ATE441213T1 - Photoelektrischer dünnfilm-wandler - Google Patents

Photoelektrischer dünnfilm-wandler

Info

Publication number
ATE441213T1
ATE441213T1 AT04735406T AT04735406T ATE441213T1 AT E441213 T1 ATE441213 T1 AT E441213T1 AT 04735406 T AT04735406 T AT 04735406T AT 04735406 T AT04735406 T AT 04735406T AT E441213 T1 ATE441213 T1 AT E441213T1
Authority
AT
Austria
Prior art keywords
thin film
converter
photoelectric conversion
photoelectric converter
crystalline silicon
Prior art date
Application number
AT04735406T
Other languages
English (en)
Inventor
Takashi Suezaki
Masashi Yoshimi
Toshiaki Sasaki
Yuko Tawada
Kenji Yamamoto
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaneka Corp filed Critical Kaneka Corp
Application granted granted Critical
Publication of ATE441213T1 publication Critical patent/ATE441213T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Light Receiving Elements (AREA)
AT04735406T 2003-06-19 2004-05-28 Photoelektrischer dünnfilm-wandler ATE441213T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003174423 2003-06-19
PCT/JP2004/007803 WO2004114417A1 (ja) 2003-06-19 2004-05-28 薄膜光電変換装置

Publications (1)

Publication Number Publication Date
ATE441213T1 true ATE441213T1 (de) 2009-09-15

Family

ID=33534791

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04735406T ATE441213T1 (de) 2003-06-19 2004-05-28 Photoelektrischer dünnfilm-wandler

Country Status (10)

Country Link
US (1) US7678992B2 (de)
EP (1) EP1635402B1 (de)
JP (1) JP4558646B2 (de)
KR (1) KR101067354B1 (de)
CN (1) CN100485973C (de)
AT (1) ATE441213T1 (de)
AU (1) AU2004250460B2 (de)
DE (1) DE602004022807D1 (de)
ES (1) ES2329371T3 (de)
WO (1) WO2004114417A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7492028B2 (en) 2005-02-18 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method of the same, and a semiconductor device
JP4411337B2 (ja) * 2007-06-25 2010-02-10 シャープ株式会社 積層型光電変換装置
WO2009012345A2 (en) 2007-07-16 2009-01-22 Ascent Solar Technologies, Inc. Hybrid multi-junction photovoltaic cells and associated methods
JP5230627B2 (ja) * 2007-08-14 2013-07-10 三菱重工業株式会社 光電変換装置およびその製造方法
US8129613B2 (en) * 2008-02-05 2012-03-06 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having low base resistivity and method of making
US20110284061A1 (en) * 2008-03-21 2011-11-24 Fyzikalni Ustav Av Cr, V.V.I. Photovoltaic cell and methods for producing a photovoltaic cell
US20100032010A1 (en) * 2008-08-10 2010-02-11 Twin Creeks Technologies, Inc. Method to mitigate shunt formation in a photovoltaic cell comprising a thin lamina
US8338209B2 (en) * 2008-08-10 2012-12-25 Twin Creeks Technologies, Inc. Photovoltaic cell comprising a thin lamina having a rear junction and method of making
US20100031995A1 (en) * 2008-08-10 2010-02-11 Twin Creeks Technologies, Inc. Photovoltaic module comprising thin laminae configured to mitigate efficiency loss due to shunt formation
CN102047439B (zh) * 2008-10-30 2013-10-16 三菱重工业株式会社 光电转换装置和光电转换装置的制造方法
JP5470633B2 (ja) * 2008-12-11 2014-04-16 国立大学法人東北大学 光電変換素子及び太陽電池
WO2010088725A1 (en) * 2009-02-04 2010-08-12 Applied Hybrid Energy Pty Ltd A module for a solar array
KR101125322B1 (ko) * 2009-11-03 2012-03-27 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US8704083B2 (en) * 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
US8213470B2 (en) * 2010-11-24 2012-07-03 Photop Technologies, Inc. Intra-cavity frequency doubled microchip laser operating in TEM00 transverse mode

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62295466A (ja) * 1987-05-29 1987-12-22 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
JPH07254568A (ja) * 1994-01-28 1995-10-03 Toray Ind Inc アモルファスシリコン−ゲルマニウム膜およびその製造方法
JPH077168A (ja) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
EP1041646B1 (de) * 1997-11-10 2012-12-12 Kaneka Corporation Herstellungsverfahren eines photoelektrischen silizium-dünnschicht-wandlers
US6528397B1 (en) 1997-12-17 2003-03-04 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same
JP2002261015A (ja) * 1997-12-17 2002-09-13 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
JPH11330520A (ja) * 1998-03-09 1999-11-30 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置の製造方法とその方法に用いられるプラズマｃｖｄ装置
US6566159B2 (en) * 2000-10-04 2003-05-20 Kaneka Corporation Method of manufacturing tandem thin-film solar cell
JP4618694B2 (ja) * 2000-10-04 2011-01-26 株式会社カネカ タンデム型薄膜太陽電池の製造方法
US6632993B2 (en) * 2000-10-05 2003-10-14 Kaneka Corporation Photovoltaic module
JP4091310B2 (ja) * 2001-02-15 2008-05-28 株式会社カネカ シリコン薄膜太陽電池の製造方法
JP2002261025A (ja) * 2001-02-28 2002-09-13 Hitachi Kokusai Electric Inc 半導体製造装置
JP2003347572A (ja) 2002-01-28 2003-12-05 Kanegafuchi Chem Ind Co Ltd タンデム型薄膜光電変換装置とその製造方法

Also Published As

Publication number Publication date
DE602004022807D1 (de) 2009-10-08
EP1635402A1 (de) 2006-03-15
AU2004250460A1 (en) 2004-12-29
AU2004250460B2 (en) 2009-08-27
KR20060064703A (ko) 2006-06-13
WO2004114417A1 (ja) 2004-12-29
JPWO2004114417A1 (ja) 2006-08-03
US20060097259A1 (en) 2006-05-11
US7678992B2 (en) 2010-03-16
ES2329371T3 (es) 2009-11-25
EP1635402A4 (de) 2007-02-21
EP1635402B1 (de) 2009-08-26
KR101067354B1 (ko) 2011-09-23
CN100485973C (zh) 2009-05-06
CN1748322A (zh) 2006-03-15
JP4558646B2 (ja) 2010-10-06

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