2006-04-04 | American Air Liquide, Inc. | Micro structured electrode and method for monitoring wafer electroplating baths |
| US20060249391A1 (en) * | 2003-04-09 | 2006-11-09 | Sungho Jin | High resolution electrolytic lithography, apparatus therefor and resulting products |
| WO2005033798A2 (en) * | 2003-10-03 | 2005-04-14 | University Of Washington | Electrochemical micromanufacturing system and method |
| GB0416600D0 (en) * | 2004-07-24 | 2004-08-25 | Univ Newcastle | A process for manufacturing micro- and nano-devices |
-
2006
- 2006-03-03 FR FR0601924A patent/FR2898138B1/fr not_active Expired - Fee Related
-
2007
- 2007-02-06 WO PCT/FR2007/000211 patent/WO2007099210A1/fr not_active Ceased
- 2007-02-06 EP EP07730927A patent/EP1999302B1/de not_active Not-in-force
- 2007-02-06 DE DE602007002065T patent/DE602007002065D1/de active Active
- 2007-02-06 US US12/281,595 patent/US8329017B2/en not_active Expired - Fee Related
- 2007-02-06 AT AT07730927T patent/ATE440158T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US20090255820A1 (en) | 2009-10-15 |
| FR2898138B1 (fr) | 2008-05-16 |
| US8329017B2 (en) | 2012-12-11 |
| DE602007002065D1 (de) | 2009-10-01 |
| WO2007099210A1 (fr) | 2007-09-07 |
| EP1999302B1 (de) | 2009-08-19 |
| EP1999302A1 (de) | 2008-12-10 |
| FR2898138A1 (fr) | 2007-09-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |