ATE449144T1 - Siliziumbeschichtung mit niedriger dielektrizitätskonstante, herstellungsverfahren dafür und deren anwendung für integrierte schaltungen - Google Patents

Siliziumbeschichtung mit niedriger dielektrizitätskonstante, herstellungsverfahren dafür und deren anwendung für integrierte schaltungen

Info

Publication number
ATE449144T1
ATE449144T1 AT06792850T AT06792850T ATE449144T1 AT E449144 T1 ATE449144 T1 AT E449144T1 AT 06792850 T AT06792850 T AT 06792850T AT 06792850 T AT06792850 T AT 06792850T AT E449144 T1 ATE449144 T1 AT E449144T1
Authority
AT
Austria
Prior art keywords
silicone
low
application
production process
integrated circuits
Prior art date
Application number
AT06792850T
Other languages
English (en)
Inventor
Yves Giraud
Caroll Vergelatti
Didier Tupinier
Ludovic Odoni
Charlotte Basire
Lise Trouillet
Original Assignee
Bluestar Silicones France
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bluestar Silicones France filed Critical Bluestar Silicones France
Application granted granted Critical
Publication of ATE449144T1 publication Critical patent/ATE449144T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/665—Porous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Polymers (AREA)
AT06792850T 2005-08-19 2006-08-16 Siliziumbeschichtung mit niedriger dielektrizitätskonstante, herstellungsverfahren dafür und deren anwendung für integrierte schaltungen ATE449144T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0508637A FR2889850B1 (fr) 2005-08-19 2005-08-19 Revetement silicone de faible constante dielectrique, procede de preparation et application aux circuits integres
PCT/EP2006/065370 WO2007020273A1 (fr) 2005-08-19 2006-08-16 Revetement silicone de faible constante dielectrique, procede de preparation et application aux circuits integres

Publications (1)

Publication Number Publication Date
ATE449144T1 true ATE449144T1 (de) 2009-12-15

Family

ID=36293770

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06792850T ATE449144T1 (de) 2005-08-19 2006-08-16 Siliziumbeschichtung mit niedriger dielektrizitätskonstante, herstellungsverfahren dafür und deren anwendung für integrierte schaltungen

Country Status (9)

Country Link
US (1) US8080286B2 (de)
EP (1) EP1915435B1 (de)
JP (1) JP5219813B2 (de)
KR (1) KR101270189B1 (de)
CN (1) CN101283066B (de)
AT (1) ATE449144T1 (de)
DE (1) DE602006010568D1 (de)
FR (1) FR2889850B1 (de)
WO (1) WO2007020273A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3251351B2 (ja) 1992-09-30 2002-01-28 株式会社神戸製鋼所 肉盛溶接方法
EP2513913A1 (de) * 2009-12-14 2012-10-24 3M Innovative Properties Company Dielektrisches material mit nichtlinearer dielektrischer konstante
WO2015111229A1 (ja) * 2014-01-24 2015-07-30 住友化学株式会社 シリコーン樹脂液状組成物
EP3577660A4 (de) 2017-01-31 2020-07-22 3M Innovative Properties Company Mehrschichtiger spannungsregler und trockenabschluss für mittel- und hochspannungskabelanwendungen
EP3701549A1 (de) * 2017-10-26 2020-09-02 Syed Taymur Ahmad Zusammensetzung mit nicht-newtonschen fluiden für hydrophobe, oleophobe und oleophile beschichtungen und verfahren zur verwendung davon
CN121645664A (zh) * 2024-04-10 2026-03-10 华为技术有限公司 一种成膜组合物及其应用

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4255316A (en) * 1979-04-26 1981-03-10 Dow Corning Corporation Ceramifiable silicone adhesives
JP2531906B2 (ja) * 1991-09-13 1996-09-04 インターナショナル・ビジネス・マシーンズ・コーポレイション 発泡重合体
JP3435325B2 (ja) * 1997-02-13 2003-08-11 株式会社東芝 低誘電率珪素酸化膜の形成方法
EP0881668A3 (de) * 1997-05-28 2000-11-15 Dow Corning Toray Silicone Company, Ltd. Abscheidung eines elektrisch isolierenden Dünnfilms mit einer niedrigen Dielektrizitätskonstante
JP2000119595A (ja) * 1998-10-14 2000-04-25 Shin Etsu Chem Co Ltd 焼成皮膜形成用オルガノポリシロキサン組成物
KR100683428B1 (ko) * 1999-10-25 2007-02-20 다우 코닝 코포레이션 용액 용해도와 안정성이 우수한 실리콘 수지 조성물
US6313045B1 (en) * 1999-12-13 2001-11-06 Dow Corning Corporation Nanoporous silicone resins having low dielectric constants and method for preparation
US6107357A (en) * 1999-11-16 2000-08-22 International Business Machines Corporatrion Dielectric compositions and method for their manufacture
JP2001214127A (ja) * 2000-01-31 2001-08-07 Dow Corning Toray Silicone Co Ltd 電気絶縁性薄膜形成性樹脂組成物、および電気絶縁性薄膜の形成方法
US6271273B1 (en) * 2000-07-14 2001-08-07 Shipley Company, L.L.C. Porous materials
US6852648B2 (en) * 2000-09-27 2005-02-08 Agere Systems Inc. Semiconductor device having a low dielectric constant dielectric material and process for its manufacture
JP4545973B2 (ja) * 2001-03-23 2010-09-15 富士通株式会社 シリコン系組成物、低誘電率膜、半導体装置および低誘電率膜の製造方法
JP2003124207A (ja) * 2001-10-12 2003-04-25 Hitachi Chem Co Ltd 被膜、被膜形成用塗布液、被膜の製造方法及びその被膜を有する電子部品

Also Published As

Publication number Publication date
FR2889850B1 (fr) 2007-11-02
US8080286B2 (en) 2011-12-20
EP1915435B1 (de) 2009-11-18
JP5219813B2 (ja) 2013-06-26
KR20080067613A (ko) 2008-07-21
EP1915435A1 (de) 2008-04-30
FR2889850A1 (fr) 2007-02-23
DE602006010568D1 (de) 2009-12-31
JP2009505811A (ja) 2009-02-12
CN101283066A (zh) 2008-10-08
KR101270189B1 (ko) 2013-06-04
WO2007020273A1 (fr) 2007-02-22
US20090309195A1 (en) 2009-12-17
CN101283066B (zh) 2012-07-04

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