ATE441942T1 - Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür - Google Patents

Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür

Info

Publication number
ATE441942T1
ATE441942T1 AT07755589T AT07755589T ATE441942T1 AT E441942 T1 ATE441942 T1 AT E441942T1 AT 07755589 T AT07755589 T AT 07755589T AT 07755589 T AT07755589 T AT 07755589T AT E441942 T1 ATE441942 T1 AT E441942T1
Authority
AT
Austria
Prior art keywords
indium
copper
based photovoltaic
diselenide
production method
Prior art date
Application number
AT07755589T
Other languages
English (en)
Inventor
Nicole R Anderson
Dimitris Elias Katsoulis
Herschel Henry Reese
Bizhong Zhu
Lawrence M Woods
Joseph H Armstrong
Rosine M Ribelin
Original Assignee
Dow Corning
Itn Energy Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning, Itn Energy Systems Inc filed Critical Dow Corning
Application granted granted Critical
Publication of ATE441942T1 publication Critical patent/ATE441942T1/de

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Polymers (AREA)
  • Photovoltaic Devices (AREA)
AT07755589T 2006-04-18 2007-04-18 Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür ATE441942T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US79287106P 2006-04-18 2006-04-18
US79285206P 2006-04-18 2006-04-18
PCT/US2007/009365 WO2007123901A1 (en) 2006-04-18 2007-04-18 Copper indium diselenide-based photovoltaic device and method of preparing the same

Publications (1)

Publication Number Publication Date
ATE441942T1 true ATE441942T1 (de) 2009-09-15

Family

ID=38434788

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07755589T ATE441942T1 (de) 2006-04-18 2007-04-18 Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür

Country Status (9)

Country Link
US (1) US20090084427A1 (de)
EP (1) EP2016625B1 (de)
JP (2) JP2009534841A (de)
KR (1) KR20090005184A (de)
CN (1) CN101473448B (de)
AT (1) ATE441942T1 (de)
DE (1) DE602007002297D1 (de)
ES (1) ES2328873T3 (de)
WO (1) WO2007123901A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE551398T1 (de) 2005-02-16 2012-04-15 Dow Corning Verstärkte silikonharzfolie und herstellungsverfahren dafür
US8092910B2 (en) 2005-02-16 2012-01-10 Dow Corning Toray Co., Ltd. Reinforced silicone resin film and method of preparing same
WO2007018756A1 (en) 2005-08-04 2007-02-15 Dow Corning Corporation Reinforced silicone resin film and method of preparing same
EP1969065B1 (de) 2005-12-21 2011-07-27 Dow Corning Corporation Silikonharzfilm, herstellungsverfahren dafür und nanomaterialgefüllte silikonzusammensetzung
KR100753959B1 (ko) * 2006-01-12 2007-08-31 에이펫(주) 기판 건조장치를 이용한 기판 건조방법
EP1973964B1 (de) 2006-01-19 2011-07-06 Dow Corning Corporation Silikonharzfilm, herstellungsverfahren dafür und mit nanomaterial gefüllte silikonzusammensetzung
US8084097B2 (en) 2006-02-20 2011-12-27 Dow Corning Corporation Silicone resin film, method of preparing same, and nanomaterial-filled silicone composition
US8207442B2 (en) 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
WO2007120905A2 (en) * 2006-04-18 2007-10-25 Dow Corning Corporation Cadmium telluride-based photovoltaic device and method of preparing the same
WO2008036769A2 (en) 2006-09-19 2008-03-27 Itn Energy Systems, Inc. Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices
US8323797B2 (en) 2007-02-22 2012-12-04 Dow Corning Corporation Composite article having excellent fire and impact resistance and method of making the same
JP5426402B2 (ja) 2007-02-22 2014-02-26 ダウ コーニング コーポレーション 強化シリコーン樹脂フィルム
US20090013292A1 (en) * 2007-07-03 2009-01-08 Mentor Graphics Corporation Context dependent timing analysis and prediction
US8242181B2 (en) 2007-10-12 2012-08-14 Dow Corning Corporation Aluminum oxide dispersion and method of preparing same
KR100933193B1 (ko) * 2007-12-18 2009-12-22 에스엔유 프리시젼 주식회사 박막 제조 장치 및 박막 제조 방법
WO2009111053A2 (en) * 2008-03-05 2009-09-11 Global Solar Energy, Inc. Buffer layer deposition for thin-film solar cells
JP5242499B2 (ja) * 2009-05-25 2013-07-24 シャープ株式会社 太陽電池モジュールおよびその製造方法、ならびに当該太陽電池モジュールを搭載した電子機器
WO2011017237A2 (en) * 2009-08-04 2011-02-10 Precursor Energetics, Inc. Polymeric precursors for caigs and aigs silver-containing photovoltaics
SG178229A1 (en) * 2009-08-04 2012-03-29 Precursor Energetics Inc Methods for photovoltaic absorbers with controlled stoichiometry
CN102471359A (zh) * 2009-08-04 2012-05-23 普瑞凯瑟安质提克斯公司 用于cis及cigs光伏装置的聚合前体
KR101114685B1 (ko) * 2010-02-08 2012-04-17 영남대학교 산학협력단 연속흐름반응법을 이용한 화합물 태양전지용 ＣｕＩｎＳ２ 박막의 제조방법
KR101121476B1 (ko) * 2010-02-08 2012-03-13 영남대학교 산학협력단 연속흐름반응법을 이용한 화합물 태양전지용 ＣｕＩｎＳｅ２ 박막의 제조방법
JP5454214B2 (ja) * 2010-02-22 2014-03-26 Ｔｄｋ株式会社 化合物半導体バッファ層の製造方法及び化合物半導体薄膜太陽電池の製造方法
JP2013539912A (ja) * 2010-09-15 2013-10-28 プリカーサー エナジェティクス， インコーポレイテッド 光起電のための堆積過程およびデバイス
FR2972299B1 (fr) * 2011-03-01 2016-11-25 Commissariat Energie Atomique Procédé pour la mise en série électrique monolithique de cellules photovoltaïques d'un module solaire et module photovoltaïque mettant en œuvre ce procédé
US9209322B2 (en) * 2011-08-10 2015-12-08 Ascent Solar Technologies, Inc. Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates
US9780242B2 (en) 2011-08-10 2017-10-03 Ascent Solar Technologies, Inc. Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates
CN103828063A (zh) * 2011-08-10 2014-05-28 阿森特太阳能技术公司 用于聚合物基底上柔性光电装置的多层薄膜后接触系统
DE102011089776B4 (de) * 2011-12-23 2015-04-09 Siemens Aktiengesellschaft Detektorelement, Strahlungsdetektor, medizinisches Gerät und Verfahren zum Erzeugen eines solchen Detektorelements
KR101315311B1 (ko) 2012-07-13 2013-10-04 한국에너지기술연구원 후면전극 및 이를 포함하는 ｃｉｓ계 태양전지
CN112309440B (zh) * 2020-10-21 2022-04-26 西北工业大学 基于铂-二维硒化铟-少层石墨肖特基二极管的光存储器件及存储方法

