ATE447760T1 - Speicher mit wahlfreiem zugriff mit programmierbarem leiter und dazugehöriges programmierverfahren - Google Patents
Speicher mit wahlfreiem zugriff mit programmierbarem leiter und dazugehöriges programmierverfahrenInfo
- Publication number
- ATE447760T1 ATE447760T1 AT02799242T AT02799242T ATE447760T1 AT E447760 T1 ATE447760 T1 AT E447760T1 AT 02799242 T AT02799242 T AT 02799242T AT 02799242 T AT02799242 T AT 02799242T AT E447760 T1 ATE447760 T1 AT E447760T1
- Authority
- AT
- Austria
- Prior art keywords
- random access
- access memory
- programming method
- associated programming
- programmable wire
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0026—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Programmable Controllers (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/022,722 US6873538B2 (en) | 2001-12-20 | 2001-12-20 | Programmable conductor random access memory and a method for writing thereto |
| PCT/US2002/040078 WO2003054887A1 (en) | 2001-12-20 | 2002-12-16 | A programmable conductor random access memory and a method for writing thereto |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE447760T1 true ATE447760T1 (de) | 2009-11-15 |
Family
ID=21811095
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09010432T ATE551699T1 (de) | 2001-12-20 | 2002-12-16 | Ram-speicher mit programmierbaren leiterelementen und verfahren zur programmierung |
| AT02799242T ATE447760T1 (de) | 2001-12-20 | 2002-12-16 | Speicher mit wahlfreiem zugriff mit programmierbarem leiter und dazugehöriges programmierverfahren |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT09010432T ATE551699T1 (de) | 2001-12-20 | 2002-12-16 | Ram-speicher mit programmierbaren leiterelementen und verfahren zur programmierung |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6873538B2 (de) |
| EP (2) | EP2112664B1 (de) |
| JP (1) | JP4081011B2 (de) |
| KR (1) | KR100626505B1 (de) |
| CN (2) | CN100538878C (de) |
| AT (2) | ATE551699T1 (de) |
| AU (1) | AU2002364167A1 (de) |
| DE (1) | DE60234273D1 (de) |
| TW (1) | TWI223278B (de) |
| WO (1) | WO2003054887A1 (de) |
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2001
- 2001-12-20 US US10/022,722 patent/US6873538B2/en not_active Expired - Lifetime
-
2002
- 2002-12-16 CN CNB028281470A patent/CN100538878C/zh not_active Expired - Fee Related
- 2002-12-16 CN CN2009101655847A patent/CN101615426B/zh not_active Expired - Fee Related
- 2002-12-16 AU AU2002364167A patent/AU2002364167A1/en not_active Abandoned
- 2002-12-16 AT AT09010432T patent/ATE551699T1/de active
- 2002-12-16 AT AT02799242T patent/ATE447760T1/de not_active IP Right Cessation
- 2002-12-16 DE DE60234273T patent/DE60234273D1/de not_active Expired - Fee Related
- 2002-12-16 KR KR1020047009746A patent/KR100626505B1/ko not_active Expired - Fee Related
- 2002-12-16 EP EP09010432A patent/EP2112664B1/de not_active Expired - Lifetime
- 2002-12-16 WO PCT/US2002/040078 patent/WO2003054887A1/en not_active Ceased
- 2002-12-16 JP JP2003555520A patent/JP4081011B2/ja not_active Expired - Fee Related
- 2002-12-16 EP EP02799242A patent/EP1456851B1/de not_active Expired - Lifetime
- 2002-12-20 TW TW091136822A patent/TWI223278B/zh not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| JP2005514719A (ja) | 2005-05-19 |
| TWI223278B (en) | 2004-11-01 |
| KR20040075022A (ko) | 2004-08-26 |
| US6873538B2 (en) | 2005-03-29 |
| WO2003054887A1 (en) | 2003-07-03 |
| TW200304150A (en) | 2003-09-16 |
| EP2112664B1 (de) | 2012-03-28 |
| DE60234273D1 (de) | 2009-12-17 |
| AU2002364167A1 (en) | 2003-07-09 |
| EP1456851A1 (de) | 2004-09-15 |
| CN100538878C (zh) | 2009-09-09 |
| CN101615426B (zh) | 2012-06-13 |
| JP4081011B2 (ja) | 2008-04-23 |
| US20030117831A1 (en) | 2003-06-26 |
| KR100626505B1 (ko) | 2006-09-20 |
| EP1456851B1 (de) | 2009-11-04 |
| EP2112664A1 (de) | 2009-10-28 |
| CN101615426A (zh) | 2009-12-30 |
| CN1620699A (zh) | 2005-05-25 |
| ATE551699T1 (de) | 2012-04-15 |
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