ATE442194T1 - Verfahren zur herstellung von halbleitergranulaten - Google Patents

Verfahren zur herstellung von halbleitergranulaten

Info

Publication number
ATE442194T1
ATE442194T1 AT04742839T AT04742839T ATE442194T1 AT E442194 T1 ATE442194 T1 AT E442194T1 AT 04742839 T AT04742839 T AT 04742839T AT 04742839 T AT04742839 T AT 04742839T AT E442194 T1 ATE442194 T1 AT E442194T1
Authority
AT
Austria
Prior art keywords
producing semiconductor
granules
semiconductor granules
semiconductor
supplying
Prior art date
Application number
AT04742839T
Other languages
English (en)
Inventor
Alain Straboni
Original Assignee
Centre Nat Rech Scient
Univ Poitiers
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient, Univ Poitiers filed Critical Centre Nat Rech Scient
Application granted granted Critical
Publication of ATE442194T1 publication Critical patent/ATE442194T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • B01J2/22—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic by pressing in moulds or between rollers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Glanulating (AREA)
  • Glass Compositions (AREA)
AT04742839T 2003-04-14 2004-04-09 Verfahren zur herstellung von halbleitergranulaten ATE442194T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0304675A FR2853562B1 (fr) 2003-04-14 2003-04-14 Procede de fabrication de granules semiconducteurs
PCT/FR2004/050152 WO2004091767A1 (fr) 2003-04-14 2004-04-09 Procede de fabrication de granules semiconducteurs

Publications (1)

Publication Number Publication Date
ATE442194T1 true ATE442194T1 (de) 2009-09-15

Family

ID=33041866

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04742839T ATE442194T1 (de) 2003-04-14 2004-04-09 Verfahren zur herstellung von halbleitergranulaten

Country Status (7)

Country Link
US (1) US7563404B2 (de)
EP (2) EP1617939B1 (de)
JP (1) JP2006526558A (de)
AT (1) ATE442194T1 (de)
DE (1) DE602004023071D1 (de)
FR (1) FR2853562B1 (de)
WO (1) WO2004091767A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9493358B2 (en) * 2003-04-14 2016-11-15 Stile Photovoltaic module including integrated photovoltaic cells
US8105923B2 (en) * 2003-04-14 2012-01-31 Centre National De La Recherche Scientifique Sintered semiconductor material
US9741881B2 (en) 2003-04-14 2017-08-22 S'tile Photovoltaic module including integrated photovoltaic cells
US8405183B2 (en) * 2003-04-14 2013-03-26 S'Tile Pole des Eco-Industries Semiconductor structure
US8192648B2 (en) * 2003-04-14 2012-06-05 S'tile Method for forming a sintered semiconductor material
FR2934186B1 (fr) * 2008-07-28 2013-04-05 Tile S Fabrication et purification d'un solide semiconducteur
FR2944142B1 (fr) * 2009-04-02 2011-06-03 Tile S Structure electronique a couche epitaxiee sur silicium fritte
GB201117279D0 (en) * 2011-10-06 2011-11-16 Nexeon Ltd Etched silicon structures, method of forming etched silicon structures and uses thereof
KR101297415B1 (ko) * 2012-09-28 2013-08-19 (주) 뉴웰 프레스 장치를 이용한 펠렛 형태의 촉매 또는 세라믹 성형 방법
CN105537186A (zh) * 2016-02-26 2016-05-04 天津英利新能源有限公司 一种石墨舟自动清洗装置及方法
CN109176823B (zh) * 2018-09-26 2020-08-25 安徽畅九衢环保科技有限公司 一种生物陶粒滤料颗粒制造设备及滤料颗粒制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1118469B (de) * 1959-06-23 1961-11-30 Siemens Ag Verfahren zur Herstellung von gesinterten Halbleiterkoerpern
FR1568042A (de) * 1968-01-18 1969-05-23
DE2258305B2 (de) * 1972-11-29 1979-06-07 Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe Verfahren zum Vermeiden von beim Drucksintern oder Reaktionsdrucksintern von Hartstoffpulvern in Graphitmatrizen auftretenden Verklebungen
FR2479276A1 (fr) * 1980-03-31 1981-10-02 Radiotechnique Compelec Procede de croissance monocristalline d'un lingot d'un materiau semiconducteur, notamment de silicium, et appareillage de mise en oeuvre dudit procede
DE3518829A1 (de) * 1985-05-24 1986-11-27 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von formkoerpern aus siliciumgranulat fuer die erzeugung von siliciumschmelzen
FR2592064B1 (fr) * 1985-12-23 1988-02-12 Elf Aquitaine Dispositif pour former un bain d'un materiau semi-conducteur fondu afin d'y faire croitre un element cristallin
US4849033A (en) * 1988-04-21 1989-07-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Annealing Group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency
JP3342898B2 (ja) * 1991-11-26 2002-11-11 株式会社東芝 硅素焼結体およびこれを用いて形成したウェハ保持用ボード、スパッタリングターゲットおよびシリコンウェハ
US5431127A (en) * 1994-10-14 1995-07-11 Texas Instruments Incorporated Process for producing semiconductor spheres
JPH09165212A (ja) * 1995-12-15 1997-06-24 Kawasaki Steel Corp 太陽電池用シリコン原料粉および太陽電池用シリコンインゴットの製造方法
JP3571507B2 (ja) * 1997-09-18 2004-09-29 住友チタニウム株式会社 多結晶シリコンインゴットの製造方法
DE19859288A1 (de) * 1998-12-22 2000-06-29 Bayer Ag Agglomeration von Siliciumpulvern
JP2000236118A (ja) * 1999-02-12 2000-08-29 Aisin Seiki Co Ltd 熱電半導体の製造方法
FR2793351A1 (fr) * 1999-05-07 2000-11-10 Commissariat Energie Atomique Procede de fabrication d'un materiau a base de tellurure de cadmium pour la detection d'un rayonnement x ou gamma et detecteur comprenant ce materiau
FR2814757B1 (fr) * 2000-10-02 2003-07-11 Invensil Elaboration d'alliages de type aluminium-silicium
US8105923B2 (en) * 2003-04-14 2012-01-31 Centre National De La Recherche Scientifique Sintered semiconductor material

Also Published As

Publication number Publication date
US7563404B2 (en) 2009-07-21
FR2853562B1 (fr) 2006-08-11
DE602004023071D1 (de) 2009-10-22
US20070023979A1 (en) 2007-02-01
EP1617939B1 (de) 2009-09-09
WO2004091767A1 (fr) 2004-10-28
EP1617939A1 (de) 2006-01-25
JP2006526558A (ja) 2006-11-24
FR2853562A1 (fr) 2004-10-15
EP2100660A1 (de) 2009-09-16

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