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL131800C (de) * 1965-05-17
DE2709094C2 (de) * 1977-03-02 1984-11-22 Boehringer Mannheim Gmbh, 6800 Mannheim Adsorbens für die affinitätsspezifische Trennung von Nukleinsäuren, Verfahren zu seiner Herstellung und seine Verwendung
US4260780A (en) * 1979-11-27 1981-04-07 The United States Of America As Represented By The Secretary Of The Air Force Phenylmethylpolysilane polymers and process for their preparation
US4276424A (en) * 1979-12-03 1981-06-30 Petrarch Systems Methods for the production of organic polysilanes
US4314956A (en) * 1980-07-23 1982-02-09 Dow Corning Corporation High yield silicon carbide pre-ceramic polymers
US4324901A (en) * 1981-04-29 1982-04-13 Wisconsin Alumni Research Foundation Soluble polysilastyrene and method for preparation
DE3280293D1 (de) * 1981-11-04 1991-02-21 Kanegafuchi Chemical Ind Biegsame photovoltaische einrichtung.
US4530879A (en) * 1983-03-04 1985-07-23 Minnesota Mining And Manufacturing Company Radiation activated addition reaction
US4510094A (en) * 1983-12-06 1985-04-09 Minnesota Mining And Manufacturing Company Platinum complex
US4542257A (en) * 1984-04-27 1985-09-17 Hughes Aircraft Company Solar cell array panel and method of manufacture
US4720856A (en) * 1986-09-02 1988-01-19 Motorola, Inc. Control circuit having a direct current control loop for controlling the gain of an attenuator
JPS62295468A (ja) * 1987-05-29 1987-12-22 Semiconductor Energy Lab Co Ltd 光電変換装置
US4766176A (en) * 1987-07-20 1988-08-23 Dow Corning Corporation Storage stable heat curable organosiloxane compositions containing microencapsulated platinum-containing catalysts
JPH0214244A (ja) * 1988-06-30 1990-01-18 Toray Dow Corning Silicone Co Ltd 加熱硬化性オルガノポリシロキサン組成物
DE4217432A1 (de) * 1992-05-26 1993-12-02 Inst Neue Mat Gemein Gmbh Verfahren zur Herstellung von Glas mit verbesserter Langzeitstandfähigkeit bei erhöhten Temperaturen
JP3169148B2 (ja) * 1992-09-30 2001-05-21 三井化学株式会社 防火ガラス
US5441897A (en) * 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
DE4423195A1 (de) * 1994-07-01 1996-01-04 Wacker Chemie Gmbh Triazenoxid-Übergangsmetall-Komplexe als Hydrosilylierungskatalysatoren
JP3825843B2 (ja) * 1996-09-12 2006-09-27 キヤノン株式会社 太陽電池モジュール
DE69728846T2 (de) * 1996-12-31 2005-04-21 Dow Corning Verfahren zur Herstellung von Gummi-modifizierte feste Silikon-Harze und daraus hergestellte Komposite
DE19731416C1 (de) * 1997-07-22 1998-09-17 Vetrotech Saint Gobain Int Ag Brandschutzverglasung
JPH11135820A (ja) * 1997-08-27 1999-05-21 Canon Inc 太陽電池モジュール及び太陽電池モジュール用補強部材
JPH11289103A (ja) * 1998-02-05 1999-10-19 Canon Inc 半導体装置および太陽電池モジュ―ル及びその解体方法
JP2000086364A (ja) * 1998-06-30 2000-03-28 Toshiba Corp 太陽電池用の複合材料基板、及び太陽電池
US6447922B1 (en) 2000-11-20 2002-09-10 General Electric Company Curable silicon adhesive compositions
US6846852B2 (en) * 2001-08-16 2005-01-25 Goldschmidt Ag Siloxane-containing compositions curable by radiation to silicone elastomers
US6537845B1 (en) * 2001-08-30 2003-03-25 Mccandless Brian E. Chemical surface deposition of ultra-thin semiconductors
US6660395B2 (en) * 2002-03-12 2003-12-09 Dow Corning Corporation Silicone resin based composites interleaved for improved toughness
JP4055053B2 (ja) 2002-03-26 2008-03-05 本田技研工業株式会社 化合物薄膜太陽電池およびその製造方法
CN100338120C (zh) * 2002-05-27 2007-09-19 日东电工株式会社 树脂片及使用该树脂片的液晶元件基板
JP3919001B2 (ja) 2002-08-08 2007-05-23 信越化学工業株式会社 付加反応硬化型オルガノポリシロキサン組成物
US7037592B2 (en) * 2003-02-25 2006-05-02 Dow Coming Corporation Hybrid composite of silicone and organic resins
US20070160936A1 (en) * 2003-06-23 2007-07-12 Gardner Geoffrey B Adhesion method using gray-scale photolithography
EP1654334A1 (de) * 2003-08-01 2006-05-10 Dow Corning Corporation Siliconbasierte dielektrische beschichtungen und filme für anwendungen auf dem gebiet der fotovoltaik
JP2005089671A (ja) 2003-09-19 2005-04-07 Shin Etsu Chem Co Ltd 硬化性シリコーン樹脂組成物
JP4503271B2 (ja) * 2003-11-28 2010-07-14 東レ・ダウコーニング株式会社 シリコーン積層体の製造方法
WO2005091379A2 (en) * 2004-03-16 2005-09-29 Vhf Technologies Sa Electric energy generating modules with a two-dimensional profile and method of fabricating the same
US8716592B2 (en) * 2004-07-12 2014-05-06 Quanex Ig Systems, Inc. Thin film photovoltaic assembly method
CA2586961A1 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Thermal process for creation of an in-situ junction layer in cigs
US7196262B2 (en) * 2005-06-20 2007-03-27 Solyndra, Inc. Bifacial elongated solar cell devices

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CN101473448A (zh) 2009-07-01
DE602007002297D1 (de) 2009-10-15
EP2016625A1 (de) 2009-01-21
EP2016625B1 (de) 2009-09-02
JP2009534841A (ja) 2009-09-24
WO2007123901A1 (en) 2007-11-01
JP2011171775A (ja) 2011-09-01
KR20090005184A (ko) 2009-01-12
ES2328873T3 (es) 2009-11-18
CN101473448B (zh) 2011-05-11

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