ATE448572T1 - Halbleiter-heterostruktur - Google Patents

Halbleiter-heterostruktur

Info

Publication number
ATE448572T1
ATE448572T1 AT07075739T AT07075739T ATE448572T1 AT E448572 T1 ATE448572 T1 AT E448572T1 AT 07075739 T AT07075739 T AT 07075739T AT 07075739 T AT07075739 T AT 07075739T AT E448572 T1 ATE448572 T1 AT E448572T1
Authority
AT
Austria
Prior art keywords
layer
emitter layer
emitter
electrons
holes
Prior art date
Application number
AT07075739T
Other languages
English (en)
Inventor
Maxim Odnoblyudov
Vladislav Bougrov
Original Assignee
Optogan Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optogan Oy filed Critical Optogan Oy
Application granted granted Critical
Publication of ATE448572T1 publication Critical patent/ATE448572T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Landscapes

  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
  • Semiconductor Lasers (AREA)
AT07075739T 2004-09-17 2005-09-19 Halbleiter-heterostruktur ATE448572T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI20041213A FI20041213A0 (fi) 2004-09-17 2004-09-17 Puolijohdeheterorakenne

Publications (1)

Publication Number Publication Date
ATE448572T1 true ATE448572T1 (de) 2009-11-15

Family

ID=33041546

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07075739T ATE448572T1 (de) 2004-09-17 2005-09-19 Halbleiter-heterostruktur

Country Status (11)

Country Link
US (1) US8053755B2 (de)
EP (2) EP1794815B1 (de)
JP (1) JP4961346B2 (de)
KR (1) KR101225675B1 (de)
CN (1) CN100470858C (de)
AT (1) ATE448572T1 (de)
DE (1) DE602005017676D1 (de)
FI (2) FI20041213A0 (de)
RU (2) RU2376680C2 (de)
TW (1) TWI429153B (de)
WO (1) WO2006030064A1 (de)

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US8421058B2 (en) 2008-11-21 2013-04-16 Agency For Science, Technology And Research Light emitting diode structure having superlattice with reduced electron kinetic energy therein
FR2959657B1 (fr) * 2010-05-06 2012-06-22 Commissariat Energie Atomique Transducteur de variation temporelle de température, puce électronique incorporant ce transducteur et procédé de fabrication de cette puce
US8907322B2 (en) * 2010-06-18 2014-12-09 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
US9806226B2 (en) 2010-06-18 2017-10-31 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
US8927959B2 (en) 2010-06-18 2015-01-06 Sensor Electronic Technology, Inc. Deep ultraviolet light emitting diode
CN103119722A (zh) * 2010-09-21 2013-05-22 量子电镀光学系统有限公司 发光及激光半导体的方法及装置
KR101836122B1 (ko) * 2011-08-24 2018-04-19 엘지이노텍 주식회사 발광소자
US8754397B2 (en) * 2011-12-07 2014-06-17 Nano-Electronic And Photonic Devices And Circuits, Llc CNT-based electronic and photonic devices
FR3009894B1 (fr) * 2013-08-22 2016-12-30 Commissariat Energie Atomique Diode electroluminescente dont une zone active comporte des couches d'inn
RU2558264C1 (ru) * 2014-03-26 2015-07-27 Общество с ограниченной ответственностью "Солар Дотс" Полупроводниковая структура для фотопреобразующего и светоизлучающего устройств
CN107578768B (zh) * 2017-08-31 2020-06-16 广东科学技术职业学院 基于声子晶体异质结的声波二极管
CN111512414B (zh) 2017-12-05 2023-08-18 阿卜杜拉国王科技大学 形成iii族氮化物合金
CN112490336A (zh) * 2020-12-15 2021-03-12 天津赛米卡尔科技有限公司 一种具有电子注入层的深紫外发光二极管外延结构及其制备方法
CN121307639A (zh) * 2025-12-11 2026-01-09 苏州镓锐芯光科技有限公司 半导体激光器及其制备方法

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JP2539268B2 (ja) * 1989-07-12 1996-10-02 富士通株式会社 半導体装置
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Also Published As

Publication number Publication date
FI20041213A0 (fi) 2004-09-17
DE602005017676D1 (de) 2009-12-24
EP1794815B1 (de) 2012-05-30
TWI429153B (zh) 2014-03-01
US20080283818A1 (en) 2008-11-20
TW200618430A (en) 2006-06-01
RU2007132477A (ru) 2009-03-10
JP4961346B2 (ja) 2012-06-27
CN101057343A (zh) 2007-10-17
EP1794815A1 (de) 2007-06-13
EP1903619B1 (de) 2009-11-11
FI20045387L (fi) 2006-03-18
EP1794815A4 (de) 2011-06-08
RU2376680C2 (ru) 2009-12-20
CN100470858C (zh) 2009-03-18
RU2431218C2 (ru) 2011-10-10
KR101225675B1 (ko) 2013-01-23
KR20070062556A (ko) 2007-06-15
FI20045387A0 (fi) 2004-10-13
HK1110147A1 (zh) 2008-07-04
WO2006030064A1 (en) 2006-03-23
EP1903619A1 (de) 2008-03-26
RU2007112506A (ru) 2008-10-27
US8053755B2 (en) 2011-11-08
JP2008513987A (ja) 2008-05-01
FI117529B (fi) 2006-11-15

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